Room-temperature operation of lattice-matched InP/Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure lasers grown by MBE
Journal Article
·
· Appl. Phys. Lett.; (United States)
Molecular beam epitaxial (MBE) growth of InP/Ga/sub 0.47/In/sub 0.53/As/InP double heterostructures has resulted in pulsed room-temperature lasing at 1.65 ..mu..m. Thresholds as low as 3.2 kA/cm/sup 2/ for a 0.6-..mu..m-thick layer has been achieved. These results were achieved by ''premixing'' the Ga and In together in a common source oven and precisely monitoring the Ga/In flux ratio during the growth of the Ga/sub 0.47/In/sub 0.53/As layer. Cd diffusion from a vapor source allowed us to p dope the top InP layer in the as-grown MBE wafer.
- Research Organization:
- Bell Telephone Laboratories, Holmdel, New Jersey 07733
- OSTI ID:
- 6803725
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:1; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Al/sub 0. 48/In/sub 0. 52/ As/Ga/sub 0. 47/In/sub 0. 53/ As/Al/sub 0. 48/In/sub 0. 52/As double-heterostructure lasers grown by molecular-beam epitaxy with lasing wavelength at 1. 65. mu. m
Ga/sub 0. 47/In/sub 0. 53/As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1. 53. mu. m
Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy
Journal Article
·
Mon Jun 01 00:00:00 EDT 1981
· J. Appl. Phys.; (United States)
·
OSTI ID:6265847
Ga/sub 0. 47/In/sub 0. 53/As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1. 53. mu. m
Journal Article
·
Tue Jan 31 23:00:00 EST 1984
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5247084
Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy
Journal Article
·
Mon Jun 01 00:00:00 EDT 1987
· IEEE J. Quant. Electron.; (United States)
·
OSTI ID:6361918
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DIFFUSION
EFFICIENCY
ENERGY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTION DIODES
LASERS
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
THRESHOLD ENERGY
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DIFFUSION
EFFICIENCY
ENERGY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTION DIODES
LASERS
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
THRESHOLD ENERGY