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Title: Hexagonal boron nitride: Epitaxial growth and device applications

Abstract

As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce h-BN epilayers with high hexagonal phase purity, UV transparency, and film stoichiometry by employing nitrogen-rich growth conditions. The quasi-2D nature of h-BN supports unusually strong optical transitions near the band edge and a large exciton binding energy on the order of 0.7 eV. Since the isotope of B-10 has a large capture cross-section for thermal neutrons, h-BN is an ideal material for the fabrication of solid-state neutron detectors for special nuclear materials detection, well and geothermal logging, and medical imaging applications. Freestanding B-10 enriched h-BN (h-10BN) epilayers with varying thicknesses up to 200 μm have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) as of this writing. By utilizing the conductivity anisotropy nature of h-BN, 1 cm2 lateral detectors fabricated from 100 μm thick h-10BN epilayers have demonstrated a detection efficiency of 59% for thermal neutrons, which is the highest on record among all solid-state neutronmore » detectors as of today. It was noted that high growth temperatures, long growth times and the use of sapphire substrate tend to incorporate oxygen related impurities into h-10BN epilayers, which strongly impacted the carrier mobility-lifetime (μτ) products and charge collection efficiencies of h-10BN neutron detectors. As the h-BN material technology further develops, improved carrier mobilities and μτ products will allow the fabrication of h-BN devices with enhanced performance.« less

Authors:
 [1];  [1];  [1];  [1];  [1]
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  1. Texas Tech Univ., Lubbock, TX (United States). Dept. of Electrical and Computer Engineering
Publication Date:
Research Org.:
Texas Tech Univ., Lubbock, TX (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1848323
Alternate Identifier(s):
OSTI ID: 1809473
Grant/Contract Number:  
AR0000964; AR0001257; FG02-09ER46552; NA0002927; ECCS-1402886; DMR-1206652; 2011-DN077-ARI048
Resource Type:
Accepted Manuscript
Journal Name:
Progress in Quantum Electronics
Additional Journal Information:
Journal Volume: 76; Journal Issue: C; Journal ID: ISSN 0079-6727
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Engineering; Physics; Optics

Citation Formats

Maity, A., Grenadier, S. J., Li, J., Lin, J. Y., and Jiang, H. X. Hexagonal boron nitride: Epitaxial growth and device applications. United States: N. p., 2020. Web. doi:10.1016/j.pquantelec.2020.100302.
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Maity, A., Grenadier, S. J., Li, J., Lin, J. Y., & Jiang, H. X. Hexagonal boron nitride: Epitaxial growth and device applications. United States. https://doi.org/10.1016/j.pquantelec.2020.100302
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Maity, A., Grenadier, S. J., Li, J., Lin, J. Y., and Jiang, H. X. Thu . "Hexagonal boron nitride: Epitaxial growth and device applications". United States. https://doi.org/10.1016/j.pquantelec.2020.100302. https://www.osti.gov/servlets/purl/1848323.
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@article{osti_1848323,
title = {Hexagonal boron nitride: Epitaxial growth and device applications},
author = {Maity, A. and Grenadier, S. J. and Li, J. and Lin, J. Y. and Jiang, H. X.},
abstractNote = {As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce h-BN epilayers with high hexagonal phase purity, UV transparency, and film stoichiometry by employing nitrogen-rich growth conditions. The quasi-2D nature of h-BN supports unusually strong optical transitions near the band edge and a large exciton binding energy on the order of 0.7 eV. Since the isotope of B-10 has a large capture cross-section for thermal neutrons, h-BN is an ideal material for the fabrication of solid-state neutron detectors for special nuclear materials detection, well and geothermal logging, and medical imaging applications. Freestanding B-10 enriched h-BN (h-10BN) epilayers with varying thicknesses up to 200 μm have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) as of this writing. By utilizing the conductivity anisotropy nature of h-BN, 1 cm2 lateral detectors fabricated from 100 μm thick h-10BN epilayers have demonstrated a detection efficiency of 59% for thermal neutrons, which is the highest on record among all solid-state neutron detectors as of today. It was noted that high growth temperatures, long growth times and the use of sapphire substrate tend to incorporate oxygen related impurities into h-10BN epilayers, which strongly impacted the carrier mobility-lifetime (μτ) products and charge collection efficiencies of h-10BN neutron detectors. As the h-BN material technology further develops, improved carrier mobilities and μτ products will allow the fabrication of h-BN devices with enhanced performance.},
doi = {10.1016/j.pquantelec.2020.100302},
journal = {Progress in Quantum Electronics},
number = C,
volume = 76,
place = {United States},
year = {Thu Nov 05 00:00:00 EST 2020},
month = {Thu Nov 05 00:00:00 EST 2020}
}
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  • DOI: 10.1016/j.nima.2008.03.002

Efficiency of composite boron nitride neutron detectors in comparison with helium-3 detectors
journal, March 2007

  • Uher, J.; Pospisil, S.; Linhart, V.
  • Applied Physics Letters, Vol. 90, Issue 12
  • DOI: 10.1063/1.2713869

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
journal, May 2006

  • Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
  • Nature, Vol. 441, Issue 7091, p. 325-328
  • DOI: 10.1038/nature04760

Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy
journal, September 2016

  • Doan, T. C.; Li, J.; Lin, J. Y.
  • Applied Physics Letters, Vol. 109, Issue 12
  • DOI: 10.1063/1.4963128

Improved High Efficiency Stacked Microstructured Neutron Detectors Backfilled With Nanoparticle $^{6}$LiF
journal, February 2012

  • Bellinger, S. L.; Fronk, R. G.; McNeil, W. J.
  • IEEE Transactions on Nuclear Science, Vol. 59, Issue 1
  • DOI: 10.1109/TNS.2011.2175749

Optical properties of AlN and GaN in elevated temperatures
journal, October 2004

  • Nam, K. B.; Li, J.; Lin, J. Y.
  • Applied Physics Letters, Vol. 85, Issue 16
  • DOI: 10.1063/1.1806545

First-principles study of intrinsic defect properties in hexagonal BN bilayer and monolayer
journal, May 2012

Hexagonal boron nitride and 6H-SiC heterostructures
journal, May 2013

  • Majety, S.; Li, J.; Zhao, W. P.
  • Applied Physics Letters, Vol. 102, Issue 21
  • DOI: 10.1063/1.4808365

Correlation between optical and electrical properties of Mg-doped AlN epilayers
journal, October 2006

  • Nakarmi, M. L.; Nepal, N.; Ugolini, C.
  • Applied Physics Letters, Vol. 89, Issue 15
  • DOI: 10.1063/1.2362582

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
journal, February 2012

Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers
journal, March 2003

  • Nam, K. B.; Li, J.; Nakarmi, M. L.
  • Applied Physics Letters, Vol. 82, Issue 11
  • DOI: 10.1063/1.1559659

Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers
journal, June 2014

  • Doan, T. C.; Majety, S.; Grenadier, S.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 748
  • DOI: 10.1016/j.nima.2014.02.031

Native point defects and impurities in hexagonal boron nitride
journal, June 2018

Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors
journal, June 2007

  • Dahal, R.; Al Tahtamouni, T. M.; Fan, Z. Y.
  • Applied Physics Letters, Vol. 90, Issue 26
  • DOI: 10.1063/1.2752126

Charge carrier transport properties in layer structured hexagonal boron nitride
journal, October 2014

  • Doan, T. C.; Li, J.; Lin, J. Y.
  • AIP Advances, Vol. 4, Issue 10
  • DOI: 10.1063/1.4898630

Origin of the significantly enhanced optical transitions in layered boron nitride
journal, October 2012

Comparison of CF4 and SF6 based plasmas for ECR etching of isotopically enriched 10boron films
journal, July 2009

  • Voss, L. F.; Reinhardt, C. E.; Graff, R. T.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 606, Issue 3
  • DOI: 10.1016/j.nima.2009.05.020

200nm deep ultraviolet photodetectors based on AlN
journal, November 2006

  • Li, J.; Fan, Z. Y.; Dahal, R.
  • Applied Physics Letters, Vol. 89, Issue 21
  • DOI: 10.1063/1.2397021

Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys
journal, February 2005

  • Nakarmi, M. L.; Kim, K. H.; Khizar, M.
  • Applied Physics Letters, Vol. 86, Issue 9
  • DOI: 10.1063/1.1879098

Unique optical properties of AlGaN alloys and related ultraviolet emitters
journal, June 2004

  • Nam, K. B.; Li, J.; Nakarmi, M. L.
  • Applied Physics Letters, Vol. 84, Issue 25
  • DOI: 10.1063/1.1765208

Study of defects in wide band gap semiconductors by electron paramagnetic resonance
journal, April 1993

Defect states of complexes involving a vacancy on the boron site in boronitrene
journal, December 2011

Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers
journal, August 2019

  • Grenadier, S.; Maity, A.; Li, J.
  • Applied Physics Letters, Vol. 115, Issue 7
  • DOI: 10.1063/1.5097984

Structural and electronic properties of h -BN
journal, September 2003

Fine Structure Constant Defines Visual Transparency of Graphene
journal, June 2008

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