An accurate locally active memristor model for S-type negative differential resistance in NbO{sub x}
- Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304 (United States)
- PTD-PPS, Hewlett-Packard Company, 1070 NE Circle Boulevard, Corvallis, Oregon 97330 (United States)
A number of important commercial applications would benefit from the introduction of easily manufactured devices that exhibit current-controlled, or “S-type,” negative differential resistance (NDR). A leading example is emerging non-volatile memory based on crossbar array architectures. Due to the inherently linear current vs. voltage characteristics of candidate non-volatile memristor memory elements, individual memory cells in these crossbar arrays can be addressed only if a highly non-linear circuit element, termed a “selector,” is incorporated in the cell. Selectors based on a layer of niobium oxide sandwiched between two electrodes have been investigated by a number of groups because the NDR they exhibit provides a promisingly large non-linearity. We have developed a highly accurate compact dynamical model for their electrical conduction that shows that the NDR in these devices results from a thermal feedback mechanism. A series of electrothermal measurements and numerical simulations corroborate this model. These results reveal that the leakage currents can be minimized by thermally isolating the selector or by incorporating materials with larger activation energies for electron motion.
- OSTI ID:
- 22489304
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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