Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination
Abstract
Rapid interwell carrier transport is a key process for a uniform carrier distribution and reduced Auger recombination in multiple quantum well (MQW) light emitting devices. In this work, the interwell transport has been studied by time-resolved photoluminescence in In0.12Ga0.88N MQWs with InxGa1–xN (x = 0 - 0.06) and Al0.065Ga0.935N barriers. Only for the InGaN barriers the transport is efficient. Furthermore, introduction of In into the barriers is accompanied by an increase of the nonradiative recombination at QW interfaces. Still, even with the increased Shockley–Read–Hall recombination, structures with InGaN barriers might be advantageous for high power devices because of the reduced Auger recombination.
- Authors:
-
[1];
[2];
- AlbaNova Univ. Center, Stockholm (Sweden)
- Univ. of California, Santa Barbara, CA (United States)
- Publication Date:
- Research Org.:
- Univ. of California, Santa Barbara, CA (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office; Swedish Energy Agency
- OSTI Identifier:
- 1740011
- Grant/Contract Number:
- EE0008204; 45390-1
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Express
- Additional Journal Information:
- Journal Volume: 13; Journal Issue: 12; Journal ID: ISSN 1882-0778
- Publisher:
- Japan Society of Applied Physics
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Yapparov, Rinat, Lynsky, Cheyenne, Nakamura, Shuji, Speck, James S., and Marcinkevičius, Saulius. Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination. United States: N. p., 2020.
Web. doi:10.35848/1882-0786/abc856.
Yapparov, Rinat, Lynsky, Cheyenne, Nakamura, Shuji, Speck, James S., & Marcinkevičius, Saulius. Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination. United States. https://doi.org/10.35848/1882-0786/abc856
Yapparov, Rinat, Lynsky, Cheyenne, Nakamura, Shuji, Speck, James S., and Marcinkevičius, Saulius. Fri .
"Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination". United States. https://doi.org/10.35848/1882-0786/abc856. https://www.osti.gov/servlets/purl/1740011.
@article{osti_1740011,
title = {Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination},
author = {Yapparov, Rinat and Lynsky, Cheyenne and Nakamura, Shuji and Speck, James S. and Marcinkevičius, Saulius},
abstractNote = {Rapid interwell carrier transport is a key process for a uniform carrier distribution and reduced Auger recombination in multiple quantum well (MQW) light emitting devices. In this work, the interwell transport has been studied by time-resolved photoluminescence in In0.12Ga0.88N MQWs with InxGa1–xN (x = 0 - 0.06) and Al0.065Ga0.935N barriers. Only for the InGaN barriers the transport is efficient. Furthermore, introduction of In into the barriers is accompanied by an increase of the nonradiative recombination at QW interfaces. Still, even with the increased Shockley–Read–Hall recombination, structures with InGaN barriers might be advantageous for high power devices because of the reduced Auger recombination.},
doi = {10.35848/1882-0786/abc856},
journal = {Applied Physics Express},
number = 12,
volume = 13,
place = {United States},
year = {Fri Nov 20 00:00:00 EST 2020},
month = {Fri Nov 20 00:00:00 EST 2020}
}
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