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Title: Carrier lifetimes and interface recombination velocities in CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructures with different Mg compositions grown by molecular beam epitaxy

Abstract

The interface recombination velocities of CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg{sub 0.46}Cd{sub 0.54}Te interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.

Authors:
; ; ;  [1]; ;  [1]
  1. Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States)
Publication Date:
OSTI Identifier:
22486373
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; CADMIUM TELLURIDES; CARRIER LIFETIME; CARRIERS; GALLIUM ARSENIDES; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RECOMBINATION; THERMIONIC EMISSION; THICKNESS; TIME RESOLUTION

Citation Formats

Liu, Shi, Lassise, Maxwell B., Zhao, Yuan, Zhang, Yong-Hang, School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, Zhao, Xin-Hao, Campbell, Calli M., and School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287. Carrier lifetimes and interface recombination velocities in CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructures with different Mg compositions grown by molecular beam epitaxy. United States: N. p., 2015. Web. doi:10.1063/1.4927757.
Liu, Shi, Lassise, Maxwell B., Zhao, Yuan, Zhang, Yong-Hang, School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, Zhao, Xin-Hao, Campbell, Calli M., & School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287. Carrier lifetimes and interface recombination velocities in CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructures with different Mg compositions grown by molecular beam epitaxy. United States. doi:10.1063/1.4927757.
Liu, Shi, Lassise, Maxwell B., Zhao, Yuan, Zhang, Yong-Hang, School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, Zhao, Xin-Hao, Campbell, Calli M., and School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287. Mon . "Carrier lifetimes and interface recombination velocities in CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructures with different Mg compositions grown by molecular beam epitaxy". United States. doi:10.1063/1.4927757.
@article{osti_22486373,
title = {Carrier lifetimes and interface recombination velocities in CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructures with different Mg compositions grown by molecular beam epitaxy},
author = {Liu, Shi and Lassise, Maxwell B. and Zhao, Yuan and Zhang, Yong-Hang and School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 and Zhao, Xin-Hao and Campbell, Calli M. and School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287},
abstractNote = {The interface recombination velocities of CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg{sub 0.46}Cd{sub 0.54}Te interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.},
doi = {10.1063/1.4927757},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 4,
volume = 107,
place = {United States},
year = {2015},
month = {7}
}