Title: Toward achieving cost-effective hexagonal BN semi-bulk crystals and BN neutron detectors via halide vapor phase epitaxy

Abstract

Presently, thermal neutron detectors fabricated from boron-10 enriched hexagonal boron nitride (h-10BN) ultrawide bandgap semiconductor grown by metal organic chemical vapor deposition (MOCVD) hold the record high detection efficiency among all solid-state detectors at 59%. To overcome the short comings of MOCVD growth, including inherently low growth rate and unavoidable impurities such as carbon in metal organic source, we demonstrate here the growth of natural hexagonal boron nitride (h-BN) semi-bulk wafers using halide vapor phase epitaxy (HVPE), which is an established technique for producing GaN semi-bulk crystals at a high growth rate. Electrical transport characterization results revealed that these HVPE grown materials possess an electrical resistivity of 1 × 1013 Ω cm, and a charge carrier mobility and lifetime product of 2 × 10−4 cm2/V s. Detectors fabricated from a 100 μm thick h-BN wafer have demonstrated a thermal neutron detection efficiency of 20%, corresponding to a charge collection efficiency of ∼60% at an operating voltage of 500 V. This initial demonstration opens the door for mass producing high efficiency h-BN semiconductor neutron detectors at a reduced cost, which could create unprecedented applications in nuclear energy, national security, nuclear waste monitoring and management, the health care industry, and material sciences.

Authors:

Alemoush, Z. ;

• Search DOE PAGES for author "Alemoush, Z."
• Search DOE PAGES for ORCID "0000-0002-9524-3632"

Hossain, N. K. ;

• Search DOE PAGES for author "Hossain, N. K."
• Search DOE PAGES for ORCID "0000-0003-2929-4789"

Tingsuwatit, A.; Almohammad, M. ;

• Search DOE PAGES for author "Almohammad, M."
• Search DOE PAGES for ORCID "0000-0002-7354-1815"

Li, J. ;

• Search DOE PAGES for author "Li, J."
• Search DOE PAGES for ORCID "0000-0003-2880-7933"

Lin, J. Y. ;

• Search DOE PAGES for author "Lin, J. Y."
• Search DOE PAGES for ORCID "0000-0003-1705-2635"

Jiang, H. X.

• Search DOE PAGES for author "Jiang, H. X."
• Search DOE PAGES for ORCID "0000-0001-9892-4292"

Publication Date:

Thu Jan 05 00:00:00 EST 2023

Sponsoring Org.:

USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:

1907993

Grant/Contract Number:  

AR0001257; AR0001552

Resource Type:

Publisher's Accepted Manuscript

Journal Name:

Applied Physics Letters

Additional Journal Information:

Journal Name: Applied Physics Letters Journal Volume: 122 Journal Issue: 1; Journal ID: ISSN 0003-6951

Publisher:

American Institute of Physics

Country of Publication:

United States

Language:

English