Engineering Tunneling Selector to Achieve High Non-linearity for 1S1R Integration
Abstract
Memristor devices have been extensively studied as one of the most promising technologies for next-generation non-volatile memory. However, for the memristor devices to have a real technological impact, they must be densely packed in a large crossbar array (CBA) exceeding Gigabytes in size. Devising a selector device that is CMOS compatible, 3D stackable, and has a high non-linearity (NL) and great endurance is a crucial enabling ingredient to reach this goal. Tunneling based selectors are very promising in these aspects, but the mediocre NL value limits their applications in large passive crossbar arrays. In this work, we demonstrated a trilayer tunneling selector based on the Ge/Pt/TaN1+x/Ta2O5/TaN1+x/Pd layers that could achieve a NL of 3 × 105, which is the highest NL achieved using a tunnel selector so far. The record-high tunneling NL is partially attributed to the bottom electrode's ultra-smoothness (BE) induced by a Ge/Pt layer. We further demonstrated the feasibility of 1S1R (1-selector 1-resistor) integration by vertically integrating a Pd/Ta2O5/Ru based memristor on top of the proposed selector.
- Authors:
-
- Univ. of Massachusetts, Amherst, MA (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Western Digital, San Jose, CA (United States)
- Univ. of Massachusetts, Amherst, MA (United States)
- Univ. of Massachusetts, Amherst, MA (United States); Univ. of Southern California, Los Angeles, CA (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1817406
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Frontiers in Nanotechnology
- Additional Journal Information:
- Journal Volume: 3; Journal Issue: 656026; Journal ID: ISSN 2673-3013
- Publisher:
- Frontiers Media S.A.
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; selectors; high non-linearity; vertically integrated 1S1R; crossbar arrays; memristor
Citation Formats
Upadhyay, Navnidhi K., Blum, Thomas, Maksymovych, Petro, Lavrik, Nickolay V., Davila, Noraica, Katine, Jordan A., Ievlev, A. V., Chi, Miaofang, Xia, Qiangfei, and Yang, J. Joshua. Engineering Tunneling Selector to Achieve High Non-linearity for 1S1R Integration. United States: N. p., 2021.
Web. doi:10.3389/fnano.2021.656026.
Upadhyay, Navnidhi K., Blum, Thomas, Maksymovych, Petro, Lavrik, Nickolay V., Davila, Noraica, Katine, Jordan A., Ievlev, A. V., Chi, Miaofang, Xia, Qiangfei, & Yang, J. Joshua. Engineering Tunneling Selector to Achieve High Non-linearity for 1S1R Integration. United States. https://doi.org/10.3389/fnano.2021.656026
Upadhyay, Navnidhi K., Blum, Thomas, Maksymovych, Petro, Lavrik, Nickolay V., Davila, Noraica, Katine, Jordan A., Ievlev, A. V., Chi, Miaofang, Xia, Qiangfei, and Yang, J. Joshua. Thu .
"Engineering Tunneling Selector to Achieve High Non-linearity for 1S1R Integration". United States. https://doi.org/10.3389/fnano.2021.656026. https://www.osti.gov/servlets/purl/1817406.
@article{osti_1817406,
title = {Engineering Tunneling Selector to Achieve High Non-linearity for 1S1R Integration},
author = {Upadhyay, Navnidhi K. and Blum, Thomas and Maksymovych, Petro and Lavrik, Nickolay V. and Davila, Noraica and Katine, Jordan A. and Ievlev, A. V. and Chi, Miaofang and Xia, Qiangfei and Yang, J. Joshua},
abstractNote = {Memristor devices have been extensively studied as one of the most promising technologies for next-generation non-volatile memory. However, for the memristor devices to have a real technological impact, they must be densely packed in a large crossbar array (CBA) exceeding Gigabytes in size. Devising a selector device that is CMOS compatible, 3D stackable, and has a high non-linearity (NL) and great endurance is a crucial enabling ingredient to reach this goal. Tunneling based selectors are very promising in these aspects, but the mediocre NL value limits their applications in large passive crossbar arrays. In this work, we demonstrated a trilayer tunneling selector based on the Ge/Pt/TaN1+x/Ta2O5/TaN1+x/Pd layers that could achieve a NL of 3 × 105, which is the highest NL achieved using a tunnel selector so far. The record-high tunneling NL is partially attributed to the bottom electrode's ultra-smoothness (BE) induced by a Ge/Pt layer. We further demonstrated the feasibility of 1S1R (1-selector 1-resistor) integration by vertically integrating a Pd/Ta2O5/Ru based memristor on top of the proposed selector.},
doi = {10.3389/fnano.2021.656026},
journal = {Frontiers in Nanotechnology},
number = 656026,
volume = 3,
place = {United States},
year = {Thu Apr 15 00:00:00 EDT 2021},
month = {Thu Apr 15 00:00:00 EDT 2021}
}
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