PbI2 Nanocrystal Growth by Atomic Layer Deposition from Pb(tmhd)2 and HI
Abstract
Atomic layer deposition (ALD) allows for fine control over the thickness, stoichiometry, and structural defects of materials. ALD provides a suitable route to deposit lead halides, which can further be converted to perovskites for photovoltaics, photoemission, and photodetection, among other applications. Deposition of lead halides by ALD has already begun to be explored; however, the precursors used in published processes are highly hazardous, require expensive fabrication processes, or contain impurities that can jeopardize the optoelectronic properties of metal halide perovskites after conversion. In this work, we deposited lead iodide (PbI2) by a facile ALD process involving only two readily accessible and low-cost precursors. PbI2 nanocrystals were grown on soda-lime glass (SLG), silicon dioxide support grids, and silicon wafer substrates and provided the groundwork for further investigation into developing lead halide perovskite processes by ALD. Further, the ALD-grown PbI2 was characterized by annular dark-field scanning transmission electron microscopy (ADF-STEM), atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), X-ray fluorescence (XRF), and X-ray photoemission spectroscopy (XPS), among other methods. This work presents the first step to synthesize lead halide perovskites with atomic control for applications such as interfacial layers in photovoltaics and for deposition in microcavities for lasing.
- Authors:
-
- Georgia Institute of Technology, Atlanta, GA (United States)
- Argonne National Lab. (ANL), Lemont, IL (United States). Advanced Photon Source (APS)
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS); Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Georgia Tech Graduate Assistance in Areas of National Need (GAANN); USDOD; Micron Foundation; Goizueta Foundation
- OSTI Identifier:
- 1901700
- Alternate Identifier(s):
- OSTI ID: 1888291
- Report Number(s):
- BNL-223402-2022-JAAM
Journal ID: ISSN 0897-4756; 173598
- Grant/Contract Number:
- AC02-06CH11357; SC0012704; ECCS-1542174
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Chemistry of Materials
- Additional Journal Information:
- Journal Volume: 34; Journal Issue: 6; Journal ID: ISSN 0897-4756
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Atomic layer deposition; Deposition; Nanocrystals; Precursors; Thin films
Citation Formats
Vagott, Jacob N., Bairley, Kathryn, Hidalgo, Juanita, Perini, Carlo A. R., Castro-Méndez, Andrés-Felipe, Lombardo, Sarah, Lai, Barry, Zhang, Lihua, Kisslinger, Kim, Kacher, Josh, and Correa-Baena, Juan-Pablo. PbI2 Nanocrystal Growth by Atomic Layer Deposition from Pb(tmhd)2 and HI. United States: N. p., 2022.
Web. doi:10.1021/acs.chemmater.1c03093.
Vagott, Jacob N., Bairley, Kathryn, Hidalgo, Juanita, Perini, Carlo A. R., Castro-Méndez, Andrés-Felipe, Lombardo, Sarah, Lai, Barry, Zhang, Lihua, Kisslinger, Kim, Kacher, Josh, & Correa-Baena, Juan-Pablo. PbI2 Nanocrystal Growth by Atomic Layer Deposition from Pb(tmhd)2 and HI. United States. https://doi.org/10.1021/acs.chemmater.1c03093
Vagott, Jacob N., Bairley, Kathryn, Hidalgo, Juanita, Perini, Carlo A. R., Castro-Méndez, Andrés-Felipe, Lombardo, Sarah, Lai, Barry, Zhang, Lihua, Kisslinger, Kim, Kacher, Josh, and Correa-Baena, Juan-Pablo. Tue .
"PbI2 Nanocrystal Growth by Atomic Layer Deposition from Pb(tmhd)2 and HI". United States. https://doi.org/10.1021/acs.chemmater.1c03093. https://www.osti.gov/servlets/purl/1901700.
@article{osti_1901700,
title = {PbI2 Nanocrystal Growth by Atomic Layer Deposition from Pb(tmhd)2 and HI},
author = {Vagott, Jacob N. and Bairley, Kathryn and Hidalgo, Juanita and Perini, Carlo A. R. and Castro-Méndez, Andrés-Felipe and Lombardo, Sarah and Lai, Barry and Zhang, Lihua and Kisslinger, Kim and Kacher, Josh and Correa-Baena, Juan-Pablo},
abstractNote = {Atomic layer deposition (ALD) allows for fine control over the thickness, stoichiometry, and structural defects of materials. ALD provides a suitable route to deposit lead halides, which can further be converted to perovskites for photovoltaics, photoemission, and photodetection, among other applications. Deposition of lead halides by ALD has already begun to be explored; however, the precursors used in published processes are highly hazardous, require expensive fabrication processes, or contain impurities that can jeopardize the optoelectronic properties of metal halide perovskites after conversion. In this work, we deposited lead iodide (PbI2) by a facile ALD process involving only two readily accessible and low-cost precursors. PbI2 nanocrystals were grown on soda-lime glass (SLG), silicon dioxide support grids, and silicon wafer substrates and provided the groundwork for further investigation into developing lead halide perovskite processes by ALD. Further, the ALD-grown PbI2 was characterized by annular dark-field scanning transmission electron microscopy (ADF-STEM), atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), X-ray fluorescence (XRF), and X-ray photoemission spectroscopy (XPS), among other methods. This work presents the first step to synthesize lead halide perovskites with atomic control for applications such as interfacial layers in photovoltaics and for deposition in microcavities for lasing.},
doi = {10.1021/acs.chemmater.1c03093},
journal = {Chemistry of Materials},
number = 6,
volume = 34,
place = {United States},
year = {Tue Mar 08 00:00:00 EST 2022},
month = {Tue Mar 08 00:00:00 EST 2022}
}
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