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Title: Stability and Band-Gap Tuning of the Chalcogenide Perovskite BaZrS3 in Raman and Optical Investigations at High Pressures

Abstract

Here, we report experiments and calculations investigating the pressure and temperature dependences of the optical phonons in BaZrS3, and the pressure dependence of its absorption edge. BaZrS3 is a chalcogenide perovskite in a novel class of materials being considered for photovoltaics. It is studied by Raman spectroscopy as functions of temperature (at 1 atm) and pressure (at 120 and 295 K), and by pressure-transmission spectroscopy at 295 K. Density-functional-theory calculations predict the allowed Raman lines, their intensities, their pressure shifts, and the band-gap pressure shift. Cooling shifts all but one of the phonon peaks to higher frequencies; the temperature coefficients are typical of semiconductors. A strong low-temperature peak at 392.3 cm-1 is attributed to resonant forbidden LO scattering; its shift with temperature has the opposite sign. The pressure coefficients of the phonon frequencies for all observed Raman peaks are positive, indicating no mode softening. The rates of pressure shift also are typical, and show the customary scaling with phonon frequency. Experiment and theory show good agreement on the pressure-induced frequency shifts. The BaZrS3 absorption edge moves to lower energy with pressure, reflecting a reduction of the band gap. The measured shift is ~-0.015 eV / GPa, slightly less than themore » density-functional-theory result of -0.025 eV / GPa. We find no evidence that the perovskite structure of BaZrS3 undergoes any phase changes under hydrostatic pressure to at least 8.9 GPa. Our results indicate the robust structural stability of BaZrS3, and suggest cation alloying as a viable approach for band-gap engineering for photovoltaic and other applications.« less

Authors:
 [1];  [2];  [1];  [1];  [1];  [2];  [1];  [1]
  1. Univ. at Buffalo, NY (United States)
  2. Rensselaer Polytechnic Inst., Troy, NY (United States)
Publication Date:
Research Org.:
State Univ. of New York (SUNY), Albany, NY (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Science Foundation (NSF)
OSTI Identifier:
1540694
Alternate Identifier(s):
OSTI ID: 1404738
Grant/Contract Number:  
EE0007364; DMR-1104994; CBET-1510121; CBET-1510948; MRI-1229208
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 8; Journal Issue: 4; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; physics; band gap; pressure effects; chalcogenides; perovskite; photovoltaic absorbers; semiconductor compounds; solar cells; inelastic light scattering

Citation Formats

Gross, Nelson, Sun, Yi-Yang, Perera, Samanthe, Hui, Haolei, Wei, Xiucheng, Zhang, Shengbai, Zeng, Hao, and Weinstein, B.  A. Stability and Band-Gap Tuning of the Chalcogenide Perovskite BaZrS3 in Raman and Optical Investigations at High Pressures. United States: N. p., 2017. Web. doi:10.1103/physrevapplied.8.044014.
Gross, Nelson, Sun, Yi-Yang, Perera, Samanthe, Hui, Haolei, Wei, Xiucheng, Zhang, Shengbai, Zeng, Hao, & Weinstein, B.  A. Stability and Band-Gap Tuning of the Chalcogenide Perovskite BaZrS3 in Raman and Optical Investigations at High Pressures. United States. https://doi.org/10.1103/physrevapplied.8.044014
Gross, Nelson, Sun, Yi-Yang, Perera, Samanthe, Hui, Haolei, Wei, Xiucheng, Zhang, Shengbai, Zeng, Hao, and Weinstein, B.  A. Wed . "Stability and Band-Gap Tuning of the Chalcogenide Perovskite BaZrS3 in Raman and Optical Investigations at High Pressures". United States. https://doi.org/10.1103/physrevapplied.8.044014. https://www.osti.gov/servlets/purl/1540694.
@article{osti_1540694,
title = {Stability and Band-Gap Tuning of the Chalcogenide Perovskite BaZrS3 in Raman and Optical Investigations at High Pressures},
author = {Gross, Nelson and Sun, Yi-Yang and Perera, Samanthe and Hui, Haolei and Wei, Xiucheng and Zhang, Shengbai and Zeng, Hao and Weinstein, B.  A.},
abstractNote = {Here, we report experiments and calculations investigating the pressure and temperature dependences of the optical phonons in BaZrS3, and the pressure dependence of its absorption edge. BaZrS3 is a chalcogenide perovskite in a novel class of materials being considered for photovoltaics. It is studied by Raman spectroscopy as functions of temperature (at 1 atm) and pressure (at 120 and 295 K), and by pressure-transmission spectroscopy at 295 K. Density-functional-theory calculations predict the allowed Raman lines, their intensities, their pressure shifts, and the band-gap pressure shift. Cooling shifts all but one of the phonon peaks to higher frequencies; the temperature coefficients are typical of semiconductors. A strong low-temperature peak at 392.3 cm-1 is attributed to resonant forbidden LO scattering; its shift with temperature has the opposite sign. The pressure coefficients of the phonon frequencies for all observed Raman peaks are positive, indicating no mode softening. The rates of pressure shift also are typical, and show the customary scaling with phonon frequency. Experiment and theory show good agreement on the pressure-induced frequency shifts. The BaZrS3 absorption edge moves to lower energy with pressure, reflecting a reduction of the band gap. The measured shift is ~-0.015 eV / GPa, slightly less than the density-functional-theory result of -0.025 eV / GPa. We find no evidence that the perovskite structure of BaZrS3 undergoes any phase changes under hydrostatic pressure to at least 8.9 GPa. Our results indicate the robust structural stability of BaZrS3, and suggest cation alloying as a viable approach for band-gap engineering for photovoltaic and other applications.},
doi = {10.1103/physrevapplied.8.044014},
journal = {Physical Review Applied},
number = 4,
volume = 8,
place = {United States},
year = {Wed Oct 25 00:00:00 EDT 2017},
month = {Wed Oct 25 00:00:00 EDT 2017}
}

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