Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors

Li, Can; Han, Lili; Jiang, Hao; Jang, Moon -Hyung; Lin, Peng; Wu, Qing; Barnell, Mark; Yang, J. Joshua; Xin, Huolin L.; Xia, Qiangfei

doi:10.1038/ncomms15666

Title: Three-dimensional crossbar arrays of self-rectifying Si/SiO₂/Si memristors

Journal Article · Mon Jun 05 00:00:00 EDT 2017 · Nature Communications

DOI:https://doi.org/10.1038/ncomms15666· OSTI ID:1437443

^[1]; Han, Lili ^[2]; Jiang, Hao ^[1];

^[1]; Lin, Peng ^[1]; Wu, Qing ^[3]; Barnell, Mark ^[3]; Yang, J. Joshua ^[1];

^[4]; Xia, Qiangfei ^[1]

Univ. of Massachusetts, Amherst, MA (United States)
Univ. of Massachusetts, Amherst, MA (United States); Brookhaven National Lab. (BNL), Upton, NY (United States); Tianjin Univ. of Technology, Tianjin (China)
Air Force Research Lab., Rome, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)

Memristors are promising building blocks for the next generation memory, unconventional computing systems and beyond. Currently common materials used to build memristors are not necessarily compatible with the silicon dominant complementary metal-oxide-semiconductor (CMOS) technology. Furthermore, external selector devices or circuits are usually required in order for large memristor arrays to function properly, resulting in increased circuit complexity. Here we demonstrate fully CMOS-compatible, all-silicon based and self-rectifying memristors that negate the need for external selectors in large arrays. It consists of p- and n-type doped single crystalline silicon electrodes and a thin chemically produced silicon oxide switching layer. The device exhibits repeatable resistance switching behavior with high rectifying ratio (10⁵), high ON/OFF conductance ratio (10⁴) and attractive retention at 300 °C. We further build a 5-layer 3-dimensional (3D) crossbar array of 100 nm memristors by stacking fluid supported silicon membranes. The CMOS compatibility and self-rectifying behavior open up opportunities for mass production of memristor arrays and 3D hybrid circuits on full-wafer scale silicon and flexible substrates without increasing circuit complexity.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1437443

Report Number(s):: BNL-204647-2018-JAAM

Journal Information:: Nature Communications, Vol. 8; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 94 works

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