Solution-Synthesized High-Mobility Tellurium Nanoflakes for Short-Wave Infrared Photodetectors
Abstract
Two-dimensional (2D) materials, particularly black phosphorus (bP), have demonstrated themselves to be excellent candidates for high-performance infrared photodetectors and transistors. However, high-quality bP can be obtained only via mechanical exfoliation from high-temperature- and high-pressure-grown bulk crystals and degrades rapidly when exposed to ambient conditions. In this paper, we report solution-synthesized and air-stable quasi-2D tellurium (Te) nanoflakes for short-wave infrared (SWIR) photodetectors. We perform comprehensive optical characterization via polarization-resolved transmission and reflection measurements and report the absorbance and complex refractive index of Te crystals. It is found that this material is an indirect semiconductor with a band gap of 0.31 eV. From temperature-dependent electrical measurements, we confirm this band-gap value and find that 12 nm thick Te nanoflakes show high hole mobilities of 450 and 1430 cm2 V–1 s–1 at 300 and 77 K, respectively. Finally, we demonstrate that despite its indirect band gap, Te can be utilized for high-performance SWIR photodetectors by employing optical cavity substrates consisting of Au/Al2O3 to dramatically increase the absorption in the semiconductor. By changing the thickness of the Al2O3 cavity, the peak responsivity of Te photoconductors can be tuned from 1.4 μm (13 A/W) to 2.4 μm (8 A/W) with a cutoff wavelength of 3.4more »
- Authors:
-
[1];
[1];
[1];
[1];
[3];
[4];
[5];
[6];
[3];
[1]
- Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences and Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
- Univ. of Melbourne (Australia). School of Physics
- Department of Electrical and Electronic Engineering, University of Melbourne, Melbourne, Victoria 3010, Australia
- Univ. of Melbourne (Australia). School of Physics and Dept. of Electrical and Electronic Engineering
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; Defense Advanced Research Projects Agency (DARPA)
- OSTI Identifier:
- 1638979
- Grant/Contract Number:
- AC02-05CH11231; HR0011-16-1-0004
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Nano
- Additional Journal Information:
- Journal Volume: 12; Journal Issue: 7; Journal ID: ISSN 1936-0851
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; tellurium; 2D materials; solution-synthesized; high-mobility; short-wave infrared; photodetectors
Citation Formats
Amani, Matin, Tan, Chaoliang, Zhang, George, Zhao, Chunsong, Bullock, James, Song, Xiaohui, Kim, Hyungjin, Shrestha, Vivek Raj, Gao, Yang, Crozier, Kenneth B., Scott, Mary, and Javey, Ali. Solution-Synthesized High-Mobility Tellurium Nanoflakes for Short-Wave Infrared Photodetectors. United States: N. p., 2018.
Web. doi:10.1021/acsnano.8b03424.
Amani, Matin, Tan, Chaoliang, Zhang, George, Zhao, Chunsong, Bullock, James, Song, Xiaohui, Kim, Hyungjin, Shrestha, Vivek Raj, Gao, Yang, Crozier, Kenneth B., Scott, Mary, & Javey, Ali. Solution-Synthesized High-Mobility Tellurium Nanoflakes for Short-Wave Infrared Photodetectors. United States. https://doi.org/10.1021/acsnano.8b03424
Amani, Matin, Tan, Chaoliang, Zhang, George, Zhao, Chunsong, Bullock, James, Song, Xiaohui, Kim, Hyungjin, Shrestha, Vivek Raj, Gao, Yang, Crozier, Kenneth B., Scott, Mary, and Javey, Ali. Mon .
"Solution-Synthesized High-Mobility Tellurium Nanoflakes for Short-Wave Infrared Photodetectors". United States. https://doi.org/10.1021/acsnano.8b03424. https://www.osti.gov/servlets/purl/1638979.
@article{osti_1638979,
title = {Solution-Synthesized High-Mobility Tellurium Nanoflakes for Short-Wave Infrared Photodetectors},
author = {Amani, Matin and Tan, Chaoliang and Zhang, George and Zhao, Chunsong and Bullock, James and Song, Xiaohui and Kim, Hyungjin and Shrestha, Vivek Raj and Gao, Yang and Crozier, Kenneth B. and Scott, Mary and Javey, Ali},
abstractNote = {Two-dimensional (2D) materials, particularly black phosphorus (bP), have demonstrated themselves to be excellent candidates for high-performance infrared photodetectors and transistors. However, high-quality bP can be obtained only via mechanical exfoliation from high-temperature- and high-pressure-grown bulk crystals and degrades rapidly when exposed to ambient conditions. In this paper, we report solution-synthesized and air-stable quasi-2D tellurium (Te) nanoflakes for short-wave infrared (SWIR) photodetectors. We perform comprehensive optical characterization via polarization-resolved transmission and reflection measurements and report the absorbance and complex refractive index of Te crystals. It is found that this material is an indirect semiconductor with a band gap of 0.31 eV. From temperature-dependent electrical measurements, we confirm this band-gap value and find that 12 nm thick Te nanoflakes show high hole mobilities of 450 and 1430 cm2 V–1 s–1 at 300 and 77 K, respectively. Finally, we demonstrate that despite its indirect band gap, Te can be utilized for high-performance SWIR photodetectors by employing optical cavity substrates consisting of Au/Al2O3 to dramatically increase the absorption in the semiconductor. By changing the thickness of the Al2O3 cavity, the peak responsivity of Te photoconductors can be tuned from 1.4 μm (13 A/W) to 2.4 μm (8 A/W) with a cutoff wavelength of 3.4 μm, fully capturing the SWIR band. An optimized room-temperature specific detectivity (D*) of 2 × 109 cm Hz1/2 W–1 is obtained at a wavelength of 1.7 μm.},
doi = {10.1021/acsnano.8b03424},
journal = {ACS Nano},
number = 7,
volume = 12,
place = {United States},
year = {Mon Jun 18 00:00:00 EDT 2018},
month = {Mon Jun 18 00:00:00 EDT 2018}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Cited by: 219 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Nanometre-scale electronics with III–V compound semiconductors
journal, November 2011
- del Alamo, Jesús A.
- Nature, Vol. 479, Issue 7373
Ballistic InAs Nanowire Transistors
journal, January 2013
- Chuang, Steven; Gao, Qun; Kapadia, Rehan
- Nano Letters, Vol. 13, Issue 2
Review of current progress in quantum dot infrared photodetectors: Current progress in QDIPs
journal, December 2009
- Barve, A. V.; Lee, S. J.; Noh, S. K.
- Laser & Photonics Reviews, Vol. 4, Issue 6
High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices
journal, April 2016
- Hoang, Anh Minh; Dehzangi, Arash; Adhikary, Sourav
- Scientific Reports, Vol. 6, Issue 1
New concepts in infrared photodetector designs
journal, December 2014
- Martyniuk, P.; Antoszewski, J.; Martyniuk, M.
- Applied Physics Reviews, Vol. 1, Issue 4
2.6 μm InGaAs photodiodes
journal, September 1988
- Martinelli, Ramon U.; Zamerowski, Thomas J.; Longeway, Paul A.
- Applied Physics Letters, Vol. 53, Issue 11
InGaAsP heterostructure avalanche photodiodes with high avalanche gain
journal, August 1979
- Nishida, Katsuhiko; Taguchi, Kenko; Matsumoto, Yoshishige
- Applied Physics Letters, Vol. 35, Issue 3
Direct growth of single-crystalline III–V semiconductors on amorphous substrates
journal, January 2016
- Chen, Kevin; Kapadia, Rehan; Harker, Audrey
- Nature Communications, Vol. 7, Issue 1
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
journal, November 2010
- Ko, Hyunhyub; Takei, Kuniharu; Kapadia, Rehan
- Nature, Vol. 468, Issue 7321
Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
journal, July 1992
- Fitzgerald, E. A.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 10, Issue 4
Remote epitaxy through graphene enables two-dimensional material-based layer transfer
journal, April 2017
- Kim, Yunjo; Cruz, Samuel S.; Lee, Kyusang
- Nature, Vol. 544, Issue 7650
Performance of low dark current InGaAs shortwave infrared detector
conference, October 2012
- Li, Tao; Cheng, Ji-feng; Shao, Xiu-mei
- 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), SPIE Proceedings
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
journal, March 2017
- Tan, Chaoliang; Cao, Xiehong; Wu, Xue-Jun
- Chemical Reviews, Vol. 117, Issue 9
2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications
journal, December 2016
- Lin, Zhong; McCreary, Amber; Briggs, Natalie
- 2D Materials, Vol. 3, Issue 4
Near-unity photoluminescence quantum yield in MoS2
journal, November 2015
- Amani, M.; Lien, D. -H.; Kiriya, D.
- Science, Vol. 350, Issue 6264
Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides
journal, March 2016
- Amani, Matin; Taheri, Peyman; Addou, Rafik
- Nano Letters, Vol. 16, Issue 4
MoS2 transistors with 1-nanometer gate lengths
journal, October 2016
- Desai, S. B.; Madhvapathy, S. R.; Sachid, A. B.
- Science, Vol. 354, Issue 6308
Large-area and bright pulsed electroluminescence in monolayer semiconductors
journal, March 2018
- Lien, Der-Hsien; Amani, Matin; Desai, Sujay B.
- Nature Communications, Vol. 9, Issue 1
Electrically Switchable Chiral Light-Emitting Transistor
journal, April 2014
- Zhang, Y. J.; Oka, T.; Suzuki, R.
- Science, Vol. 344, Issue 6185
Measuring the Edge Recombination Velocity of Monolayer Semiconductors
journal, August 2017
- Zhao, Peida; Amani, Matin; Lien, Der-Hsien
- Nano Letters, Vol. 17, Issue 9
Field-effect transistors made from solution-grown two-dimensional tellurene
journal, April 2018
- Wang, Yixiu; Qiu, Gang; Wang, Ruoxing
- Nature Electronics, Vol. 1, Issue 4
Structure and Conductivity in the VI b Group of the Periodic System
journal, April 1948
- von Hippel, A.
- The Journal of Chemical Physics, Vol. 16, Issue 4
The Nature of Bonding in Bulk Tellurium Composed of One-Dimensional Helical Chains
journal, April 2018
- Yi, Seho; Zhu, Zhili; Cai, Xiaolin
- Inorganic Chemistry, Vol. 57, Issue 9
Bulk β -Te to few layered β -tellurenes: indirect to direct band-Gap transitions showing semiconducting property
journal, September 2017
- Wu, Bozhao; Liu, Xinghui; Yin, Jiuren
- Materials Research Express, Vol. 4, Issue 9
High-Quality Luminescent Tellurium Nanowires of Several Nanometers in Diameter and High Aspect Ratio Synthesized by a Poly (Vinyl Pyrrolidone)-Assisted Hydrothermal Process
journal, April 2006
- Qian, Hai-Sheng; Yu, Shu-Hong; Gong, Jun-Yan
- Langmuir, Vol. 22, Issue 8
One-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-Transport
journal, May 2017
- Du, Yuchen; Qiu, Gang; Wang, Yixiu
- Nano Letters, Vol. 17, Issue 6
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
journal, March 2014
- Liu, Han; Neal, Adam T.; Zhu, Zhen
- ACS Nano, Vol. 8, Issue 4
Black phosphorus field-effect transistors
journal, March 2014
- Li, Likai; Yu, Yijun; Ye, Guo Jun
- Nature Nanotechnology, Vol. 9, Issue 5
Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors
journal, January 2012
- Takei, Kuniharu; Madsen, Morten; Fang, Hui
- Nano Letters, Vol. 12, Issue 4
Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013
- Radisavljevic, Branimir; Kis, Andras
- Nature Materials, Vol. 12, Issue 9
Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics
journal, March 2004
- Javey, Ali; Guo, Jing; Farmer, Damon B.
- Nano Letters, Vol. 4, Issue 3
Engineering Light Outcoupling in 2D Materials
journal, January 2015
- Lien, Der-Hsien; Kang, Jeong Seuk; Amani, Matin
- Nano Letters, Vol. 15, Issue 2
Measuring the Refractive Index of Highly Crystalline Monolayer MoS2 with High Confidence
journal, February 2015
- Zhang, Hui; Ma, Yaoguang; Wan, Yi
- Scientific Reports, Vol. 5, Issue 1
Mid-Wave Infrared Photoconductors Based on Black Phosphorus-Arsenic Alloys
journal, September 2017
- Amani, Matin; Regan, Emma; Bullock, James
- ACS Nano, Vol. 11, Issue 11
Black Phosphorus Mid-Infrared Photodetectors with High Gain
journal, June 2016
- Guo, Qiushi; Pospischil, Andreas; Bhuiyan, Maruf
- Nano Letters, Vol. 16, Issue 7
Ultimate performance of infrared photodetectors and figure of merit of detector material
journal, March 1997
- Piotrowski, J.; Gawron, W.
- Infrared Physics & Technology, Vol. 38, Issue 2
Theory of Photoconductivity in Semiconductor Films
journal, December 1956
- Petritz, Richard L.
- Physical Review, Vol. 104, Issue 6
Photoconductive gain and generation‐recombination noise in multiple‐quantum‐well infrared detectors
journal, December 1993
- Beck, W. A.
- Applied Physics Letters, Vol. 63, Issue 26
Noise and photoconductive gain in InAs quantum-dot infrared photodetectors
journal, August 2003
- Ye, Zhengmao; Campbell, Joe C.; Chen, Zhonghui
- Applied Physics Letters, Vol. 83, Issue 6
Works referencing / citing this record:
Electronics from solution-processed 2D semiconductors
journal, January 2019
- Gao, Xiangxiang; Bian, Gang; Zhu, Jian
- Journal of Materials Chemistry C, Vol. 7, Issue 41
Broad spectral response of an individual tellurium nanobelt grown by molecular beam epitaxy
journal, January 2019
- Kang, Songdan; Dai, Tian; Ma, Xingyuan
- Nanoscale, Vol. 11, Issue 4
Contact engineering high-performance ambipolar multilayer tellurium transistors
journal, December 2019
- Qin, Fanglu; Hu, Yunxia; Hu, PingAn
- Nanotechnology, Vol. 31, Issue 11
Van der Waals thin-film electronics
journal, September 2019
- Lin, Zhaoyang; Huang, Yu; Duan, Xiangfeng
- Nature Electronics, Vol. 2, Issue 9
Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes
journal, February 2020
- Qin, Jing-Kai; Liao, Pai-Ying; Si, Mengwei
- Nature Electronics, Vol. 3, Issue 3
High‐Performance, Room Temperature, Ultra‐Broadband Photodetectors Based on Air‐Stable PdSe 2
journal, April 2019
- Liang, Qijie; Wang, Qixing; Zhang, Qian
- Advanced Materials
Bull's eye grating integrated with optical nanoantennas for plasmonic enhancement of graphene long-wave infrared photodetectors
journal, March 2019
- Sefidmooye Azar, Nima; Shrestha, Vivek Raj; Crozier, Kenneth B.
- Applied Physics Letters, Vol. 114, Issue 9
Low-cost writing method for self-powered paper-based UV photodetectors utilizing Te/TiO 2 and Te/ZnO heterojunctions
journal, January 2019
- Zhang, Yong; Xu, Wenxin; Xu, Xiaojie
- Nanoscale Horizons, Vol. 4, Issue 2
Two-dimensional tellurium–polymer membrane for ultrafast photonics
journal, January 2019
- Guo, Jia; Zhao, Jinlai; Huang, Dazhou
- Nanoscale, Vol. 11, Issue 13
2D material broadband photodetectors
journal, January 2020
- Yao, Jiandong; Yang, Guowei
- Nanoscale, Vol. 12, Issue 2
Hydrogen‐Assisted Growth of Ultrathin Te Flakes with Giant Gate‐Dependent Photoresponse
journal, September 2019
- Zhang, Xun; Jiang, Jizhou; Suleiman, Abdulsalam Aji
- Advanced Functional Materials, Vol. 29, Issue 49
The Xenes Generations: A Taxonomy of Epitaxial Single‐Element 2D Materials
journal, September 2019
- Grazianetti, Carlo; Martella, Christian; Molle, Alessandro
- physica status solidi (RRL) – Rapid Research Letters, Vol. 14, Issue 2
Infrared ultrafast spectroscopy of solution-grown thin film tellurium
journal, August 2019
- Iyer, Vasudevan; Segovia, Mauricio; Wang, Yixiu
- Physical Review B, Vol. 100, Issue 7
Progress, Challenges, and Opportunities for 2D Material Based Photodetectors
journal, September 2018
- Long, Mingsheng; Wang, Peng; Fang, Hehai
- Advanced Functional Materials, Vol. 29, Issue 19
Van der Waals Integration of Bismuth Quantum Dots–Decorated Tellurium Nanotubes (Te@Bi) Heterojunctions and Plasma‐Enhanced Optoelectronic Applications
journal, October 2019
- Zhang, Ye; Zhang, Feng; Wu, Leiming
- Small, Vol. 15, Issue 47
Anisotropic thermal conductivity in 2D tellurium
journal, November 2019
- Huang, Shouyuan; Segovia, Mauricio; Yang, Xiaolong
- 2D Materials, Vol. 7, Issue 1
Optical and electrical properties of two-dimensional palladium diselenide
journal, June 2019
- Zhang, George; Amani, Matin; Chaturvedi, Apoorva
- Applied Physics Letters, Vol. 114, Issue 25
In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects
journal, January 2020
- Zhao, Siwen; Dong, Baojuan; Wang, Huide
- Nanoscale Advances, Vol. 2, Issue 1
A high-pressure mechanism for realizing sub-10 nm tellurium nanoflakes on arbitrary substrates
journal, July 2019
- Hussain, Naveed; Rafique, Mohsin; Anwar, Tauseef
- 2D Materials, Vol. 6, Issue 4
Recent Advances in the Functional 2D Photonic and Optoelectronic Devices
journal, December 2018
- Wang, Xiaoting; Cui, Yu; Li, Tao
- Advanced Optical Materials, Vol. 7, Issue 3
Emerging Applications of Elemental 2D Materials
journal, October 2019
- Glavin, Nicholas R.; Rao, Rahul; Varshney, Vikas
- Advanced Materials, Vol. 32, Issue 7
High temperature synthesis and characterization of ultrathin tellurium nanostructures
journal, August 2019
- Sapkota, Keshab R.; Lu, Ping; Medlin, Douglas L.
- APL Materials, Vol. 7, Issue 8
Control of highly anisotropic electrical conductance of tellurene by strain-engineering
journal, January 2019
- Ma, Huanhuan; Hu, Wei; Yang, Jinlong
- Nanoscale, Vol. 11, Issue 45
Optical and electrical properties of two-dimensional anisotropic materials
journal, June 2019
- Zhou, Ziqi; Cui, Yu; Tan, Ping-Heng
- Journal of Semiconductors, Vol. 40, Issue 6
One-Pot Hydrothermal Synthesis of Thin Tellurene Nanosheet and Its Formation Mechanism
journal, December 2019
- Gao, Mei; Wang, Xinwei; Hong, Yuanze
- Journal of Nanomaterials, Vol. 2019
Solar-blind deep-ultraviolet photodetectors based on solution-synthesized quasi-2D Te nanosheets
journal, February 2020
- Cao, Rui; Zhang, Ye; Wang, Huide
- Nanophotonics, Vol. 9, Issue 8
The Xenes Generations: A Taxonomy of Epitaxial Single‐Element 2D Materials
journal, September 2019
- Grazianetti, Carlo; Martella, Christian; Molle, Alessandro
- physica status solidi (RRL) – Rapid Research Letters, Vol. 14, Issue 2
Emerging Applications of Elemental 2D Materials.
text, January 2020
- Glavin, Nicholas R.; Rao, Rahul; Varshney, Vikas
- Apollo - University of Cambridge Repository