Chemical beam epitaxial growth of very low threshold Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure and multiquantum well lasers
Journal Article
·
· Appl. Phys. Lett.; (United States)
We report the successful preparation by chemical beam epitaxy and performance characteristics of Ga/sub 0.47/In/sub 0.53/As/InP double-heterostructure (DH) and multiquantum well (MQW) lasers emitting at 1.47-1.72 ..mu..m. The very low threshold current densities J/sub th/ of 1.3 kA/cm/sup 2/ and 1.5 kA/cm/sup 2/ obtained from DH and MQW laser wafers, respectively, suggest that the present materials and heterointerfaces are superior to those obtained previously by other techniques. In fact, these J/sub th/'s are the lowest obtained thus far for such lasers. Differential quantum efficiency of --18% per facet was obtained for both DH and MQW lasers. Furthermore, we were able to show that there was a definite improvement in the threshold-temperature dependence characteristic coefficient T/sub 0/ from --35-45 K for DH laser wafers to --65-80 K for MQW laser wafers in contrast to previous experimental results.
- Research Organization:
- ATandT Bell Laboratories, Holmdel, New Jersey 07733
- OSTI ID:
- 5158492
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:16; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy
Ga/sub 0. 47/In/sub 0. 53/As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1. 53. mu. m
Room-temperature operation of lattice-matched InP/Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure lasers grown by MBE
Journal Article
·
Mon Jun 01 00:00:00 EDT 1987
· IEEE J. Quant. Electron.; (United States)
·
OSTI ID:6361918
Ga/sub 0. 47/In/sub 0. 53/As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1. 53. mu. m
Journal Article
·
Tue Jan 31 23:00:00 EST 1984
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5247084
Room-temperature operation of lattice-matched InP/Ga/sub 0. 47/In/sub 0. 53/As/InP double-heterostructure lasers grown by MBE
Journal Article
·
Sat Jul 01 00:00:00 EDT 1978
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6803725
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASERS
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD CURRENT
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASERS
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD CURRENT