Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport

Marcinkevičius, Saulius; Yapparov, Rinat; Kuritzky, Leah Y.; Wu, Yuh-Renn; Nakamura, Shuji; Speck, James S.

doi:10.1103/PhysRevB.101.075305

Title: Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport

Journal Article · 18 February 2020 · Physical Review B

DOI: https://doi.org/10.1103/PhysRevB.101.075305 · OSTI ID:1600069

;

; Kuritzky, Leah Y.; Wu, Yuh-Renn; Nakamura, Shuji; Speck, James S.

Not Available

View Journal Article

Cite

Export

Save

Sponsoring Organization:: USDOE

Grant/Contract Number:: EE0008204

OSTI ID:: 1600069

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 7 Vol. 101; ISSN 2469-9950; ISSN PRBMDO

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (26)

Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells: Recombination in non- and semipolar GaInN/GaN quantum wells Langer, Torsten; Klisch, Manuela; Alexej Ketzer, Fedor physica status solidi (b), Vol. 253, Issue 1 https://doi.org/10.1002/pssb.201552353	journal	August 2015
Carrier mobility model for GaN Mnatsakanov, Tigran T.; Levinshtein, Michael E.; Pomortseva, Lubov I. Solid-State Electronics, Vol. 47, Issue 1 https://doi.org/10.1016/S0038-1101(02)00256-3	journal	January 2003
Optical characterization of III-nitrides Monemar, B.; Paskov, P. P.; Paskova, T. Materials Science and Engineering: B, Vol. 93, Issue 1-3 https://doi.org/10.1016/S0921-5107(02)00006-5	journal	May 2002
Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency Ni, X.; Li, X.; Lee, J. Superlattices and Microstructures, Vol. 48, Issue 2 https://doi.org/10.1016/j.spmi.2010.05.009	journal	August 2010
Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures Tiras, Engin; Celik, Ozlem; Mutlu, Selman Superlattices and Microstructures, Vol. 51, Issue 6 https://doi.org/10.1016/j.spmi.2012.03.029	journal	June 2012
Ultrafast Hot Carrier Dynamics in GaN and Its Impact on the Efficiency Droop Jhalani, Vatsal A.; Zhou, Jin-Jian; Bernardi, Marco Nano Letters, Vol. 17, Issue 8 https://doi.org/10.1021/acs.nanolett.7b02212	journal	July 2017
p ‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg Rubin, M.; Newman, N.; Chan, J. S. Applied Physics Letters, Vol. 64, Issue 1 https://doi.org/10.1063/1.110870	journal	January 1994
Effect of polarization fields on transport properties in AlGaN/GaN heterostructures Hsu, L.; Walukiewicz, W. Journal of Applied Physics, Vol. 89, Issue 3 https://doi.org/10.1063/1.1339858	journal	January 2001
Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures Knap, W.; Borovitskaya, E.; Shur, M. S. Applied Physics Letters, Vol. 80, Issue 7 https://doi.org/10.1063/1.1448401	journal	February 2002
Momentum matrix element and conduction band nonparabolicity in wurtzite GaN Shokhovets, S.; Gobsch, G.; Ambacher, O. Applied Physics Letters, Vol. 86, Issue 16 https://doi.org/10.1063/1.1906313	journal	April 2005
Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes David, Aurélien; Grundmann, Michael J.; Kaeding, John F. Applied Physics Letters, Vol. 92, Issue 5 https://doi.org/10.1063/1.2839305	journal	February 2008
Crossover between surface field and photo-Dember effect induced terahertz emission Reklaitis, Antanas Journal of Applied Physics, Vol. 109, Issue 8 https://doi.org/10.1063/1.3580331	journal	April 2011
Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence Binder, M.; Nirschl, A.; Zeisel, R. Applied Physics Letters, Vol. 103, Issue 7 https://doi.org/10.1063/1.4818761	journal	August 2013
Photoexcited carrier recombination in wide m -plane InGaN/GaN quantum wells Marcinkevičius, S.; Kelchner, K. M.; Kuritzky, L. Y. Applied Physics Letters, Vol. 103, Issue 11 https://doi.org/10.1063/1.4820839	journal	September 2013
Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates Roberts, A. T.; Mohanta, A.; Everitt, H. O. Applied Physics Letters, Vol. 103, Issue 18 https://doi.org/10.1063/1.4827536	journal	October 2013
Measurement of the hot electron mean free path and the momentum relaxation rate in GaN Suntrup, Donald J.; Gupta, Geetak; Li, Haoran Applied Physics Letters, Vol. 105, Issue 26 https://doi.org/10.1063/1.4905367	journal	December 2014
Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells Ivanov, R.; Marcinkevičius, S.; Zhao, Y. Applied Physics Letters, Vol. 107, Issue 21 https://doi.org/10.1063/1.4936386	journal	November 2015
Interwell carrier transport in InGaN/(In)GaN multiple quantum wells Marcinkevičius, Saulius; Yapparov, Rinat; Kuritzky, Leah Y. Applied Physics Letters, Vol. 114, Issue 15 https://doi.org/10.1063/1.5092585	journal	April 2019
Application of femtosecond-excitation correlation to the study of emission dynamics in hexagonal GaN Pau, S.; Kuhl, J.; Khan, M. A. Physical Review B, Vol. 58, Issue 19 https://doi.org/10.1103/PhysRevB.58.12916	journal	November 1998
Cooling dynamics of excitons in GaN Hägele, D.; Zimmermann, R.; Oestreich, M. Physical Review B, Vol. 59, Issue 12 https://doi.org/10.1103/PhysRevB.59.R7797	journal	March 1999
Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films Kornitzer, K.; Ebner, T.; Thonke, K. Physical Review B, Vol. 60, Issue 3 https://doi.org/10.1103/PhysRevB.60.1471	journal	July 1999
Field-dependent carrier decay dynamics in strained In x Ga 1 − x N / G a N quantum wells Jho, Y. D.; Yahng, J. S.; Oh, E. Physical Review B, Vol. 66, Issue 3 https://doi.org/10.1103/PhysRevB.66.035334	journal	July 2002
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN Rinke, Patrick; Winkelnkemper, M.; Qteish, A. Physical Review B, Vol. 77, Issue 7 https://doi.org/10.1103/PhysRevB.77.075202	journal	February 2008
Large- k exciton dynamics in GaN epilayers: Nonthermal and thermal regimes Vinattieri, Anna; Bogani, Franco; Cavigli, Lucia Physical Review B, Vol. 87, Issue 7 https://doi.org/10.1103/PhysRevB.87.075202	journal	February 2013
Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells Shahmohammadi, M.; Liu, W.; Rossbach, G. Physical Review B, Vol. 95, Issue 12 https://doi.org/10.1103/PhysRevB.95.125314	journal	March 2017
Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes Sizov, D. S.; Bhat, R.; Zakharian, A. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 17, Issue 5 https://doi.org/10.1109/JSTQE.2011.2116770	journal	September 2011

Similar Records

Interwell carrier transport in InGaN/(In)GaN multiple quantum wells

Journal Article · 2019 · Applied Physics Letters · OSTI ID:1614094

Marcinkevičius, Saulius; Yapparov, Rinat; Kuritzky, Leah Y.; +4 more

Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination

Journal Article · 2020 · Applied Physics Express · OSTI ID:1740011

Yapparov, Rinat; Lynsky, Cheyenne; Nakamura, Shuji; +2 more

Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells

Journal Article · 2020 · Journal of Applied Physics · OSTI ID:1740012

Yapparov, Rinat; Chow, Yi Chao; Lynsky, Cheyenne; +4 more

Title: Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport

Citation Formats

References (26)

Similar Records

Related Subjects