DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport

Abstract

Carrier transport across polar $$\mathcal{n}$$-type InGaN/GaN multiple quantum wells (MQWs) has been studied by time-resolved photoluminescence (PL) using an optical marker technique. Efficiency of the hole transfer into the marker well experienced a nonmonotonous temperature dependence. First, as the temperature was lowered below room temperature, the number of transferred holes decreased because of the decreased efficiency of the thermionic emission. However, when the temperature was lowered below ~80 K, the number of transferred holes experienced a significant rise. In addition, the low-temperature hole transport across the MQW structure was very fast, <3 ps. These features indicate that the low-temperature hole transport across the MQWs is ballistic or quasiballistic. Comparison of PL data for structures with different MQW parameters suggests that at low temperatures the hole mean-free path is about 10 nm. Probably, hole transport via light hole and split-off valence bands contributes to this high value.

Authors:
ORCiD logo; ORCiD logo; ; ; ;
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); Swedish Energy Agency; Simons Foundation
OSTI Identifier:
1600069
Alternate Identifier(s):
OSTI ID: 1799453
Grant/Contract Number:  
EE0008204; 45390–1; 601952
Resource Type:
Published Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 101 Journal Issue: 7; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Materials Science; Physics

Citation Formats

Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, and Speck, James S. Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport. United States: N. p., 2020. Web. doi:10.1103/PhysRevB.101.075305.
Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, & Speck, James S. Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport. United States. https://doi.org/10.1103/PhysRevB.101.075305
Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, and Speck, James S. Tue . "Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport". United States. https://doi.org/10.1103/PhysRevB.101.075305.
@article{osti_1600069,
title = {Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport},
author = {Marcinkevičius, Saulius and Yapparov, Rinat and Kuritzky, Leah Y. and Wu, Yuh-Renn and Nakamura, Shuji and Speck, James S.},
abstractNote = {Carrier transport across polar $\mathcal{n}$-type InGaN/GaN multiple quantum wells (MQWs) has been studied by time-resolved photoluminescence (PL) using an optical marker technique. Efficiency of the hole transfer into the marker well experienced a nonmonotonous temperature dependence. First, as the temperature was lowered below room temperature, the number of transferred holes decreased because of the decreased efficiency of the thermionic emission. However, when the temperature was lowered below ~80 K, the number of transferred holes experienced a significant rise. In addition, the low-temperature hole transport across the MQW structure was very fast, <3 ps. These features indicate that the low-temperature hole transport across the MQWs is ballistic or quasiballistic. Comparison of PL data for structures with different MQW parameters suggests that at low temperatures the hole mean-free path is about 10 nm. Probably, hole transport via light hole and split-off valence bands contributes to this high value.},
doi = {10.1103/PhysRevB.101.075305},
journal = {Physical Review B},
number = 7,
volume = 101,
place = {United States},
year = {2020},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.101.075305

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Optical characterization of III-nitrides
journal, May 2002


Photoexcited carrier recombination in wide m -plane InGaN/GaN quantum wells
journal, September 2013

  • Marcinkevičius, S.; Kelchner, K. M.; Kuritzky, L. Y.
  • Applied Physics Letters, Vol. 103, Issue 11
  • DOI: 10.1063/1.4820839

Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures
journal, February 2002

  • Knap, W.; Borovitskaya, E.; Shur, M. S.
  • Applied Physics Letters, Vol. 80, Issue 7
  • DOI: 10.1063/1.1448401

Application of femtosecond-excitation correlation to the study of emission dynamics in hexagonal GaN
journal, November 1998


p ‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg
journal, January 1994

  • Rubin, M.; Newman, N.; Chan, J. S.
  • Applied Physics Letters, Vol. 64, Issue 1
  • DOI: 10.1063/1.110870

Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films
journal, July 1999


Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells: Recombination in non- and semipolar GaInN/GaN quantum wells
journal, August 2015

  • Langer, Torsten; Klisch, Manuela; Alexej Ketzer, Fedor
  • physica status solidi (b), Vol. 253, Issue 1
  • DOI: 10.1002/pssb.201552353

Field-dependent carrier decay dynamics in strained In x Ga 1 x N / G a N quantum wells
journal, July 2002


Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes
journal, September 2011

  • Sizov, D. S.; Bhat, R.; Zakharian, A.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 17, Issue 5
  • DOI: 10.1109/JSTQE.2011.2116770

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency
journal, August 2010


Interwell carrier transport in InGaN/(In)GaN multiple quantum wells
journal, April 2019

  • Marcinkevičius, Saulius; Yapparov, Rinat; Kuritzky, Leah Y.
  • Applied Physics Letters, Vol. 114, Issue 15
  • DOI: 10.1063/1.5092585

Ultrafast Hot Carrier Dynamics in GaN and Its Impact on the Efficiency Droop
journal, July 2017


Effect of polarization fields on transport properties in AlGaN/GaN heterostructures
journal, January 2001

  • Hsu, L.; Walukiewicz, W.
  • Journal of Applied Physics, Vol. 89, Issue 3
  • DOI: 10.1063/1.1339858

Momentum matrix element and conduction band nonparabolicity in wurtzite GaN
journal, April 2005

  • Shokhovets, S.; Gobsch, G.; Ambacher, O.
  • Applied Physics Letters, Vol. 86, Issue 16
  • DOI: 10.1063/1.1906313

Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells
journal, November 2015

  • Ivanov, R.; Marcinkevičius, S.; Zhao, Y.
  • Applied Physics Letters, Vol. 107, Issue 21
  • DOI: 10.1063/1.4936386

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells
journal, March 2017


Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
journal, February 2008

  • David, Aurélien; Grundmann, Michael J.; Kaeding, John F.
  • Applied Physics Letters, Vol. 92, Issue 5
  • DOI: 10.1063/1.2839305

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates
journal, October 2013

  • Roberts, A. T.; Mohanta, A.; Everitt, H. O.
  • Applied Physics Letters, Vol. 103, Issue 18
  • DOI: 10.1063/1.4827536

Large- k exciton dynamics in GaN epilayers: Nonthermal and thermal regimes
journal, February 2013


Crossover between surface field and photo-Dember effect induced terahertz emission
journal, April 2011

  • Reklaitis, Antanas
  • Journal of Applied Physics, Vol. 109, Issue 8
  • DOI: 10.1063/1.3580331

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
journal, June 2012


Measurement of the hot electron mean free path and the momentum relaxation rate in GaN
journal, December 2014

  • Suntrup, Donald J.; Gupta, Geetak; Li, Haoran
  • Applied Physics Letters, Vol. 105, Issue 26
  • DOI: 10.1063/1.4905367

Carrier mobility model for GaN
journal, January 2003

  • Mnatsakanov, Tigran T.; Levinshtein, Michael E.; Pomortseva, Lubov I.
  • Solid-State Electronics, Vol. 47, Issue 1
  • DOI: 10.1016/S0038-1101(02)00256-3

Cooling dynamics of excitons in GaN
journal, March 1999