Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport

doi:10.1103/PhysRevB.101.075305

Title: Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport

Authors:

;

; Kuritzky, Leah Y.; Wu, Yuh-Renn; Nakamura, Shuji; Speck, James S.

Publication Date:: 2020-02-18

Sponsoring Org.:: USDOE

OSTI Identifier:: 1600069

Grant/Contract Number:: [EE0008204]

Resource Type:: Published Article

Journal Name:: Physical Review B

Additional Journal Information:: [Journal Name: Physical Review B Journal Volume: 101 Journal Issue: 7]; Journal ID: ISSN 2469-9950

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, and Speck, James S. Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport.  United States: N. p., 2020. 
        Web.  doi:10.1103/PhysRevB.101.075305.

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                    Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, & Speck, James S. Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport.  United States.  doi:10.1103/PhysRevB.101.075305.

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                    Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, and Speck, James S. Tue .  
        "Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport".  United States.  doi:10.1103/PhysRevB.101.075305.

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@article{osti_1600069,

  title        = {Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport},

  author       = {Marcinkevičius, Saulius and Yapparov, Rinat and Kuritzky, Leah Y. and Wu, Yuh-Renn and Nakamura, Shuji and Speck, James S.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.101.075305},

  journal      = {Physical Review B},

  number       = [7],

  volume       = [101],

  place        = {United States},

  year         = {2020},

  month        = {2}

}

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DOI: 10.1103/PhysRevB.101.075305

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Works referenced in this record:

Optical characterization of III-nitrides
journal, May 2002

Monemar, B.; Paskov, P. P.; Paskova, T.
Materials Science and Engineering: B, Vol. 93, Issue 1-3
DOI: 10.1016/S0921-5107(02)00006-5

Photoexcited carrier recombination in wide m -plane InGaN/GaN quantum wells
journal, September 2013

Marcinkevičius, S.; Kelchner, K. M.; Kuritzky, L. Y.
Applied Physics Letters, Vol. 103, Issue 11
DOI: 10.1063/1.4820839

Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures
journal, February 2002

Knap, W.; Borovitskaya, E.; Shur, M. S.
Applied Physics Letters, Vol. 80, Issue 7
DOI: 10.1063/1.1448401

Application of femtosecond-excitation correlation to the study of emission dynamics in hexagonal GaN
journal, November 1998

Pau, S.; Kuhl, J.; Khan, M. A.
Physical Review B, Vol. 58, Issue 19
DOI: 10.1103/PhysRevB.58.12916

p ‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg
journal, January 1994

Rubin, M.; Newman, N.; Chan, J. S.
Applied Physics Letters, Vol. 64, Issue 1
DOI: 10.1063/1.110870

Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films
journal, July 1999

Kornitzer, K.; Ebner, T.; Thonke, K.
Physical Review B, Vol. 60, Issue 3
DOI: 10.1103/PhysRevB.60.1471

Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells: Recombination in non- and semipolar GaInN/GaN quantum wells
journal, August 2015

Langer, Torsten; Klisch, Manuela; Alexej Ketzer, Fedor
physica status solidi (b), Vol. 253, Issue 1
DOI: 10.1002/pssb.201552353

Field-dependent carrier decay dynamics in strained ${In}_{x} {Ga}_{1 - x} N / G a N$ quantum wells
journal, July 2002

Jho, Y. D.; Yahng, J. S.; Oh, E.
Physical Review B, Vol. 66, Issue 3
DOI: 10.1103/PhysRevB.66.035334

Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence
journal, August 2013

Binder, M.; Nirschl, A.; Zeisel, R.
Applied Physics Letters, Vol. 103, Issue 7
DOI: 10.1063/1.4818761

Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes
journal, September 2011

Sizov, D. S.; Bhat, R.; Zakharian, A.
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 17, Issue 5
DOI: 10.1109/JSTQE.2011.2116770

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency
journal, August 2010

Ni, X.; Li, X.; Lee, J.
Superlattices and Microstructures, Vol. 48, Issue 2
DOI: 10.1016/j.spmi.2010.05.009

Interwell carrier transport in InGaN/(In)GaN multiple quantum wells
journal, April 2019

Marcinkevičius, Saulius; Yapparov, Rinat; Kuritzky, Leah Y.
Applied Physics Letters, Vol. 114, Issue 15
DOI: 10.1063/1.5092585

Ultrafast Hot Carrier Dynamics in GaN and Its Impact on the Efficiency Droop
journal, July 2017

Jhalani, Vatsal A.; Zhou, Jin-Jian; Bernardi, Marco
Nano Letters, Vol. 17, Issue 8
DOI: 10.1021/acs.nanolett.7b02212

Effect of polarization fields on transport properties in AlGaN/GaN heterostructures
journal, January 2001

Hsu, L.; Walukiewicz, W.
Journal of Applied Physics, Vol. 89, Issue 3
DOI: 10.1063/1.1339858

Momentum matrix element and conduction band nonparabolicity in wurtzite GaN
journal, April 2005

Shokhovets, S.; Gobsch, G.; Ambacher, O.
Applied Physics Letters, Vol. 86, Issue 16
DOI: 10.1063/1.1906313

Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells
journal, November 2015

Ivanov, R.; Marcinkevičius, S.; Zhao, Y.
Applied Physics Letters, Vol. 107, Issue 21
DOI: 10.1063/1.4936386

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells
journal, March 2017

Shahmohammadi, M.; Liu, W.; Rossbach, G.
Physical Review B, Vol. 95, Issue 12
DOI: 10.1103/PhysRevB.95.125314

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
journal, February 2008

David, Aurélien; Grundmann, Michael J.; Kaeding, John F.
Applied Physics Letters, Vol. 92, Issue 5
DOI: 10.1063/1.2839305

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates
journal, October 2013

Roberts, A. T.; Mohanta, A.; Everitt, H. O.
Applied Physics Letters, Vol. 103, Issue 18
DOI: 10.1063/1.4827536

Large- $k$ exciton dynamics in GaN epilayers: Nonthermal and thermal regimes
journal, February 2013

Vinattieri, Anna; Bogani, Franco; Cavigli, Lucia
Physical Review B, Vol. 87, Issue 7
DOI: 10.1103/PhysRevB.87.075202

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
journal, February 2008

Rinke, Patrick; Winkelnkemper, M.; Qteish, A.
Physical Review B, Vol. 77, Issue 7
DOI: 10.1103/PhysRevB.77.075202

Crossover between surface field and photo-Dember effect induced terahertz emission
journal, April 2011

Reklaitis, Antanas
Journal of Applied Physics, Vol. 109, Issue 8
DOI: 10.1063/1.3580331

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
journal, June 2012

Tiras, Engin; Celik, Ozlem; Mutlu, Selman
Superlattices and Microstructures, Vol. 51, Issue 6
DOI: 10.1016/j.spmi.2012.03.029

Measurement of the hot electron mean free path and the momentum relaxation rate in GaN
journal, December 2014

Suntrup, Donald J.; Gupta, Geetak; Li, Haoran
Applied Physics Letters, Vol. 105, Issue 26
DOI: 10.1063/1.4905367

Carrier mobility model for GaN
journal, January 2003

Mnatsakanov, Tigran T.; Levinshtein, Michael E.; Pomortseva, Lubov I.
Solid-State Electronics, Vol. 47, Issue 1
DOI: 10.1016/S0038-1101(02)00256-3

Cooling dynamics of excitons in GaN
journal, March 1999

Hägele, D.; Zimmermann, R.; Oestreich, M.
Physical Review B, Vol. 59, Issue 12
DOI: 10.1103/PhysRevB.59.R7797

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Full Text Available

Similar Records

Title: Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport

Citation Formats

Optical characterization of III-nitrides journal, May 2002

Photoexcited carrier recombination in wide m -plane InGaN/GaN quantum wells journal, September 2013

Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures journal, February 2002

Application of femtosecond-excitation correlation to the study of emission dynamics in hexagonal GaN journal, November 1998

p ‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg journal, January 1994

Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films journal, July 1999

Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells: Recombination in non- and semipolar GaInN/GaN quantum wells journal, August 2015

Field-dependent carrier decay dynamics in strained In x Ga 1 − x N / G a N quantum wells journal, July 2002

Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence journal, August 2013

Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes journal, September 2011

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency journal, August 2010

Interwell carrier transport in InGaN/(In)GaN multiple quantum wells journal, April 2019

Ultrafast Hot Carrier Dynamics in GaN and Its Impact on the Efficiency Droop journal, July 2017

Effect of polarization fields on transport properties in AlGaN/GaN heterostructures journal, January 2001

Momentum matrix element and conduction band nonparabolicity in wurtzite GaN journal, April 2005

Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells journal, November 2015

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells journal, March 2017

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes journal, February 2008

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates journal, October 2013

Large- k exciton dynamics in GaN epilayers: Nonthermal and thermal regimes journal, February 2013

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN journal, February 2008

Crossover between surface field and photo-Dember effect induced terahertz emission journal, April 2011

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures journal, June 2012

Measurement of the hot electron mean free path and the momentum relaxation rate in GaN journal, December 2014

Carrier mobility model for GaN journal, January 2003

Cooling dynamics of excitons in GaN journal, March 1999

Optical characterization of III-nitrides
journal, May 2002

Photoexcited carrier recombination in wide m -plane InGaN/GaN quantum wells
journal, September 2013

Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures
journal, February 2002

Application of femtosecond-excitation correlation to the study of emission dynamics in hexagonal GaN
journal, November 1998

p ‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg
journal, January 1994

Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films
journal, July 1999

Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells: Recombination in non- and semipolar GaInN/GaN quantum wells
journal, August 2015

Field-dependent carrier decay dynamics in strained ${In}_{x} {Ga}_{1 - x} N / G a N$ quantum wells
journal, July 2002

Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence
journal, August 2013

Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes
journal, September 2011

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency
journal, August 2010

Interwell carrier transport in InGaN/(In)GaN multiple quantum wells
journal, April 2019

Ultrafast Hot Carrier Dynamics in GaN and Its Impact on the Efficiency Droop
journal, July 2017

Effect of polarization fields on transport properties in AlGaN/GaN heterostructures
journal, January 2001

Momentum matrix element and conduction band nonparabolicity in wurtzite GaN
journal, April 2005

Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells
journal, November 2015

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells
journal, March 2017

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
journal, February 2008

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates
journal, October 2013

Large- $k$ exciton dynamics in GaN epilayers: Nonthermal and thermal regimes
journal, February 2013

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
journal, February 2008

Crossover between surface field and photo-Dember effect induced terahertz emission
journal, April 2011

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
journal, June 2012

Measurement of the hot electron mean free path and the momentum relaxation rate in GaN
journal, December 2014

Carrier mobility model for GaN
journal, January 2003

Cooling dynamics of excitons in GaN
journal, March 1999