Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
|
journal
|
November 2011 |
Observation of conducting filament growth in nanoscale resistive memories
|
journal
|
January 2012 |
Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor
|
journal
|
February 2014 |
Morphological and electrical changes in TiO 2 memristive devices induced by electroforming and switching: Morphological and electrical changes in TiO 2 memristive devices
|
journal
|
November 2009 |
Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching
|
journal
|
July 2010 |
Direct Identification of the Conducting Channels in a Functioning Memristive Device
|
journal
|
June 2010 |
The Migration of Metal and Oxygen during Anodic Film Formation
|
journal
|
January 1965 |
The mechanism of electroforming of metal oxide memristive switches
|
journal
|
May 2009 |
Cross point arrays of 8 nm × 8 nm memristive devices fabricated with nanoimprint lithography
- Pi, Shuang; Lin, Peng; Xia, Qiangfei
-
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 6
https://doi.org/10.1116/1.4827021
|
journal
|
November 2013 |
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
|
journal
|
April 2010 |
Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
|
journal
|
September 2015 |
Retention failure analysis of metal-oxide based resistive memory
|
journal
|
September 2014 |
Growth Laws of Bilayer Anodized Tantalum Oxide Films Formed in Phosphoric Acid
|
journal
|
January 2010 |
Resistive Switching Mechanisms on TaO x and SrRuO 3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy
|
journal
|
December 2015 |
Memristive switching mechanism for metal/oxide/metal nanodevices
|
journal
|
June 2008 |
Effect of voltage polarity and amplitude on electroforming of TiO2 based memristive devices
|
journal
|
January 2013 |
The missing memristor found
|
journal
|
May 2008 |
Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic
|
journal
|
October 2009 |
Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM
|
journal
|
March 2013 |
High switching endurance in TaOx memristive devices
|
journal
|
December 2010 |
Sub-nanosecond switching of a tantalum oxide memristor
|
journal
|
November 2011 |
Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
|
journal
|
April 2009 |
The Measurement of Ionic Mobilities in the Anodic Oxides of Tantalum and Zirconium by a Precision Sectioning Technique
|
journal
|
January 1968 |
Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices
|
journal
|
May 2012 |
Joint contributions of Ag ions and oxygen vacancies to conducting filament evolution of Ag/TaO x /Pt memory device
|
journal
|
October 2014 |
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
|
journal
|
July 2009 |
Synaptic plasticity: LTP and LTD
|
journal
|
June 1994 |
Nanoscale molecular-switch crossbar circuits
|
journal
|
March 2003 |
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
|
journal
|
July 2011 |
Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices
|
journal
|
May 2010 |
Investigation of LRS dependence on the retention of HRS in CBRAM
|
journal
|
February 2015 |
Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors
|
journal
|
February 2012 |
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
|
journal
|
January 2010 |
Memristor-The missing circuit element
|
journal
|
January 1971 |
Improvement of Endurance and Switching Stability of Forming-Free CuxO RRAM
|
conference
|
May 2008 |
Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model
|
conference
|
December 2011 |
Microscopic understanding of the low resistance state retention in HfO2 and HfAlO based RRAM
|
conference
|
December 2014 |
Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device
|
conference
|
June 2014 |
Metal–Oxide RRAM
|
journal
|
June 2012 |
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
|
journal
|
November 2011 |
Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
|
journal
|
April 2009 |
Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic
|
journal
|
October 2009 |
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
|
journal
|
April 2010 |
Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors
|
journal
|
February 2012 |
The missing memristor found
|
journal
|
May 2008 |
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
|
journal
|
July 2011 |
Memristive switching mechanism for metal/oxide/metal nanodevices
|
journal
|
June 2008 |
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
|
journal
|
January 2010 |
Effect of voltage polarity and amplitude on electroforming of TiO2 based memristive devices
|
journal
|
January 2013 |
Sub-nanosecond switching of a tantalum oxide memristor
|
journal
|
November 2011 |