Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies

Ghadi, Hemant; McGlone, Joe F.; Cornuelle, Evan; Senckowski, Alexander; Sharma, Shivam; Wong, Man Hoi; Singisetti, Uttam; Frodason, Ymir Kalmann; Peelaers, Hartwin; Lyons, John L.; Varley, Joel B.; Van de Walle, Chris G.; Arehart, Aaron; Ringel, Steven A.

doi:10.1063/5.0160541

Title: Identification and characterization of deep nitrogen acceptors in β-Ga₂O₃ using defect spectroscopies

Journal Article · 07 November 2023 · APL Materials

DOI: https://doi.org/10.1063/5.0160541 · OSTI ID:2280490

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The Ohio State University, Columbus, OH (United States)
University of Massachusetts, Lowell, MA (United States)
University of Buffalo, NY (United States)
University of Oslo (Norway)
University of Kansas, Lawrence, KS (United States)
Naval Research Laboratory (NRL), Washington, DC (United States)
Lawrence Livermore National Laboratory (LLNL), San Francisco, CA (United States)
University of Santa Barbara, CA (United States)

The ability to achieve highly resistive beta-phase gallium oxide (β-Ga₂O₃) layers and substrates is critical for β-Ga₂O₃ high voltage and RF devices. To date, the most common approach involves doping with iron (Fe), which generates a moderately deep acceptor-like defect state located at E_C-0.8 eV in the β-Ga₂O₃ bandgap. Recently, there has been growing interest in alternative acceptors, such as magnesium (Mg) and nitrogen (N), due to their predicted deeper energy levels, which could avoid inadvertent charge modulation during device operation. In this work, a systematic study that makes direct correlations between the introduction of N using ion implantation and the observation of a newly observed deep level at E_C-2.9 eV detected by deep-level optical spectroscopy (DLOS) is presented. The concentration of this state displayed a monotonic dependence with N concentration over a range of implant conditions, as confirmed by secondary ion mass spectrometry (SIMS). With a near 1:1 match in absolute N and E_C-2.9 eV trap concentrations from SIMS and DLOS, respectively, which also matched the measured removal of free electrons from capacitance-voltage studies, this indicates that N contributes a very efficiently incorporated compensating defect. Density functional theory calculations confirm the assignment of this state to be an N (0/-1) acceptor with a configuration of N occupying the oxygen site III [N_O(III)]. The near ideal efficiency for this state to compensate free electrons and its location toward the midgap region of the β-Ga₂O₃ bandgap demonstrates the potential of N doping as a promising approach for producing semi-insulating β-Ga₂O₃.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); Strategic Council for Higher Education; University of Kansas General Research Fund

Grant/Contract Number:: AC52-07NA27344; FA8650-19-2-9300; 2151089; FA9550-18-1-0479; FA9550-22-1-0165; ECCS 2019749; ECCS 2231026; ACI-1548562

OSTI ID:: 2280490

Report Number(s):: LLNL-JRNL-852316; 1079537; TRN: US2408619

Journal Information:: APL Materials, Vol. 11, Issue 11; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies

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Title: Identification and characterization of deep nitrogen acceptors in β-Ga₂O₃ using defect spectroscopies