Realization of highly efficient hexagonal boron nitride neutron detectors

Maity, A.; Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X.

doi:10.1063/1.4960522

Title: Realization of highly efficient hexagonal boron nitride neutron detectors

Journal Article · 15 August 2016 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.4960522 · OSTI ID:1330680

Maity, A. ^[1]; Doan, T. C. ^[2];

^[2];

^[2]

Texas Tech Univ., Lubbock, TX (United States); Texas Tech University
Texas Tech Univ., Lubbock, TX (United States)

Here, we report the achievement of highly efficient ¹⁰B enriched hexagonal boron nitride (h- ¹⁰BN) direct conversion neutron detectors. These detectors were realized from freestanding 4-in. diameter h- ¹⁰BN wafers 43 μm in thickness obtained from epitaxy growth and subsequent mechanical separation from sapphire substrates. Both sides of the film were subjected to ohmic contact deposition to form a simple vertical “photoconductor-type” detector. Transport measurements revealed excellent vertical transport properties including high electrical resistivity (>10¹³ Ω cm) and mobility-lifetime (μτ) products. A much larger μτ product for holes compared to that of electrons along the c-axis of h- BN was observed, implying that holes (electrons) behave like majority (minority) carriers in undoped h- BN. Exposure to thermal neutrons from a californium-252 (²⁵²Cf) source moderated by a high density polyethylene moderator reveals that 43 μm h- ¹⁰BN detectors possess 51.4% detection efficiency at a bias voltage of 400 V, which is the highest reported efficiency for any semiconductor-based neutron detector. The results point to the possibility of obtaining highly efficient, compact solid-state neutron detectors with high gamma rejection and low manufacturing and maintenance costs.

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Research Organization:: Texas Tech Univ., Lubbock, TX (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE); USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF); Department of Homeland Security (DHS)

Grant/Contract Number:: NA0002927

OSTI ID:: 1330680

Alternate ID(s):: OSTI ID: 1295951

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 109; ISSN APPLAB; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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