Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies
Abstract
The ability to achieve highly resistive beta-phase gallium oxide (β-Ga2O3) layers and substrates is critical for β-Ga2O3 high voltage and RF devices. To date, the most common approach involves doping with iron (Fe), which generates a moderately deep acceptor-like defect state located at EC-0.8 eV in the β-Ga2O3 bandgap. Recently, there has been growing interest in alternative acceptors, such as magnesium (Mg) and nitrogen (N), due to their predicted deeper energy levels, which could avoid inadvertent charge modulation during device operation. In this work, a systematic study that makes direct correlations between the introduction of N using ion implantation and the observation of a newly observed deep level at EC-2.9 eV detected by deep-level optical spectroscopy (DLOS) is presented. The concentration of this state displayed a monotonic dependence with N concentration over a range of implant conditions, as confirmed by secondary ion mass spectrometry (SIMS). With a near 1:1 match in absolute N and EC-2.9 eV trap concentrations from SIMS and DLOS, respectively, which also matched the measured removal of free electrons from capacitance-voltage studies, this indicates that N contributes a very efficiently incorporated compensating defect. Density functional theory calculations confirm the assignment of this state to be an N (0/-1) acceptor withmore »
- Authors:
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[1];
[2];
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- The Ohio State University, Columbus, OH (United States)
- University of Massachusetts, Lowell, MA (United States)
- University of Buffalo, NY (United States)
- University of Oslo (Norway)
- University of Kansas, Lawrence, KS (United States)
- Naval Research Laboratory (NRL), Washington, DC (United States)
- Lawrence Livermore National Laboratory (LLNL), San Francisco, CA (United States)
- University of Santa Barbara, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); Strategic Council for Higher Education; University of Kansas General Research Fund
- OSTI Identifier:
- 2280490
- Report Number(s):
- LLNL-JRNL-852316
Journal ID: ISSN 2166-532X; 1079537
- Grant/Contract Number:
- AC52-07NA27344; FA8650-19-2-9300; 2151089; FA9550-18-1-0479; FA9550-22-1-0165; ECCS 2019749; ECCS 2231026; ACI-1548562
- Resource Type:
- Accepted Manuscript
- Journal Name:
- APL Materials
- Additional Journal Information:
- Journal Volume: 11; Journal Issue: 11; Journal ID: ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Density functional theory; Doping; Electronic band structure; Semiconductor device fabrication; Crystallographic defects; Ion implantation; Secondary ion mass spectrometry; Spectroscopy; Oxides; Chemical elements
Citation Formats
Ghadi, Hemant, McGlone, Joe F., Cornuelle, Evan, Senckowski, Alexander, Sharma, Shivam, Wong, Man Hoi, Singisetti, Uttam, Frodason, Ymir Kalmann, Peelaers, Hartwin, Lyons, John L., Varley, Joel B., Van de Walle, Chris G., Arehart, Aaron, and Ringel, Steven A. Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies. United States: N. p., 2023.
Web. doi:10.1063/5.0160541.
Ghadi, Hemant, McGlone, Joe F., Cornuelle, Evan, Senckowski, Alexander, Sharma, Shivam, Wong, Man Hoi, Singisetti, Uttam, Frodason, Ymir Kalmann, Peelaers, Hartwin, Lyons, John L., Varley, Joel B., Van de Walle, Chris G., Arehart, Aaron, & Ringel, Steven A. Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies. United States. https://doi.org/10.1063/5.0160541
Ghadi, Hemant, McGlone, Joe F., Cornuelle, Evan, Senckowski, Alexander, Sharma, Shivam, Wong, Man Hoi, Singisetti, Uttam, Frodason, Ymir Kalmann, Peelaers, Hartwin, Lyons, John L., Varley, Joel B., Van de Walle, Chris G., Arehart, Aaron, and Ringel, Steven A. Tue .
"Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies". United States. https://doi.org/10.1063/5.0160541. https://www.osti.gov/servlets/purl/2280490.
@article{osti_2280490,
title = {Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies},
author = {Ghadi, Hemant and McGlone, Joe F. and Cornuelle, Evan and Senckowski, Alexander and Sharma, Shivam and Wong, Man Hoi and Singisetti, Uttam and Frodason, Ymir Kalmann and Peelaers, Hartwin and Lyons, John L. and Varley, Joel B. and Van de Walle, Chris G. and Arehart, Aaron and Ringel, Steven A.},
abstractNote = {The ability to achieve highly resistive beta-phase gallium oxide (β-Ga2O3) layers and substrates is critical for β-Ga2O3 high voltage and RF devices. To date, the most common approach involves doping with iron (Fe), which generates a moderately deep acceptor-like defect state located at EC-0.8 eV in the β-Ga2O3 bandgap. Recently, there has been growing interest in alternative acceptors, such as magnesium (Mg) and nitrogen (N), due to their predicted deeper energy levels, which could avoid inadvertent charge modulation during device operation. In this work, a systematic study that makes direct correlations between the introduction of N using ion implantation and the observation of a newly observed deep level at EC-2.9 eV detected by deep-level optical spectroscopy (DLOS) is presented. The concentration of this state displayed a monotonic dependence with N concentration over a range of implant conditions, as confirmed by secondary ion mass spectrometry (SIMS). With a near 1:1 match in absolute N and EC-2.9 eV trap concentrations from SIMS and DLOS, respectively, which also matched the measured removal of free electrons from capacitance-voltage studies, this indicates that N contributes a very efficiently incorporated compensating defect. Density functional theory calculations confirm the assignment of this state to be an N (0/-1) acceptor with a configuration of N occupying the oxygen site III [NO(III)]. The near ideal efficiency for this state to compensate free electrons and its location toward the midgap region of the β-Ga2O3 bandgap demonstrates the potential of N doping as a promising approach for producing semi-insulating β-Ga2O3.},
doi = {10.1063/5.0160541},
journal = {APL Materials},
number = 11,
volume = 11,
place = {United States},
year = {Tue Nov 07 00:00:00 EST 2023},
month = {Tue Nov 07 00:00:00 EST 2023}
}
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