Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy
Abstract
High resolution measurements of the carrier profile in semiconductor devices is required as the semiconductor industry progresses from the 10-nm lithography node to 7-nm and beyond. We examine the factors which determine the resolution of the present method of scanning spreading resistance microscopy as well as such factors for the newer method of scanning frequency comb microscopy that is now under development. Also, for the first time, we consider the sensitivity of both methods to the location of heterogeneities in the semiconductor. In addition, mesoscopic effects on these measurements are considered for the first time. Two simple analytical models are extended to study the sensitivity to heterogeneities as well as mesoscopic effects.
- Authors:
-
[3]
- NewPath Research L.L.C., Salt Lake City, UT (United States)
- Mu’tah University, Al-Karak (Jordan)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Publication Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1479944
- Report Number(s):
- LA-UR-18-29738
Journal ID: ISSN 2287-5123
- Grant/Contract Number:
- AC52-06NA25396; SC0006339
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Microscopy
- Additional Journal Information:
- Journal Volume: 47; Journal Issue: 3; Journal ID: ISSN 2287-5123
- Publisher:
- Korean Society of Microscopy
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Carrier profiling; Scanning spreading resistance microscopy; Scanning frequency comb microscopy
Citation Formats
Hagmann, Mark J., Mousa, Marwan S., and Yarotski, Dmitry Anatolievitch. Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy. United States: N. p., 2017.
Web. doi:10.9729/AM.2017.47.3.95.
Hagmann, Mark J., Mousa, Marwan S., & Yarotski, Dmitry Anatolievitch. Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy. United States. https://doi.org/10.9729/AM.2017.47.3.95
Hagmann, Mark J., Mousa, Marwan S., and Yarotski, Dmitry Anatolievitch. Sat .
"Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy". United States. https://doi.org/10.9729/AM.2017.47.3.95. https://www.osti.gov/servlets/purl/1479944.
@article{osti_1479944,
title = {Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy},
author = {Hagmann, Mark J. and Mousa, Marwan S. and Yarotski, Dmitry Anatolievitch},
abstractNote = {High resolution measurements of the carrier profile in semiconductor devices is required as the semiconductor industry progresses from the 10-nm lithography node to 7-nm and beyond. We examine the factors which determine the resolution of the present method of scanning spreading resistance microscopy as well as such factors for the newer method of scanning frequency comb microscopy that is now under development. Also, for the first time, we consider the sensitivity of both methods to the location of heterogeneities in the semiconductor. In addition, mesoscopic effects on these measurements are considered for the first time. Two simple analytical models are extended to study the sensitivity to heterogeneities as well as mesoscopic effects.},
doi = {10.9729/AM.2017.47.3.95},
journal = {Applied Microscopy},
number = 3,
volume = 47,
place = {United States},
year = {Sat Sep 30 00:00:00 EDT 2017},
month = {Sat Sep 30 00:00:00 EDT 2017}
}
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Works referencing / citing this record:
Simulation of sub-nm carrier profiling by scanning frequency comb microscopy
journal, May 2019
- Hagmann, M. J.; Wiedemeier, J.
- AIP Advances, Vol. 9, Issue 5