Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells
Abstract
Time- and spectrally-resolved scanning near-field optical microscopy was applied to study spatial variations of photoluminescence (PL) spectra and carrier dynamics in polar InGaN/GaN single quantum wells (QWs) emitting from 410 nm to 570 nm. The main attention was devoted to variations of PL properties and carrier dynamics around V-defects. The PL intensity, peak wavelength, and linewidth, as well as the radiative and nonradiative recombination times, were found to be different in V-defect-rich and defect-free regions. The radiative lifetime close to the defects was longer up to several times, which is attributed to an increased electron and hole wave function separation in the QW plane. PL decay times, measured using excitation and collection through the near-field probe, were one to two orders of magnitude shorter than PL decay times measured in the far field. This shows that the near-field PL decay and the integrated PL intensity are primarily determined by the carrier out-diffusion from under the probe. Only in the immediate vicinity of the V-defects, the near-field PL decays due to the nonradiative recombination at dislocations. The area of such enhanced nonradiative recombination is limited to just a few percent of the total QW area. This shows that recombination via dislocationsmore »
- Authors:
-
- AlbaNova Univ. Center, Stockholm (Sweden)
- Univ. of California, Santa Barbara, CA (United States)
- Publication Date:
- Research Org.:
- Univ. of California, Santa Barbara, CA (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office; Swedish Research Council (SRC); Swedish Energy Agency; Simons Foundation
- OSTI Identifier:
- 1740012
- Grant/Contract Number:
- EE0008204; 45390-1; 2018-04783; 601952
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 128; Journal Issue: 22; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Scanning probe microscopy; Photoexcitations; Emission spectroscopy; Quantum wells; Light emitting diodes; Photoluminescence spectroscopy
Citation Formats
Yapparov, Rinat, Chow, Yi Chao, Lynsky, Cheyenne, Wu, Feng, Nakamura, Shuji, Speck, James S., and Marcinkevičius, Saulius. Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells. United States: N. p., 2020.
Web. doi:10.1063/5.0031863.
Yapparov, Rinat, Chow, Yi Chao, Lynsky, Cheyenne, Wu, Feng, Nakamura, Shuji, Speck, James S., & Marcinkevičius, Saulius. Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells. United States. https://doi.org/10.1063/5.0031863
Yapparov, Rinat, Chow, Yi Chao, Lynsky, Cheyenne, Wu, Feng, Nakamura, Shuji, Speck, James S., and Marcinkevičius, Saulius. Wed .
"Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells". United States. https://doi.org/10.1063/5.0031863. https://www.osti.gov/servlets/purl/1740012.
@article{osti_1740012,
title = {Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells},
author = {Yapparov, Rinat and Chow, Yi Chao and Lynsky, Cheyenne and Wu, Feng and Nakamura, Shuji and Speck, James S. and Marcinkevičius, Saulius},
abstractNote = {Time- and spectrally-resolved scanning near-field optical microscopy was applied to study spatial variations of photoluminescence (PL) spectra and carrier dynamics in polar InGaN/GaN single quantum wells (QWs) emitting from 410 nm to 570 nm. The main attention was devoted to variations of PL properties and carrier dynamics around V-defects. The PL intensity, peak wavelength, and linewidth, as well as the radiative and nonradiative recombination times, were found to be different in V-defect-rich and defect-free regions. The radiative lifetime close to the defects was longer up to several times, which is attributed to an increased electron and hole wave function separation in the QW plane. PL decay times, measured using excitation and collection through the near-field probe, were one to two orders of magnitude shorter than PL decay times measured in the far field. This shows that the near-field PL decay and the integrated PL intensity are primarily determined by the carrier out-diffusion from under the probe. Only in the immediate vicinity of the V-defects, the near-field PL decays due to the nonradiative recombination at dislocations. The area of such enhanced nonradiative recombination is limited to just a few percent of the total QW area. This shows that recombination via dislocations and V-defects does not play a decisive role in the overall nonradiative recombination and internal quantum efficiency of polar InGaN/GaN QWs.},
doi = {10.1063/5.0031863},
journal = {Journal of Applied Physics},
number = 22,
volume = 128,
place = {United States},
year = {Wed Dec 09 00:00:00 EST 2020},
month = {Wed Dec 09 00:00:00 EST 2020}
}
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