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Title: Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport

Authors:
ORCiD logo; ORCiD logo; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1600069
Grant/Contract Number:  
[EE0008204]
Resource Type:
Published Article
Journal Name:
Physical Review B
Additional Journal Information:
[Journal Name: Physical Review B Journal Volume: 101 Journal Issue: 7]; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, and Speck, James S. Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport. United States: N. p., 2020. Web. doi:10.1103/PhysRevB.101.075305.
Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, & Speck, James S. Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport. United States. doi:10.1103/PhysRevB.101.075305.
Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, and Speck, James S. Tue . "Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport". United States. doi:10.1103/PhysRevB.101.075305.
@article{osti_1600069,
title = {Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport},
author = {Marcinkevičius, Saulius and Yapparov, Rinat and Kuritzky, Leah Y. and Wu, Yuh-Renn and Nakamura, Shuji and Speck, James S.},
abstractNote = {},
doi = {10.1103/PhysRevB.101.075305},
journal = {Physical Review B},
number = [7],
volume = [101],
place = {United States},
year = {2020},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.101.075305

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