Optical and electrical properties of two-dimensional palladium diselenide
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- Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Nanyang Technological Univ. (Singapore). Center for Programmable Materials, School of Materials Science and Engineering
- Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
- Nanyang Technological Univ. (Singapore). Center for Programmable Materials, School of Materials Science and Engineering; City Univ. of Hong Kong (Hong Kong). Dept. of Chemistry
Two-dimensional (2D) noble-metal dichalcogenides exhibit exceptionally strong thickness-dependent bandgaps, which can be leveraged in a wide variety of device applications. A detailed study of their optical (e.g., optical bandgaps) and electrical properties (e.g., mobilities) is important in determining potential future applications of these materials. Here, we perform detailed optical and electrical characterization of 2D PdSe2 nanoflakes mechanically exfoliated from a single-crystalline source. Layer-dependent bandgap analysis from optical absorption results indicates that this material is an indirect semiconductor with bandgaps of approximately 1.37 and 0.50 eV for the monolayer and bulk, respectively. Spectral photoresponse measurements further confirm these bandgap values. Moreover, temperature-dependent electrical measurements of a 6.8-nm-thick PdSe2 flake-based transistor show effective electron mobilities of 130 and 520 cm2 V–1 s–1 at 300 K and 77 K, respectively. Finally, we demonstrate that PdSe2 can be utilized for short-wave infrared photodetectors. A room-temperature specific detectivity (D*) of 1.8 × 1010 cm Hz1/2 W–1 at 1 μm with a band edge at 1.94 μm is achieved on a 6.8-nm-thick PdSe2 flake-based photodetector.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). The Molecular Foundry (TMF)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; Defense Advanced Research Projects Agency (DARPA)
- Grant/Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1638989
- Alternate ID(s):
- OSTI ID: 1529042
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 114; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Photoresponse of wafer-scale palladium diselenide films prepared by selenization method
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journal | December 2019 |
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