Ga/sub 0. 47/In/sub 0. 53/As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1. 53. mu. m
Journal Article
·
· Appl. Phys. Lett.; (United States)
Current injection Ga/sub 0.47/In/sub 0.53/As/InP multiquantum well heterostructure lasers operating at 1.53 ..mu..m have been successfully prepared by molecular beam epitaxy. These lasers consist of four approx.70 A Ga/sub 0.47/In/sub 0.53/As wells and three approx.150 A InP barriers. The threshold current density is 2.7 kA/cm/sup 2/. In the temperature range of 10--75 /sup 0/C, the threshold-temperature dependence can be described closely by a single temperature dependence coefficient T/sub 0/. The measured T/sub 0/ is 45 K. No significant improvement in T/sub 0/ is observed in these multiquantum well lasers over conventional double-heterostructure lasers operating also at 1.5 ..mu..m.
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 5247084
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:3; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Chemical beam epitaxial growth of very low threshold Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure and multiquantum well lasers
Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy
Room-temperature operation of lattice-matched InP/Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure lasers grown by MBE
Journal Article
·
Mon Oct 20 00:00:00 EDT 1986
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5158492
Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy
Journal Article
·
Mon Jun 01 00:00:00 EDT 1987
· IEEE J. Quant. Electron.; (United States)
·
OSTI ID:6361918
Room-temperature operation of lattice-matched InP/Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure lasers grown by MBE
Journal Article
·
Sat Jul 01 00:00:00 EDT 1978
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6803725
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
JUNCTIONS
LASERS
LAYERS
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
NEAR INFRARED RADIATION
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POTENTIALS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STIMULATED EMISSION
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY
TUNING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
JUNCTIONS
LASERS
LAYERS
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
NEAR INFRARED RADIATION
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POTENTIALS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STIMULATED EMISSION
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY
TUNING