A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS3 Films

Dhole, Samyak; Wei, Xiucheng; Hui, Haolei; Roy, Pinku; Corey, Zachary; Wang, Yongqiang; Nie, Wanyi; Chen, Aiping; Zeng, Hao; Jia, Quanxi

doi:10.3390/photonics10040366

Title: A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS₃ Films

Journal Article · 24 March 2023 · Photonics

DOI: https://doi.org/10.3390/photonics10040366 · OSTI ID:2281522

Dhole, Samyak ^[1]; Wei, Xiucheng ^[1]; Hui, Haolei ^[1]; Roy, Pinku ^[1]; Corey, Zachary ^[1];

^[2]; Nie, Wanyi ^[2]; Chen, Aiping ^[2]; Zeng, Hao ^[1];

^[1]

State University of New York at Buffalo, NY (United States)
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)

The prototypical chalcogenide perovskite, BaZrS₃ (BZS), with its direct bandgap of 1.7–1.8 eV, high chemical stability, and strong light–matter interactions, has garnered significant interest over the past few years. So far, attempts to grow BaZrS₃ films have been limited mainly to physical vapor deposition techniques. Here, we report the fabrication of BZS thin films via a facile aqueous solution route of polymer-assisted deposition (PAD), where the polymer-chelated cation precursor films were sulfurized in a mixed CS₂ and Ar atmosphere. The formation of a single-phase polycrystalline BZS thin film at a processing temperature of 900 °C was confirmed by X-ray diffraction and Raman spectroscopy. The stoichiometry of the films was verified by Rutherford Backscattering spectrometry and energy-dispersive X-ray spectroscopy. The BZS films showed a photoluminescence peak at around 1.8 eV and exhibited a photogenerated current under light illumination at a wavelength of 530 nm. Temperature-dependent resistivity analysis revealed that the conduction of BaZrS₃ films under the dark condition could be described by the Efros–Shklovskii variable range hopping model in the temperature range of 60–300 K, with an activation energy of about 44 meV.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: 89233218CNA000001

OSTI ID:: 2281522

Report Number(s):: LA-UR-23-30564

Journal Information:: Photonics, Journal Name: Photonics Journal Issue: 4 Vol. 10; ISSN 2304-6732

Publisher:: MDPICopyright Statement

Country of Publication:: United States

Language:: English

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Title: A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS3 Films

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Title: A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS₃ Films