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Title: High-resolution and site-specific scanning spreading resistance microscopy and its applications to silicon devices

Abstract

Due to the continuous reduction of the critical dimensions of semiconductor devices, it becomes very important to know the two dimensional (2D) doping profile for improving device performance. Scanning spreading resistance microscopy (SSRM) performed in high vacuum is a powerful technique for quantitative 2D-doping profiling, with high spatial resolution and wide dynamic range of carrier concentration, as well as capability of site-specific analysis for accurate position. In this paper, we review SSRM applications to source/drain engineering in Si devices and their correlation with device characteristics by demonstrating several case studies. Direct observation of (110)/(100) CMOSFETs clarified significant differences between both pFETs and nFETs on (110) and (100) silicon substrates, revealing 2D channeling effect of boron ion implantation in pFETs; as well as silicidation impact on junction leakage-current characteristics in nFETs. Furthermore, our sample-preparation breakthrough enables site-specific SSRM characterization within 60 nm ultra thin samples and therefore failure analysis of real SRAM devices, demonstrating the high potential of SSRM technology for further device scaling and for failure analysis.

Authors:
; ; ;  [1]
  1. Advanced LSI Technology Laboratory, Corporate R and D Center, Quality Assurance Dept., Oita Operations, Semiconductor Company, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 212-8582 (Japan)
Publication Date:
OSTI Identifier:
22075702
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; BORON IONS; CHANNELING; CORRELATIONS; CRYSTAL STRUCTURE; ION IMPLANTATION; ION MICROSCOPY; LEAKAGE CURRENT; MOSFET; PERFORMANCE; SAMPLE PREPARATION; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON; SPATIAL RESOLUTION; SUBSTRATES; TWO-DIMENSIONAL CALCULATIONS

Citation Formats

Zhang, L., Koike, M., Takeno, S., and Hara, K. High-resolution and site-specific scanning spreading resistance microscopy and its applications to silicon devices. United States: N. p., 2012. Web. doi:10.1063/1.4766511.
Zhang, L., Koike, M., Takeno, S., & Hara, K. High-resolution and site-specific scanning spreading resistance microscopy and its applications to silicon devices. United States. doi:10.1063/1.4766511.
Zhang, L., Koike, M., Takeno, S., and Hara, K. Tue . "High-resolution and site-specific scanning spreading resistance microscopy and its applications to silicon devices". United States. doi:10.1063/1.4766511.
@article{osti_22075702,
title = {High-resolution and site-specific scanning spreading resistance microscopy and its applications to silicon devices},
author = {Zhang, L. and Koike, M. and Takeno, S. and Hara, K.},
abstractNote = {Due to the continuous reduction of the critical dimensions of semiconductor devices, it becomes very important to know the two dimensional (2D) doping profile for improving device performance. Scanning spreading resistance microscopy (SSRM) performed in high vacuum is a powerful technique for quantitative 2D-doping profiling, with high spatial resolution and wide dynamic range of carrier concentration, as well as capability of site-specific analysis for accurate position. In this paper, we review SSRM applications to source/drain engineering in Si devices and their correlation with device characteristics by demonstrating several case studies. Direct observation of (110)/(100) CMOSFETs clarified significant differences between both pFETs and nFETs on (110) and (100) silicon substrates, revealing 2D channeling effect of boron ion implantation in pFETs; as well as silicidation impact on junction leakage-current characteristics in nFETs. Furthermore, our sample-preparation breakthrough enables site-specific SSRM characterization within 60 nm ultra thin samples and therefore failure analysis of real SRAM devices, demonstrating the high potential of SSRM technology for further device scaling and for failure analysis.},
doi = {10.1063/1.4766511},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}