Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy
Journal Article
·
· IEEE J. Quant. Electron.; (United States)
The authors reported the successful preparation by chemical beam epitaxy (CBE) and performance characteristics of Ga/sub 0.47/In/sub 0.53/As/InP DH and MQW lasers emitting at 1.47-1.72 ..mu..m. The very low threshold current densities of 1.3 and 1.5 kA/cm/sup 2/ obtained for DH and MQW laser wafers, respectively, suggest that the present materials and heterointerfaces are of high quality. In fact these J/sub th/'s are the lowest obtained thus far for such lasers. Such results are consistent with the extremely high-quality Ga/sub 0.47/In/sub 0.53/As epilayers and Ga/sub 0.47/In/sub 0.53/As/InP quantum well structures also obtained grown by this technique. Differential quantum efficiency of -- 18 percent per facet was obtained for both DH and MQW lasers. Further, we were also able to show that there was a definite improvement in T/sub o/ from --35-45 K for DH laser wafers to -- 65-80 K for MQW laser wafers in contrast to previous experimental results.
- Research Organization:
- AT and T Bell Labs., Holmdel, NJ 07733
- OSTI ID:
- 6361918
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:6; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Chemical beam epitaxial growth of very low threshold Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure and multiquantum well lasers
Ga/sub 0. 47/In/sub 0. 53/As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1. 53. mu. m
Room-temperature operation of lattice-matched InP/Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure lasers grown by MBE
Journal Article
·
Mon Oct 20 00:00:00 EDT 1986
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5158492
Ga/sub 0. 47/In/sub 0. 53/As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1. 53. mu. m
Journal Article
·
Tue Jan 31 23:00:00 EST 1984
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5247084
Room-temperature operation of lattice-matched InP/Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure lasers grown by MBE
Journal Article
·
Sat Jul 01 00:00:00 EDT 1978
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6803725
Related Subjects
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
CURRENT DENSITY
CURRENTS
DATA ANALYSIS
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER RADIATION
LASERS
LAYERS
LOW TEMPERATURE
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
WAVELENGTHS
360601 -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
CURRENT DENSITY
CURRENTS
DATA ANALYSIS
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER RADIATION
LASERS
LAYERS
LOW TEMPERATURE
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
WAVELENGTHS