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Title: Tellurene Photodetector with High Gain and Wide Bandwidth

Abstract

Two-dimensional (2D) semiconductors have been extensively explored as a new class of materials with great potential. In particular, black phosphorus (BP) has been considered to be a strong candidate for applications such as high-performance infrared photodetectors. However, the scalability of BP thin film is still a challenge, and its poor stability in the air has hampered the progress of the commercialization of BP devices. Herein, we report the use of hydrothermal-synthesized and air-stable 2D tellurene nanoflakes for broadband and ultrasensitive photodetection. The tellurene nanoflakes show high hole mobilities up to 458 cm2/V·s at ambient conditions, and the tellurene photodetector presents peak extrinsic responsivity of 383 A/W, 19.2 mA/W, and 18.9 mA/W at 520 nm, 1.55 μm, and 3.39 μm light wavelength, respectively. Because of the photogating effect, high gains up to 1.9 × 103 and 3.15 × 104 are obtained at 520 nm and 3.39 μm wavelength, respectively. At the communication wavelength of 1.55 μm, the tellurene photodetector exhibits an exceptionally high anisotropic behavior, and a large bandwidth of 37 MHz is obtained. The photodetection performance at different wavelength is further supported by the corresponding quantum molecular dynamics (QMD) simulations. Our approach has demonstrated the air-stable tellurene photodetectors that fullymore » cover the short-wave infrared band with ultrafast photoresponse.« less

Authors:
 [1]; ORCiD logo [1];  [1];  [2];  [3];  [2];  [3];  [1];  [4];  [3];  [5];  [5]; ORCiD logo [6];  [6]; ORCiD logo [6]; ORCiD logo [6]; ORCiD logo [7];  [8]; ORCiD logo [9]; ORCiD logo [4] more »; ORCiD logo [9] « less
  1. Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Dept. of Electrical Engineering
  2. Univ. of Southern California, Los Angeles, CA (United States). Dept. of Physics
  3. Univ. of Southern California, Los Angeles, CA (United States). Mork Family Dept. of Chemical Engineering and Materials Science
  4. Purdue Univ., West Lafayette, IN (United States). School of Industrial Engineering
  5. Kumamoto Univ. (Japan). Dept. of Physics
  6. Univ. of Southern California, Los Angeles, CA (United States). Collaboratory for Advanced Computing and Simulations
  7. King Abdulaziz City for Science and Technology, Riyadh (Saudi Arabia). Center of Excellence for Green Nanotechnologies. Joint Centers of Excellence Program; Univ. of California, Los Angeles, CA (United States). Dept. of Electrical Engineering
  8. Univ. of Jeddah (Saudi Arabia). Dept. of Electrical and Computer Engineering; King Abdulaziz Univ., Jeddah (Saudi Arabia). Dept. of Electrical and Computer Engineering
  9. Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Dept. of Electrical Engineering. Mork Family Dept. of Chemical Engineering and Materials Science
Publication Date:
Research Org.:
Univ. of Southern California, Los Angeles, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1802692
Grant/Contract Number:  
SC0014607
Resource Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 14; Journal Issue: 1; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; photodetector; two-dimensional (2D); tellurene; high gain; wide bandwidth; air-stable

Citation Formats

Shen, Chenfei, Liu, Yihang, Wu, Jiangbin, Xu, Chi, Cui, Dingzhou, Li, Zhen, Liu, Qingzhou, Li, Yuanrui, Wang, Yixiu, Cao, Xuan, Kumazoe, Hiroyuki, Shimojo, Fuyuki, Krishnamoorthy, Aravind, Kalia, Rajiv K., Nakano, Aiichiro, Vashishta, Priya D., Amer, Mor R., Abbas, Ahmad N., Wang, Han, Wu, Wenzhuo, and Zhou, Chongwu. Tellurene Photodetector with High Gain and Wide Bandwidth. United States: N. p., 2019. Web. doi:10.1021/acsnano.9b04507.
Shen, Chenfei, Liu, Yihang, Wu, Jiangbin, Xu, Chi, Cui, Dingzhou, Li, Zhen, Liu, Qingzhou, Li, Yuanrui, Wang, Yixiu, Cao, Xuan, Kumazoe, Hiroyuki, Shimojo, Fuyuki, Krishnamoorthy, Aravind, Kalia, Rajiv K., Nakano, Aiichiro, Vashishta, Priya D., Amer, Mor R., Abbas, Ahmad N., Wang, Han, Wu, Wenzhuo, & Zhou, Chongwu. Tellurene Photodetector with High Gain and Wide Bandwidth. United States. https://doi.org/10.1021/acsnano.9b04507
Shen, Chenfei, Liu, Yihang, Wu, Jiangbin, Xu, Chi, Cui, Dingzhou, Li, Zhen, Liu, Qingzhou, Li, Yuanrui, Wang, Yixiu, Cao, Xuan, Kumazoe, Hiroyuki, Shimojo, Fuyuki, Krishnamoorthy, Aravind, Kalia, Rajiv K., Nakano, Aiichiro, Vashishta, Priya D., Amer, Mor R., Abbas, Ahmad N., Wang, Han, Wu, Wenzhuo, and Zhou, Chongwu. Fri . "Tellurene Photodetector with High Gain and Wide Bandwidth". United States. https://doi.org/10.1021/acsnano.9b04507. https://www.osti.gov/servlets/purl/1802692.
@article{osti_1802692,
title = {Tellurene Photodetector with High Gain and Wide Bandwidth},
author = {Shen, Chenfei and Liu, Yihang and Wu, Jiangbin and Xu, Chi and Cui, Dingzhou and Li, Zhen and Liu, Qingzhou and Li, Yuanrui and Wang, Yixiu and Cao, Xuan and Kumazoe, Hiroyuki and Shimojo, Fuyuki and Krishnamoorthy, Aravind and Kalia, Rajiv K. and Nakano, Aiichiro and Vashishta, Priya D. and Amer, Mor R. and Abbas, Ahmad N. and Wang, Han and Wu, Wenzhuo and Zhou, Chongwu},
abstractNote = {Two-dimensional (2D) semiconductors have been extensively explored as a new class of materials with great potential. In particular, black phosphorus (BP) has been considered to be a strong candidate for applications such as high-performance infrared photodetectors. However, the scalability of BP thin film is still a challenge, and its poor stability in the air has hampered the progress of the commercialization of BP devices. Herein, we report the use of hydrothermal-synthesized and air-stable 2D tellurene nanoflakes for broadband and ultrasensitive photodetection. The tellurene nanoflakes show high hole mobilities up to 458 cm2/V·s at ambient conditions, and the tellurene photodetector presents peak extrinsic responsivity of 383 A/W, 19.2 mA/W, and 18.9 mA/W at 520 nm, 1.55 μm, and 3.39 μm light wavelength, respectively. Because of the photogating effect, high gains up to 1.9 × 103 and 3.15 × 104 are obtained at 520 nm and 3.39 μm wavelength, respectively. At the communication wavelength of 1.55 μm, the tellurene photodetector exhibits an exceptionally high anisotropic behavior, and a large bandwidth of 37 MHz is obtained. The photodetection performance at different wavelength is further supported by the corresponding quantum molecular dynamics (QMD) simulations. Our approach has demonstrated the air-stable tellurene photodetectors that fully cover the short-wave infrared band with ultrafast photoresponse.},
doi = {10.1021/acsnano.9b04507},
journal = {ACS Nano},
number = 1,
volume = 14,
place = {United States},
year = {Fri Dec 20 00:00:00 EST 2019},
month = {Fri Dec 20 00:00:00 EST 2019}
}

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