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Title: Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1– xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy

Abstract

The interface recombination velocities of CdTe/MgxCd1–xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg0.46Cd0.54Te interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. As a result, the impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [1]
  1. Arizona State Univ., Tempe, AZ (United States)
Publication Date:
Research Org.:
Stanford Univ., Stamfprd, CA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1579851
Grant/Contract Number:  
EE0004946; FA9550-12-1-0444
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 4; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Liu, Shi, Zhao, Xin -Hao, Campbell, Calli M., Lassise, Maxwell B., Zhao, Yuan, and Zhang, Yong -Hang. Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1– xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy. United States: N. p., 2015. Web. doi:10.1063/1.4927757.
Liu, Shi, Zhao, Xin -Hao, Campbell, Calli M., Lassise, Maxwell B., Zhao, Yuan, & Zhang, Yong -Hang. Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1– xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy. United States. doi:10.1063/1.4927757.
Liu, Shi, Zhao, Xin -Hao, Campbell, Calli M., Lassise, Maxwell B., Zhao, Yuan, and Zhang, Yong -Hang. Mon . "Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1– xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy". United States. doi:10.1063/1.4927757. https://www.osti.gov/servlets/purl/1579851.
@article{osti_1579851,
title = {Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1– xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy},
author = {Liu, Shi and Zhao, Xin -Hao and Campbell, Calli M. and Lassise, Maxwell B. and Zhao, Yuan and Zhang, Yong -Hang},
abstractNote = {The interface recombination velocities of CdTe/MgxCd1–xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg0.46Cd0.54Te interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. As a result, the impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.},
doi = {10.1063/1.4927757},
journal = {Applied Physics Letters},
number = 4,
volume = 107,
place = {United States},
year = {2015},
month = {7}
}

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