Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1600069
- Grant/Contract Number:
- EE0008204
- Resource Type:
- Published Article
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Name: Physical Review B Journal Volume: 101 Journal Issue: 7; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, and Speck, James S. Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport. United States: N. p., 2020.
Web. doi:10.1103/PhysRevB.101.075305.
Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, & Speck, James S. Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport. United States. doi:https://doi.org/10.1103/PhysRevB.101.075305
Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, and Speck, James S. Tue .
"Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport". United States. doi:https://doi.org/10.1103/PhysRevB.101.075305.
@article{osti_1600069,
title = {Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport},
author = {Marcinkevičius, Saulius and Yapparov, Rinat and Kuritzky, Leah Y. and Wu, Yuh-Renn and Nakamura, Shuji and Speck, James S.},
abstractNote = {},
doi = {10.1103/PhysRevB.101.075305},
journal = {Physical Review B},
number = 7,
volume = 101,
place = {United States},
year = {2020},
month = {2}
}
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DOI: https://doi.org/10.1103/PhysRevB.101.075305
DOI: https://doi.org/10.1103/PhysRevB.101.075305
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