Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells
Abstract
Time- and spectrally-resolved scanning near-field optical microscopy was applied to study spatial variations of photoluminescence (PL) spectra and carrier dynamics in polar InGaN/GaN single quantum wells (QWs) emitting from 410 nm to 570 nm. The main attention was devoted to variations of PL properties and carrier dynamics around V-defects. The PL intensity, peak wavelength, and linewidth, as well as the radiative and nonradiative recombination times, were found to be different in V-defect-rich and defect-free regions. The radiative lifetime close to the defects was longer up to several times, which is attributed to an increased electron and hole wave function separation in the QW plane. PL decay times, measured using excitation and collection through the near-field probe, were one to two orders of magnitude shorter than PL decay times measured in the far field. This shows that the near-field PL decay and the integrated PL intensity are primarily determined by the carrier out-diffusion from under the probe. Only in the immediate vicinity of the V-defects, the near-field PL decays due to the nonradiative recombination at dislocations. The area of such enhanced nonradiative recombination is limited to just a few percent of the total QW area. This shows that recombination via dislocationsmore »
- Authors:
-
[1];
[2];
[2];
[1]
- AlbaNova Univ. Center, Stockholm (Sweden)
- Univ. of California, Santa Barbara, CA (United States)
- Publication Date:
- Research Org.:
- Univ. of California, Santa Barbara, CA (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office; Swedish Research Council (SRC); Swedish Energy Agency; Simons Foundation
- OSTI Identifier:
- 1740012
- Grant/Contract Number:
- EE0008204; 45390-1; 2018-04783; 601952
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 128; Journal Issue: 22; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Scanning probe microscopy; Photoexcitations; Emission spectroscopy; Quantum wells; Light emitting diodes; Photoluminescence spectroscopy
Citation Formats
Yapparov, Rinat, Chow, Yi Chao, Lynsky, Cheyenne, Wu, Feng, Nakamura, Shuji, Speck, James S., and Marcinkevičius, Saulius. Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells. United States: N. p., 2020.
Web. doi:10.1063/5.0031863.
Yapparov, Rinat, Chow, Yi Chao, Lynsky, Cheyenne, Wu, Feng, Nakamura, Shuji, Speck, James S., & Marcinkevičius, Saulius. Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells. United States. https://doi.org/10.1063/5.0031863
Yapparov, Rinat, Chow, Yi Chao, Lynsky, Cheyenne, Wu, Feng, Nakamura, Shuji, Speck, James S., and Marcinkevičius, Saulius. Wed .
"Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells". United States. https://doi.org/10.1063/5.0031863. https://www.osti.gov/servlets/purl/1740012.
@article{osti_1740012,
title = {Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells},
author = {Yapparov, Rinat and Chow, Yi Chao and Lynsky, Cheyenne and Wu, Feng and Nakamura, Shuji and Speck, James S. and Marcinkevičius, Saulius},
abstractNote = {Time- and spectrally-resolved scanning near-field optical microscopy was applied to study spatial variations of photoluminescence (PL) spectra and carrier dynamics in polar InGaN/GaN single quantum wells (QWs) emitting from 410 nm to 570 nm. The main attention was devoted to variations of PL properties and carrier dynamics around V-defects. The PL intensity, peak wavelength, and linewidth, as well as the radiative and nonradiative recombination times, were found to be different in V-defect-rich and defect-free regions. The radiative lifetime close to the defects was longer up to several times, which is attributed to an increased electron and hole wave function separation in the QW plane. PL decay times, measured using excitation and collection through the near-field probe, were one to two orders of magnitude shorter than PL decay times measured in the far field. This shows that the near-field PL decay and the integrated PL intensity are primarily determined by the carrier out-diffusion from under the probe. Only in the immediate vicinity of the V-defects, the near-field PL decays due to the nonradiative recombination at dislocations. The area of such enhanced nonradiative recombination is limited to just a few percent of the total QW area. This shows that recombination via dislocations and V-defects does not play a decisive role in the overall nonradiative recombination and internal quantum efficiency of polar InGaN/GaN QWs.},
doi = {10.1063/5.0031863},
journal = {Journal of Applied Physics},
number = 22,
volume = 128,
place = {United States},
year = {Wed Dec 09 00:00:00 EST 2020},
month = {Wed Dec 09 00:00:00 EST 2020}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Effects of macroscopic polarization in III-V nitride multiple quantum wells
journal, September 1999
- Fiorentini, Vincenzo; Bernardini, Fabio; Della Sala, Fabio
- Physical Review B, Vol. 60, Issue 12
Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
journal, April 2013
- Feezell, Daniel F.; Speck, James S.; DenBaars, Steven P.
- Journal of Display Technology, Vol. 9, Issue 4
Carrier localization in the vicinity of dislocations in InGaN
journal, January 2017
- Massabuau, F. C-P.; Chen, P.; Horton, M. K.
- Journal of Applied Physics, Vol. 121, Issue 1
Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar quantum wells
journal, June 2016
- Mounir, Christian; Schwarz, Ulrich T.; Koslow, Ingrid L.
- Physical Review B, Vol. 93, Issue 23
Photoexcited carrier recombination in wide m -plane InGaN/GaN quantum wells
journal, September 2013
- Marcinkevičius, S.; Kelchner, K. M.; Kuritzky, L. Y.
- Applied Physics Letters, Vol. 103, Issue 11
Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy
journal, November 2017
- Mensi, Mounir; Ivanov, Ruslan; Uždavinys, Tomas K.
- ACS Photonics, Vol. 5, Issue 2
Mapping In concentration, strain, and internal electric field in InGaN/GaN quantum well structure
journal, March 2004
- Takeguchi, M.; McCartney, M. R.; Smith, David J.
- Applied Physics Letters, Vol. 84, Issue 12
Nanoscopic spectroscopy of potential barriers formed around V-pits in InGaN/GaN multiple quantum wells on moderate temperature GaN pit expansion layers
journal, August 2018
- Kurai, Satoshi; Okawa, Kohei; Makio, Ryoga
- Journal of Applied Physics, Vol. 124, Issue 8
Carrier dynamics in blue and green emitting InGaN MQWs: Carrier dynamics in blue and green emitting InGaN MQWs
journal, January 2015
- Aleksiejūnas, R.; Nomeika, K.; Miasojedovas, S.
- physica status solidi (b), Vol. 252, Issue 5
Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes
journal, November 2014
- Quan, Zhijue; Wang, Li; Zheng, Changda
- Journal of Applied Physics, Vol. 116, Issue 18
Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers
journal, April 2017
- Piccardo, Marco; Li, Chi-Kang; Wu, Yuh-Renn
- Physical Review B, Vol. 95, Issue 14
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
journal, September 2013
- Marcinkevičius, S.; Zhao, Y.; Kelchner, K. M.
- Applied Physics Letters, Vol. 103, Issue 13
Generated Carrier Dynamics in V-Pit-Enhanced InGaN/GaN Light-Emitting Diode
journal, December 2017
- Ajia, Idris A.; Edwards, Paul R.; Pak, Yusin
- ACS Photonics, Vol. 5, Issue 3
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
journal, October 2010
- Liuolia, V.; Pinos, A.; Marcinkevičius, S.
- Applied Physics Letters, Vol. 97, Issue 15
V-pits as Barriers to Diffusion of Carriers in InGaN/GaN Quantum Wells
journal, August 2015
- Sheen, Mi-Hyang; Kim, Sung-Dae; Lee, Jong-Hwan
- Journal of Electronic Materials, Vol. 44, Issue 11
Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits
journal, May 2011
- Tomiya, Shigetaka; Kanitani, Yuya; Tanaka, Shinji
- Applied Physics Letters, Vol. 98, Issue 18
Photocarrier dynamics near V-shaped pits in InxGa1−xN/GaN multiple quantum wells
journal, June 2014
- Shin, Taeho; Li, Xiang-Shu; Ko, Dong-Su
- Chemical Physics, Vol. 436-437
Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence
journal, January 2017
- Uždavinys, Tomas K.; Becerra, Daniel L.; Ivanov, Ruslan
- Optical Materials Express, Vol. 7, Issue 9
Suppression of Nonradiative Recombination by V-Shaped Pits in Quantum Wells Produces a Large Increase in the Light Emission Efficiency
journal, September 2005
- Hangleiter, A.; Hitzel, F.; Netzel, C.
- Physical Review Letters, Vol. 95, Issue 12
Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
journal, February 1998
- Wu, X. H.; Elsass, C. R.; Abare, A.
- Applied Physics Letters, Vol. 72, Issue 6
Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films
journal, September 1998
- Kim, Ig-Hyeon; Park, Hyeong-Soo; Park, Yong-Jo
- Applied Physics Letters, Vol. 73, Issue 12
Correlation of Optical, Structural, and Compositional Properties with V-Pit Distribution in InGaN/GaN Multiquantum Wells
journal, May 2019
- Zoellner, Marvin Hartwig; Chahine, Gilbert André; Lahourcade, Lise
- ACS Applied Materials & Interfaces, Vol. 11, Issue 25
Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
journal, July 2018
- Hahn, W.; Lentali, J. -M.; Polovodov, P.
- Physical Review B, Vol. 98, Issue 4
Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra
journal, September 2008
- Kaneta, A.; Funato, M.; Kawakami, Y.
- Physical Review B, Vol. 78, Issue 12
Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes
journal, January 2015
- Okada, Narihito; Kashihara, Hiroyuki; Sugimoto, Kohei
- Journal of Applied Physics, Vol. 117, Issue 2
An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits
journal, June 2018
- Liu, Mengling; Zhao, Jie; Zhou, Shengjun
- Nanomaterials, Vol. 8, Issue 7
Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy
journal, December 2016
- Marcinkevičius, Saulius; Uždavinys, Tomas K.; Foronda, Humberto M.
- Physical Review B, Vol. 94, Issue 23
Study on the performance of InGaN-based green LED by designing different preparing layers
journal, March 2019
- Jiang, Xingan; Zheng, Changda; Mo, Chunlan
- Optical Materials, Vol. 89
Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells
journal, January 2017
- Ivanov, Ruslan; Marcinkevičius, Saulius; Uždavinys, Tomas K.
- Applied Physics Letters, Vol. 110, Issue 3
Polarization fields in nitride nanostructures: 10 points to think about
journal, October 2000
- Bernardini, Fabio; Fiorentini, Vincenzo
- Applied Surface Science, Vol. 166, Issue 1-4
Emission and recombination characteristics of quantum well structures with nonradiative recombination suppression by V-shaped pits
journal, October 2007
- Netzel, Carsten; Bremers, Heiko; Hoffmann, Lars
- Physical Review B, Vol. 76, Issue 15
Dislocation Scattering in GaN
journal, February 1999
- Look, D. C.; Sizelove, J. R.
- Physical Review Letters, Vol. 82, Issue 6
Nanoscale Characterization of V-defect in InGaN/GaN QWs LEDs using Near-Field Scanning Optical Microscopy
journal, April 2019
- Li, Yufeng; Tang, Weihan; Zhang, Ye
- Nanomaterials, Vol. 9, Issue 4, p. 633
Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells
journal, November 2015
- Ivanov, R.; Marcinkevičius, S.; Zhao, Y.
- Applied Physics Letters, Vol. 107, Issue 21
Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations
journal, January 2018
- Butté, Raphaël; Lahourcade, Lise; Uždavinys, Tomas Kristijonas
- Applied Physics Letters, Vol. 112, Issue 3
Exciton hopping in multiple quantum wells
journal, February 2005
- Kazlauskas, K.; Tamulaitis, G.; Pobedinskas, P.
- Physical Review B, Vol. 71, Issue 8
Strain relaxation due to V-pit formation in InxGa1−xN∕GaN epilayers grown on sapphire
journal, October 2005
- Song, T. L.
- Journal of Applied Physics, Vol. 98, Issue 8
Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements
journal, November 2017
- Kurai, Satoshi; Higaki, Shota; Imura, Nobuto
- physica status solidi (b), Vol. 255, Issue 5
Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes
journal, September 2009
- Scheibenzuber, W. G.; Schwarz, U. T.; Veprek, R. G.
- Physical Review B, Vol. 80, Issue 11
Lateral charge carrier diffusion in InGaN quantum wells
journal, January 2012
- Danhof, J.; Solowan, H. -M.; Schwarz, U. T.
- physica status solidi (b), Vol. 249, Issue 3
Impact of recombination centers on the spontaneous emission of semiconductors under steady-state and transient conditions
journal, August 1996
- Brandt, Oliver; Yang, Hui; Ploog, Klaus H.
- Physical Review B, Vol. 54, Issue 8
Carrier localization mechanisms in In Ga N/GaN quantum wells
journal, March 2011
- Watson-Parris, D.; Godfrey, M. J.; Dawson, P.
- Physical Review B, Vol. 83, Issue 11
Review—On The Search for Efficient Solid State Light Emitters: Past, Present, Future
journal, January 2020
- Weisbuch, Claude
- ECS Journal of Solid State Science and Technology, Vol. 9, Issue 1