Electrical and Optical Properties of n-Type Indium-Doped CdTe/Mg0.46Cd0.54Te Double Heterostructures

Zhao, Xin-Hao; Liu, Shi; Zhao, Yuan; Campbell, Calli M.; Lassise, Maxwell B.; Kuo, Ying-Shen; Zhang, Yong-Hang

doi:10.1109/JPHOTOV.2016.2514742

Title: Electrical and Optical Properties of n-Type Indium-Doped CdTe/Mg_0.46Cd_0.54Te Double Heterostructures

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Abstract

CdTe/Mg_0.46 Cd_0.54 Te double heterostructures with n-type In doping concentrations, varied from 1 × 10¹⁶ to 7 × 10¹⁸ cm^-3, have been grown on InSb substrates using molecular beam epitaxy. Secondary ion mass spectroscopy measurements show strong diffusion of In from the InSb substrate to the CdTe buffer layer, while the In concentration is constant in the CdTe layer between the two Mg_0.46 Cd_0.54 Te barrier layers. Capacitance–voltage measurements show that the dopants are 100% ionized for the doping concentration range from 1 × 10¹⁶ to 1 × 10¹⁸ cm^-3. Additionally, the carrier lifetime decreases with increasing doping concentration (from 0.73 μs for an unintentionally doped sample to 0.74 ns for a 1 × 10¹⁸ cm^-3 doped sample) due to the decrease of both radiative and nonradiative lifetimes. Decent carrier lifetimes are achieved (~100 ns) between 1 × 10¹⁶ and 1 × 10¹⁷ cm^-3 doping levels, which is beneficial for developing n-type monocrystalline CdTe solar cells, photodetectors, and other optoelectronic devices. Lastly, the strongest photoluminescence intensity is observed when the doping concentration is 1 × 10¹⁷ cm^-3, which corresponds to the highest internal quantum efficiency.

Authors:

Zhao, Xin-Hao ^[1]; Liu, Shi ^[1]; Zhao, Yuan ^[1]; Campbell, Calli M. ^[1]; Lassise, Maxwell B. ^[1]; Kuo, Ying-Shen ^[1]; Zhang, Yong-Hang ^[1]

Arizona State Univ., Tempe, AZ (United States)

Publication Date:: Mon Jan 18 00:00:00 EST 2016

Research Org.:: Stanford Univ., CA (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1579863

Grant/Contract Number:: EE0004946; AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Journal of Photovoltaics

Additional Journal Information:: Journal Volume: 6; Journal Issue: 2; Journal ID: ISSN 2156-3381

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; Carrier lifetime; CdTe; doping; MgxCd1-xTe; molecular beam epitaxy (MBE); solar cells

Citation Formats


                    Zhao, Xin-Hao, Liu, Shi, Zhao, Yuan, Campbell, Calli M., Lassise, Maxwell B., Kuo, Ying-Shen, and Zhang, Yong-Hang. Electrical and Optical Properties of n-Type Indium-Doped CdTe/Mg0.46Cd0.54Te Double Heterostructures.  United States: N. p., 2016. 
Web.  doi:10.1109/JPHOTOV.2016.2514742.

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                    Zhao, Xin-Hao, Liu, Shi, Zhao, Yuan, Campbell, Calli M., Lassise, Maxwell B., Kuo, Ying-Shen, & Zhang, Yong-Hang. Electrical and Optical Properties of n-Type Indium-Doped CdTe/Mg0.46Cd0.54Te Double Heterostructures.  United States.  https://doi.org/10.1109/JPHOTOV.2016.2514742

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                    Zhao, Xin-Hao, Liu, Shi, Zhao, Yuan, Campbell, Calli M., Lassise, Maxwell B., Kuo, Ying-Shen, and Zhang, Yong-Hang. Mon .  
"Electrical and Optical Properties of n-Type Indium-Doped CdTe/Mg0.46Cd0.54Te Double Heterostructures".  United States.  https://doi.org/10.1109/JPHOTOV.2016.2514742.  https://www.osti.gov/servlets/purl/1579863.

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@article{osti_1579863,

  title        = {Electrical and Optical Properties of n-Type Indium-Doped CdTe/Mg0.46Cd0.54Te Double Heterostructures},

  author       = {Zhao, Xin-Hao and Liu, Shi and Zhao, Yuan and Campbell, Calli M. and Lassise, Maxwell B. and Kuo, Ying-Shen and Zhang, Yong-Hang},

  abstractNote = {CdTe/Mg0.46 Cd0.54 Te double heterostructures with n-type In doping concentrations, varied from 1 × 1016 to 7 × 1018 cm-3, have been grown on InSb substrates using molecular beam epitaxy. Secondary ion mass spectroscopy measurements show strong diffusion of In from the InSb substrate to the CdTe buffer layer, while the In concentration is constant in the CdTe layer between the two Mg0.46 Cd0.54 Te barrier layers. Capacitance–voltage measurements show that the dopants are 100% ionized for the doping concentration range from 1 × 1016 to 1 × 1018 cm-3. Additionally, the carrier lifetime decreases with increasing doping concentration (from 0.73 μs for an unintentionally doped sample to 0.74 ns for a 1 × 1018 cm-3 doped sample) due to the decrease of both radiative and nonradiative lifetimes. Decent carrier lifetimes are achieved (~100 ns) between 1 × 1016 and 1 × 1017 cm-3 doping levels, which is beneficial for developing n-type monocrystalline CdTe solar cells, photodetectors, and other optoelectronic devices. Lastly, the strongest photoluminescence intensity is observed when the doping concentration is 1 × 1017 cm-3, which corresponds to the highest internal quantum efficiency.},

  doi          = {10.1109/JPHOTOV.2016.2514742},

  journal      = {IEEE Journal of Photovoltaics},

  number       = 2,

  volume       = 6,

  place        = {United States},

  year         = {Mon Jan 18 00:00:00 EST 2016},

  month        = {Mon Jan 18 00:00:00 EST 2016}

}

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Title: Electrical and Optical Properties of n-Type Indium-Doped CdTe/Mg0.46Cd0.54Te Double Heterostructures

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Title: Electrical and Optical Properties of n-Type Indium-Doped CdTe/Mg_0.46Cd_0.54Te Double Heterostructures