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Title: Bidirectional threshold switching characteristics in Ag/ZrO{sub 2}/Pt electrochemical metallization cells

Abstract

A bidirectional threshold switching (TS) characteristic was demonstrated in Ag/ZrO{sub 2}/Pt electrochemical metallization cells by using the electrochemical active Ag electrode and appropriate programming operation strategies The volatile TS was stable and reproducible and the rectify ratio could be tuned to ∼10{sup 7} by engineering the compliance current. We infer that the volatile behavior is essentially due to the moisture absorption in the electron beam evaporated films, which remarkably improved the anodic oxidation as well as the migration of Ag{sup +} ions. The resultant electromotive force would act as a driving force for the metal filaments dissolution, leading to the spontaneous volatile characteristics. Moreover, conductance quantization behaviors were also achieved owing to formation and annihilation of atomic scale metal filaments in the film matrix. Our results illustrate that the Ag/ZrO{sub 2}/Pt device with superior TS performances is a promising candidate for selector applications in passive crossbar arrays.

Authors:
; ; ;  [1];  [2]
  1. College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China)
  2. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123 (China)
Publication Date:
OSTI Identifier:
22611394
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ANNIHILATION; CURRENTS; DISSOLUTION; ELECTROCHEMISTRY; ELECTROMOTIVE FORCE; ELECTRON BEAMS; ELECTRONS; FILAMENTS; FILMS; INDIUM FLUORIDES; METALS; MOISTURE; OXIDATION; PERFORMANCE; PLATINUM; QUANTIZATION; SILVER; ZIRCONIUM OXIDES

Citation Formats

Du, Gang, E-mail: dugang@hdu.edu.cn, Li, Hongxia, Mao, Qinan, Ji, Zhenguo, and Wang, Chao. Bidirectional threshold switching characteristics in Ag/ZrO{sub 2}/Pt electrochemical metallization cells. United States: N. p., 2016. Web. doi:10.1063/1.4961709.
Du, Gang, E-mail: dugang@hdu.edu.cn, Li, Hongxia, Mao, Qinan, Ji, Zhenguo, & Wang, Chao. Bidirectional threshold switching characteristics in Ag/ZrO{sub 2}/Pt electrochemical metallization cells. United States. doi:10.1063/1.4961709.
Du, Gang, E-mail: dugang@hdu.edu.cn, Li, Hongxia, Mao, Qinan, Ji, Zhenguo, and Wang, Chao. Mon . "Bidirectional threshold switching characteristics in Ag/ZrO{sub 2}/Pt electrochemical metallization cells". United States. doi:10.1063/1.4961709.
@article{osti_22611394,
title = {Bidirectional threshold switching characteristics in Ag/ZrO{sub 2}/Pt electrochemical metallization cells},
author = {Du, Gang, E-mail: dugang@hdu.edu.cn and Li, Hongxia and Mao, Qinan and Ji, Zhenguo and Wang, Chao},
abstractNote = {A bidirectional threshold switching (TS) characteristic was demonstrated in Ag/ZrO{sub 2}/Pt electrochemical metallization cells by using the electrochemical active Ag electrode and appropriate programming operation strategies The volatile TS was stable and reproducible and the rectify ratio could be tuned to ∼10{sup 7} by engineering the compliance current. We infer that the volatile behavior is essentially due to the moisture absorption in the electron beam evaporated films, which remarkably improved the anodic oxidation as well as the migration of Ag{sup +} ions. The resultant electromotive force would act as a driving force for the metal filaments dissolution, leading to the spontaneous volatile characteristics. Moreover, conductance quantization behaviors were also achieved owing to formation and annihilation of atomic scale metal filaments in the film matrix. Our results illustrate that the Ag/ZrO{sub 2}/Pt device with superior TS performances is a promising candidate for selector applications in passive crossbar arrays.},
doi = {10.1063/1.4961709},
journal = {AIP Advances},
number = 8,
volume = 6,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2016},
month = {Mon Aug 15 00:00:00 EDT 2016}
}