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Title: Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells

Abstract

Time- and spectrally-resolved scanning near-field optical microscopy was applied to study spatial variations of photoluminescence (PL) spectra and carrier dynamics in polar InGaN/GaN single quantum wells (QWs) emitting from 410 nm to 570 nm. The main attention was devoted to variations of PL properties and carrier dynamics around V-defects. The PL intensity, peak wavelength, and linewidth, as well as the radiative and nonradiative recombination times, were found to be different in V-defect-rich and defect-free regions. The radiative lifetime close to the defects was longer up to several times, which is attributed to an increased electron and hole wave function separation in the QW plane. PL decay times, measured using excitation and collection through the near-field probe, were one to two orders of magnitude shorter than PL decay times measured in the far field. This shows that the near-field PL decay and the integrated PL intensity are primarily determined by the carrier out-diffusion from under the probe. Only in the immediate vicinity of the V-defects, the near-field PL decays due to the nonradiative recombination at dislocations. The area of such enhanced nonradiative recombination is limited to just a few percent of the total QW area. This shows that recombination via dislocationsmore » and V-defects does not play a decisive role in the overall nonradiative recombination and internal quantum efficiency of polar InGaN/GaN QWs.« less

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2];  [2];  [2];  [2]; ORCiD logo [1]
  1. AlbaNova Univ. Center, Stockholm (Sweden)
  2. Univ. of California, Santa Barbara, CA (United States)
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office; Swedish Research Council (SRC); Swedish Energy Agency; Simons Foundation
OSTI Identifier:
1740012
Grant/Contract Number:  
EE0008204; 45390-1; 2018-04783; 601952
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 128; Journal Issue: 22; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Scanning probe microscopy; Photoexcitations; Emission spectroscopy; Quantum wells; Light emitting diodes; Photoluminescence spectroscopy

Citation Formats

Yapparov, Rinat, Chow, Yi Chao, Lynsky, Cheyenne, Wu, Feng, Nakamura, Shuji, Speck, James S., and Marcinkevičius, Saulius. Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells. United States: N. p., 2020. Web. https://doi.org/10.1063/5.0031863.
Yapparov, Rinat, Chow, Yi Chao, Lynsky, Cheyenne, Wu, Feng, Nakamura, Shuji, Speck, James S., & Marcinkevičius, Saulius. Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells. United States. https://doi.org/10.1063/5.0031863
Yapparov, Rinat, Chow, Yi Chao, Lynsky, Cheyenne, Wu, Feng, Nakamura, Shuji, Speck, James S., and Marcinkevičius, Saulius. Wed . "Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells". United States. https://doi.org/10.1063/5.0031863. https://www.osti.gov/servlets/purl/1740012.
@article{osti_1740012,
title = {Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells},
author = {Yapparov, Rinat and Chow, Yi Chao and Lynsky, Cheyenne and Wu, Feng and Nakamura, Shuji and Speck, James S. and Marcinkevičius, Saulius},
abstractNote = {Time- and spectrally-resolved scanning near-field optical microscopy was applied to study spatial variations of photoluminescence (PL) spectra and carrier dynamics in polar InGaN/GaN single quantum wells (QWs) emitting from 410 nm to 570 nm. The main attention was devoted to variations of PL properties and carrier dynamics around V-defects. The PL intensity, peak wavelength, and linewidth, as well as the radiative and nonradiative recombination times, were found to be different in V-defect-rich and defect-free regions. The radiative lifetime close to the defects was longer up to several times, which is attributed to an increased electron and hole wave function separation in the QW plane. PL decay times, measured using excitation and collection through the near-field probe, were one to two orders of magnitude shorter than PL decay times measured in the far field. This shows that the near-field PL decay and the integrated PL intensity are primarily determined by the carrier out-diffusion from under the probe. Only in the immediate vicinity of the V-defects, the near-field PL decays due to the nonradiative recombination at dislocations. The area of such enhanced nonradiative recombination is limited to just a few percent of the total QW area. This shows that recombination via dislocations and V-defects does not play a decisive role in the overall nonradiative recombination and internal quantum efficiency of polar InGaN/GaN QWs.},
doi = {10.1063/5.0031863},
journal = {Journal of Applied Physics},
number = 22,
volume = 128,
place = {United States},
year = {2020},
month = {12}
}

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Works referenced in this record:

Effects of macroscopic polarization in III-V nitride multiple quantum wells
journal, September 1999

  • Fiorentini, Vincenzo; Bernardini, Fabio; Della Sala, Fabio
  • Physical Review B, Vol. 60, Issue 12
  • DOI: 10.1103/PhysRevB.60.8849

Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
journal, April 2013

  • Feezell, Daniel F.; Speck, James S.; DenBaars, Steven P.
  • Journal of Display Technology, Vol. 9, Issue 4
  • DOI: 10.1109/JDT.2012.2227682

Carrier localization in the vicinity of dislocations in InGaN
journal, January 2017

  • Massabuau, F. C-P.; Chen, P.; Horton, M. K.
  • Journal of Applied Physics, Vol. 121, Issue 1
  • DOI: 10.1063/1.4973278

Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar In x Ga 1 x N / GaN quantum wells
journal, June 2016


Photoexcited carrier recombination in wide m -plane InGaN/GaN quantum wells
journal, September 2013

  • Marcinkevičius, S.; Kelchner, K. M.; Kuritzky, L. Y.
  • Applied Physics Letters, Vol. 103, Issue 11
  • DOI: 10.1063/1.4820839

Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy
journal, November 2017


Mapping In concentration, strain, and internal electric field in InGaN/GaN quantum well structure
journal, March 2004

  • Takeguchi, M.; McCartney, M. R.; Smith, David J.
  • Applied Physics Letters, Vol. 84, Issue 12
  • DOI: 10.1063/1.1689400

Nanoscopic spectroscopy of potential barriers formed around V-pits in InGaN/GaN multiple quantum wells on moderate temperature GaN pit expansion layers
journal, August 2018

  • Kurai, Satoshi; Okawa, Kohei; Makio, Ryoga
  • Journal of Applied Physics, Vol. 124, Issue 8
  • DOI: 10.1063/1.5043578

Carrier dynamics in blue and green emitting InGaN MQWs: Carrier dynamics in blue and green emitting InGaN MQWs
journal, January 2015

  • Aleksiejūnas, R.; Nomeika, K.; Miasojedovas, S.
  • physica status solidi (b), Vol. 252, Issue 5
  • DOI: 10.1002/pssb.201451583

Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers
journal, April 2017


Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
journal, September 2013

  • Marcinkevičius, S.; Zhao, Y.; Kelchner, K. M.
  • Applied Physics Letters, Vol. 103, Issue 13
  • DOI: 10.1063/1.4823589

Generated Carrier Dynamics in V-Pit-Enhanced InGaN/GaN Light-Emitting Diode
journal, December 2017


Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
journal, October 2010

  • Liuolia, V.; Pinos, A.; Marcinkevičius, S.
  • Applied Physics Letters, Vol. 97, Issue 15
  • DOI: 10.1063/1.3502482

V-pits as Barriers to Diffusion of Carriers in InGaN/GaN Quantum Wells
journal, August 2015

  • Sheen, Mi-Hyang; Kim, Sung-Dae; Lee, Jong-Hwan
  • Journal of Electronic Materials, Vol. 44, Issue 11
  • DOI: 10.1007/s11664-015-3994-z

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits
journal, May 2011

  • Tomiya, Shigetaka; Kanitani, Yuya; Tanaka, Shinji
  • Applied Physics Letters, Vol. 98, Issue 18
  • DOI: 10.1063/1.3585118

Photocarrier dynamics near V-shaped pits in InxGa1−xN/GaN multiple quantum wells
journal, June 2014


Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence
journal, January 2017

  • Uždavinys, Tomas K.; Becerra, Daniel L.; Ivanov, Ruslan
  • Optical Materials Express, Vol. 7, Issue 9
  • DOI: 10.1364/OME.7.003116

Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
journal, February 1998

  • Wu, X. H.; Elsass, C. R.; Abare, A.
  • Applied Physics Letters, Vol. 72, Issue 6
  • DOI: 10.1063/1.120844

Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films
journal, September 1998

  • Kim, Ig-Hyeon; Park, Hyeong-Soo; Park, Yong-Jo
  • Applied Physics Letters, Vol. 73, Issue 12
  • DOI: 10.1063/1.122229

Correlation of Optical, Structural, and Compositional Properties with V-Pit Distribution in InGaN/GaN Multiquantum Wells
journal, May 2019

  • Zoellner, Marvin Hartwig; Chahine, Gilbert André; Lahourcade, Lise
  • ACS Applied Materials & Interfaces, Vol. 11, Issue 25
  • DOI: 10.1021/acsami.9b04431

Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra
journal, September 2008


Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes
journal, January 2015

  • Okada, Narihito; Kashihara, Hiroyuki; Sugimoto, Kohei
  • Journal of Applied Physics, Vol. 117, Issue 2
  • DOI: 10.1063/1.4905914

An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits
journal, June 2018

  • Liu, Mengling; Zhao, Jie; Zhou, Shengjun
  • Nanomaterials, Vol. 8, Issue 7
  • DOI: 10.3390/nano8070450

Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy
journal, December 2016

  • Marcinkevičius, Saulius; Uždavinys, Tomas K.; Foronda, Humberto M.
  • Physical Review B, Vol. 94, Issue 23
  • DOI: 10.1103/PhysRevB.94.235205

Study on the performance of InGaN-based green LED by designing different preparing layers
journal, March 2019


Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells
journal, January 2017

  • Ivanov, Ruslan; Marcinkevičius, Saulius; Uždavinys, Tomas K.
  • Applied Physics Letters, Vol. 110, Issue 3
  • DOI: 10.1063/1.4974297

Polarization fields in nitride nanostructures: 10 points to think about
journal, October 2000


Dislocation Scattering in GaN
journal, February 1999


Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells
journal, November 2015

  • Ivanov, R.; Marcinkevičius, S.; Zhao, Y.
  • Applied Physics Letters, Vol. 107, Issue 21
  • DOI: 10.1063/1.4936386

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations
journal, January 2018

  • Butté, Raphaël; Lahourcade, Lise; Uždavinys, Tomas Kristijonas
  • Applied Physics Letters, Vol. 112, Issue 3
  • DOI: 10.1063/1.5010879

Exciton hopping in In x Ga 1 x N multiple quantum wells
journal, February 2005


Strain relaxation due to V-pit formation in InxGa1−xN∕GaN epilayers grown on sapphire
journal, October 2005


Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements
journal, November 2017

  • Kurai, Satoshi; Higaki, Shota; Imura, Nobuto
  • physica status solidi (b), Vol. 255, Issue 5
  • DOI: 10.1002/pssb.201700358

Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes
journal, September 2009


Lateral charge carrier diffusion in InGaN quantum wells
journal, January 2012

  • Danhof, J.; Solowan, H. -M.; Schwarz, U. T.
  • physica status solidi (b), Vol. 249, Issue 3
  • DOI: 10.1002/pssb.201100476

Impact of recombination centers on the spontaneous emission of semiconductors under steady-state and transient conditions
journal, August 1996


Carrier localization mechanisms in In x Ga 1 x N/GaN quantum wells
journal, March 2011