Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics
Abstract
BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7–1.8 eV, a very strong light-matter interaction, and a high chemical stability. Due to the lack of quality thin films, however, many fundamental properties of chalcogenide perovskites remain unknown, hindering their applications in optoelectronics. In this work, we report the fabrication of BaZrS3 thin films, by sulfurization of oxide films deposited by pulsed laser deposition. We show that these films are n-type with carrier densities in the range of 1019-1020 cm-3. Depending on the processing temperature, the Hall mobility ranges from 2.1 to 13.7 cm2/Vs. The absorption coefficient is > 105 cm-1 at photon energy >1.97 eV. Temperature dependent conductivity measurements suggest shallow donor levels. By assuring that BaZrS3 is a promising candidate, these results potentially unleash the family of chalcogenide perovskites for optoelectronics such as photodetectors, photovoltaics, and light emitting diodes.
- Authors:
-
[2];
[3];
[5];
[3];
[1];
[1]
- State Univ. of New York (SUNY), Buffalo, NY (United States)
- Taiyuan Normal Univ. (China)
- Southern Univ. of Science & Technology, Shenzhen (China)
- Xi'an Jiaotong Univ. (China)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Chinese Academy of Sciences (CAS), Shanghai (China)
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Publication Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Laboratory Directed Research and Development (LDRD) Program; National Science Foundation (NSF); Natural Science Foundation of China (NSFC)
- OSTI Identifier:
- 1648108
- Alternate Identifier(s):
- OSTI ID: 1694277
- Report Number(s):
- LA-UR-20-24151
Journal ID: ISSN 2211-2855
- Grant/Contract Number:
- 89233218CNA000001; CBET-1510121; CBET-1510948; MRI-1229208; EE0007364; 11774365
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Energy
- Additional Journal Information:
- Journal Volume: 68; Journal ID: ISSN 2211-2855
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; material science; chalcogenide perovskite; absorption coefficient; Hall effect; carrier mobility; defects
Citation Formats
Wei, Xiucheng, Hui, Haolei, Zhao, Chuan, Deng, Chenhua, Han, Mengjiao, Yu, Zhonghai, Sheng, Aaron, Roy, Pinku, Chen, Aiping, Lin, Junhao, Watson, David F., Sun, Yi-Yang, Thomay, Tim, Yang, Sen, Jia, Quanxi, Zhang, Shengbai, and Zeng, Hao. Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics. United States: N. p., 2019.
Web. doi:10.1016/j.nanoen.2019.104317.
Wei, Xiucheng, Hui, Haolei, Zhao, Chuan, Deng, Chenhua, Han, Mengjiao, Yu, Zhonghai, Sheng, Aaron, Roy, Pinku, Chen, Aiping, Lin, Junhao, Watson, David F., Sun, Yi-Yang, Thomay, Tim, Yang, Sen, Jia, Quanxi, Zhang, Shengbai, & Zeng, Hao. Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics. United States. https://doi.org/10.1016/j.nanoen.2019.104317
Wei, Xiucheng, Hui, Haolei, Zhao, Chuan, Deng, Chenhua, Han, Mengjiao, Yu, Zhonghai, Sheng, Aaron, Roy, Pinku, Chen, Aiping, Lin, Junhao, Watson, David F., Sun, Yi-Yang, Thomay, Tim, Yang, Sen, Jia, Quanxi, Zhang, Shengbai, and Zeng, Hao. Fri .
"Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics". United States. https://doi.org/10.1016/j.nanoen.2019.104317. https://www.osti.gov/servlets/purl/1648108.
@article{osti_1648108,
title = {Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics},
author = {Wei, Xiucheng and Hui, Haolei and Zhao, Chuan and Deng, Chenhua and Han, Mengjiao and Yu, Zhonghai and Sheng, Aaron and Roy, Pinku and Chen, Aiping and Lin, Junhao and Watson, David F. and Sun, Yi-Yang and Thomay, Tim and Yang, Sen and Jia, Quanxi and Zhang, Shengbai and Zeng, Hao},
abstractNote = {BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7–1.8 eV, a very strong light-matter interaction, and a high chemical stability. Due to the lack of quality thin films, however, many fundamental properties of chalcogenide perovskites remain unknown, hindering their applications in optoelectronics. In this work, we report the fabrication of BaZrS3 thin films, by sulfurization of oxide films deposited by pulsed laser deposition. We show that these films are n-type with carrier densities in the range of 1019-1020 cm-3. Depending on the processing temperature, the Hall mobility ranges from 2.1 to 13.7 cm2/Vs. The absorption coefficient is > 105 cm-1 at photon energy >1.97 eV. Temperature dependent conductivity measurements suggest shallow donor levels. By assuring that BaZrS3 is a promising candidate, these results potentially unleash the family of chalcogenide perovskites for optoelectronics such as photodetectors, photovoltaics, and light emitting diodes.},
doi = {10.1016/j.nanoen.2019.104317},
journal = {Nano Energy},
number = ,
volume = 68,
place = {United States},
year = {Fri Nov 22 00:00:00 EST 2019},
month = {Fri Nov 22 00:00:00 EST 2019}
}
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