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Title: Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

Abstract

Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide (BaZrS3) has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS3 thin films at above 1000 °C severely limits their potential for device applications. Herein, we report the synthesis of BaZrS3 thin films at temperatures as low as 500 °C, by changing the chemical reaction pathway. The single phase BaZrS3 thin film was confirmed by X-ray diffraction and Raman spectroscopy. Atomic force microscopy and scanning electron microscopy show that crystalline size and surface roughness were consistently reduced with decreasing annealing temperature. The lower temperatures further eliminate sulfur vacancies and carbon contaminations associated with high temperature processing. The ability to synthesize chalcogenide perovskite thin films at lower temperatures removes a major hurdle for their device fabrication. The photodetectors demonstrate fast response and an on/off ratio of 80. Finally, the fabricated field effect transistors show an ambipolar behavior with electron and hole mobilities of 16.8 cm2/Vs and 2.6 cm2/Vs, respectively.

Authors:
 [1];  [2];  [3];  [2];  [2];  [3];  [3];  [4];  [3];  [5];  [1];  [2]
+ Show Author Affiliations
  1. Xi'an Jiaotong Univ., Shaanxi (China). MOE Key Lab. for Nonequilibrium Synthesis and Modulation of Condensed Matter
  2. Univ. at Buffalo, NY (United States). Dept. of Physics
  3. Univ. at Buffalo, NY (United States). Dept. of Materials Design and Innovation
  4. Chinese Academy of Sciences (CAS), Shanghai (China). Shanghai Inst. of Ceramics, Key Lab. of High Performance Ceramics and Superfine Microstructure
  5. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics & Astronomy
Publication Date:
Research Org.:
State Univ. of New York (SUNY), Albany, NY (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Science Foundation (NSF); National Science Foundation of China (NSFC)
OSTI Identifier:
1848516
Alternate Identifier(s):
OSTI ID: 1782384
Grant/Contract Number:  
EE0007364; 91963111; CBET-1510121; CBET-1510948; MRI-1229208
Resource Type:
Accepted Manuscript
Journal Name:
Nano Energy
Additional Journal Information:
Journal Volume: 85; Journal Issue: C; Journal ID: ISSN 2211-2855
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Chemistry; Science & Technology - Other Topics; Materials Science; Physics; Chalcogenide perovskite; Pulsed laser deposition; Photodetector; Field effect transistor

Citation Formats

Yu, Zhonghai, Wei, Xiucheng, Zheng, Yixiong, Hui, Haolei, Bian, Mengying, Dhole, Samyak, Seo, Jung-Hun, Sun, Yi-Yang, Jia, Quanxi, Zhang, Shengbai, Yang, Sen, and Zeng, Hao. Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing. United States: N. p., 2021. Web. doi:10.1016/j.nanoen.2021.105959.
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Yu, Zhonghai, Wei, Xiucheng, Zheng, Yixiong, Hui, Haolei, Bian, Mengying, Dhole, Samyak, Seo, Jung-Hun, Sun, Yi-Yang, Jia, Quanxi, Zhang, Shengbai, Yang, Sen, & Zeng, Hao. Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing. United States. https://doi.org/10.1016/j.nanoen.2021.105959
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Yu, Zhonghai, Wei, Xiucheng, Zheng, Yixiong, Hui, Haolei, Bian, Mengying, Dhole, Samyak, Seo, Jung-Hun, Sun, Yi-Yang, Jia, Quanxi, Zhang, Shengbai, Yang, Sen, and Zeng, Hao. Sat . "Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing". United States. https://doi.org/10.1016/j.nanoen.2021.105959. https://www.osti.gov/servlets/purl/1848516.
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@article{osti_1848516,
title = {Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing},
author = {Yu, Zhonghai and Wei, Xiucheng and Zheng, Yixiong and Hui, Haolei and Bian, Mengying and Dhole, Samyak and Seo, Jung-Hun and Sun, Yi-Yang and Jia, Quanxi and Zhang, Shengbai and Yang, Sen and Zeng, Hao},
abstractNote = {Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide (BaZrS3) has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS3 thin films at above 1000 °C severely limits their potential for device applications. Herein, we report the synthesis of BaZrS3 thin films at temperatures as low as 500 °C, by changing the chemical reaction pathway. The single phase BaZrS3 thin film was confirmed by X-ray diffraction and Raman spectroscopy. Atomic force microscopy and scanning electron microscopy show that crystalline size and surface roughness were consistently reduced with decreasing annealing temperature. The lower temperatures further eliminate sulfur vacancies and carbon contaminations associated with high temperature processing. The ability to synthesize chalcogenide perovskite thin films at lower temperatures removes a major hurdle for their device fabrication. The photodetectors demonstrate fast response and an on/off ratio of 80. Finally, the fabricated field effect transistors show an ambipolar behavior with electron and hole mobilities of 16.8 cm2/Vs and 2.6 cm2/Vs, respectively.},
doi = {10.1016/j.nanoen.2021.105959},
journal = {Nano Energy},
number = C,
volume = 85,
place = {United States},
year = {Sat Mar 06 00:00:00 EST 2021},
month = {Sat Mar 06 00:00:00 EST 2021}
}
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