Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport
Abstract
Carrier transport across polar $$\mathcal{n}$$-type InGaN/GaN multiple quantum wells (MQWs) has been studied by time-resolved photoluminescence (PL) using an optical marker technique. Efficiency of the hole transfer into the marker well experienced a nonmonotonous temperature dependence. First, as the temperature was lowered below room temperature, the number of transferred holes decreased because of the decreased efficiency of the thermionic emission. However, when the temperature was lowered below ~80 K, the number of transferred holes experienced a significant rise. In addition, the low-temperature hole transport across the MQW structure was very fast, <3 ps. These features indicate that the low-temperature hole transport across the MQWs is ballistic or quasiballistic. Comparison of PL data for structures with different MQW parameters suggests that at low temperatures the hole mean-free path is about 10 nm. Probably, hole transport via light hole and split-off valence bands contributes to this high value.
- Publication Date:
- Research Org.:
- Univ. of California, Santa Barbara, CA (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE); Swedish Energy Agency; Simons Foundation
- OSTI Identifier:
- 1600069
- Alternate Identifier(s):
- OSTI ID: 1799453
- Grant/Contract Number:
- EE0008204; 45390–1; 601952
- Resource Type:
- Published Article
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Name: Physical Review B Journal Volume: 101 Journal Issue: 7; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Materials Science; Physics
Citation Formats
Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, and Speck, James S. Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport. United States: N. p., 2020.
Web. doi:10.1103/PhysRevB.101.075305.
Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, & Speck, James S. Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport. United States. https://doi.org/10.1103/PhysRevB.101.075305
Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, and Speck, James S. Tue .
"Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport". United States. https://doi.org/10.1103/PhysRevB.101.075305.
@article{osti_1600069,
title = {Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport},
author = {Marcinkevičius, Saulius and Yapparov, Rinat and Kuritzky, Leah Y. and Wu, Yuh-Renn and Nakamura, Shuji and Speck, James S.},
abstractNote = {Carrier transport across polar $\mathcal{n}$-type InGaN/GaN multiple quantum wells (MQWs) has been studied by time-resolved photoluminescence (PL) using an optical marker technique. Efficiency of the hole transfer into the marker well experienced a nonmonotonous temperature dependence. First, as the temperature was lowered below room temperature, the number of transferred holes decreased because of the decreased efficiency of the thermionic emission. However, when the temperature was lowered below ~80 K, the number of transferred holes experienced a significant rise. In addition, the low-temperature hole transport across the MQW structure was very fast, <3 ps. These features indicate that the low-temperature hole transport across the MQWs is ballistic or quasiballistic. Comparison of PL data for structures with different MQW parameters suggests that at low temperatures the hole mean-free path is about 10 nm. Probably, hole transport via light hole and split-off valence bands contributes to this high value.},
doi = {10.1103/PhysRevB.101.075305},
journal = {Physical Review B},
number = 7,
volume = 101,
place = {United States},
year = {2020},
month = {2}
}
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https://doi.org/10.1103/PhysRevB.101.075305
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