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Title: Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3

Abstract

The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown (010) β-Ga2O3 Schottky diodes is presented. It is found that after a 10.8 × 1013 cm–2 proton fluence the Schottky barrier height of (1.40 ± 0.05 eV) and the ideality factor of (1.05 ± 0.05 ) are unaffected. Capacitance–voltage extracted net ionized doping curves indicate a carrier removal rate of 268 ± 10 cm–1. The defect states responsible for the observed carrier removal are studied through a combination of deep level transient and optical spectroscopies (DLTS/DLOS) as well as lighted capacitance–voltage (LCV) measurements. The dominating effect on the defect spectrum is due to the Ec-2.0 eV defect state observed in DLOS and LCV. This state accounts for ~75 % of the total trap introduction rate and is the primary source of carrier removal from proton irradiation. Of the DLTS detected states, the Ec-0.72 eV state dominated but had a comparably smaller contribution to the trap introduction. These two traps have previously been correlated with acceptor-like gallium vacancy-related defects. Several other trap states at EC-0.36, EC-0.63, and EC-1.09 eV were newly detected after proton irradiation, and two pre-existing states at EC-1.2 and EC-4.4 eV showed a slight increasemore » in concentration after irradiation, together accounting for the remainder of trap introduction. However, a pre-existing trap at Ec-0.40 eV was found to be insensitive to proton irradiation and, therefore, is likely of extrinsic origin. Furthermore, the comprehensive defect characterization of 1.8 MeV proton irradiation damage can aid the modeling and design for a range of radiation tolerant devices.« less

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2];  [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]
+ Show Author Affiliations
  1. The Ohio State Univ., Columbus, OH (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Georgia Institute of Technology, Atlanta, GA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); Department of the Defense, Defense Threat Reduction Agency; US Air Force Office of Scientific Research (AFOSR)
OSTI Identifier:
1971636
Alternate Identifier(s):
OSTI ID: 1916513; OSTI ID: 2311671
Report Number(s):
SAND-2023-00299J
Journal ID: ISSN 0021-8979; TRN: US2313584
Grant/Contract Number:  
NA0003921; HDTRA11710034; DGE-1343012; FA9550-22-1-0012; NA0003525; Award Number DE-NA0003921
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 133; Journal Issue: 4; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; Electrical properties and parameters; Schottky diodes; Current-voltage characteristic; Semiconductor device defects; Deep level transient spectroscopy; Optical spectroscopy; Radiation damage; Schottky barriers; Chemical vapor deposition; Oxides; electrical properties and parameters; current-voltage characteristic; semiconductor device defects; deep level transient spectroscopy; optical spectroscopy; radiation damage; chemical vapor deposition; oxides

Citation Formats

McGlone, Joe F., Ghadi, Hemant, Cornuelle, Evan, Armstrong, Andrew, Burns, George, Feng, Zixuan, Uddin Bhuiyan, A. F. M. Anhar, Zhao, Hongping, Arehart, Aaron R., and Ringel, Steven A. Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3. United States: N. p., 2023. Web. doi:10.1063/5.0121416.
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McGlone, Joe F., Ghadi, Hemant, Cornuelle, Evan, Armstrong, Andrew, Burns, George, Feng, Zixuan, Uddin Bhuiyan, A. F. M. Anhar, Zhao, Hongping, Arehart, Aaron R., & Ringel, Steven A. Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3. United States. https://doi.org/10.1063/5.0121416
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McGlone, Joe F., Ghadi, Hemant, Cornuelle, Evan, Armstrong, Andrew, Burns, George, Feng, Zixuan, Uddin Bhuiyan, A. F. M. Anhar, Zhao, Hongping, Arehart, Aaron R., and Ringel, Steven A. Wed . "Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3". United States. https://doi.org/10.1063/5.0121416. https://www.osti.gov/servlets/purl/1971636.
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@article{osti_1971636,
title = {Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3},
author = {McGlone, Joe F. and Ghadi, Hemant and Cornuelle, Evan and Armstrong, Andrew and Burns, George and Feng, Zixuan and Uddin Bhuiyan, A. F. M. Anhar and Zhao, Hongping and Arehart, Aaron R. and Ringel, Steven A.},
abstractNote = {The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown (010) β-Ga2O3 Schottky diodes is presented. It is found that after a 10.8 × 1013 cm–2 proton fluence the Schottky barrier height of (1.40 ± 0.05 eV) and the ideality factor of (1.05 ± 0.05 ) are unaffected. Capacitance–voltage extracted net ionized doping curves indicate a carrier removal rate of 268 ± 10 cm–1. The defect states responsible for the observed carrier removal are studied through a combination of deep level transient and optical spectroscopies (DLTS/DLOS) as well as lighted capacitance–voltage (LCV) measurements. The dominating effect on the defect spectrum is due to the Ec-2.0 eV defect state observed in DLOS and LCV. This state accounts for ~75 % of the total trap introduction rate and is the primary source of carrier removal from proton irradiation. Of the DLTS detected states, the Ec-0.72 eV state dominated but had a comparably smaller contribution to the trap introduction. These two traps have previously been correlated with acceptor-like gallium vacancy-related defects. Several other trap states at EC-0.36, EC-0.63, and EC-1.09 eV were newly detected after proton irradiation, and two pre-existing states at EC-1.2 and EC-4.4 eV showed a slight increase in concentration after irradiation, together accounting for the remainder of trap introduction. However, a pre-existing trap at Ec-0.40 eV was found to be insensitive to proton irradiation and, therefore, is likely of extrinsic origin. Furthermore, the comprehensive defect characterization of 1.8 MeV proton irradiation damage can aid the modeling and design for a range of radiation tolerant devices.},
doi = {10.1063/5.0121416},
journal = {Journal of Applied Physics},
number = 4,
volume = 133,
place = {United States},
year = {Wed Jan 25 00:00:00 EST 2023},
month = {Wed Jan 25 00:00:00 EST 2023}
}
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