Growth and Characterization of Arsenic-Doped CdTe1-xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method

Nagaoka, Akira; Nishioka, Kensuke; Yoshino, Kenji; Kuciauskas, Darius; Scarpulla, Michael A.

doi:10.1007/s11664-020-08343-z

Title: Growth and Characterization of Arsenic-Doped CdTe_1-xSe_x Single Crystals Grown by the Cd-Solvent Traveling Heater Method

Abstract

The photovoltaic performance of CdTe solar cells is mainly limited by low doping and short minority carrier lifetime. Group-V element doping and Se-alloying have a significant impact on tuning these fundamental CdTe properties. In this paper, we report the growth of p-type As-doped, Cd-rich CdTe_1-xSe_x single crystals using metallic Cd as the solvent in the traveling-heater method. The structural and electrical properties of CdTe1-xSex are examined for different Se concentrations. CdTe_1-xSe_x single crystals (0 ≤ x ≤ 0.5) with zincblende structure indicate homogeneous composition. The 10¹⁷ cm-3 As-doping activation efficiency can be maintained at close to 50% for x ≤ 0.2. Se alloying leads to bulk minority carrier lifetime exceeding 30 ns for samples doped near 1017 cm^-3. These results help us to overcome the current roadblocks in device performance.

Authors:

^[1]; Nishioka, Kensuke ^[1]; Yoshino, Kenji ^[2]; Kuciauskas, Darius ^[3]; Scarpulla, Michael A. ^[4]

Univ. of Miyazaki (Japan). Research Center for Sustainable Energy and Environmental Engineering
Univ. of Miyazaki (Japan). Dept. of Applied Physics and Electronic Engineering
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Univ. of Utah, Salt Lake City, UT (United States)

Publication Date:: Sun Aug 02 00:00:00 EDT 2020

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1660152

Report Number(s):: NREL/JA-5900-76939
Journal ID: ISSN 0361-5235; MainId:24902;UUID:c115ac44-b84a-4d78-b932-a980c95328a2;MainAdminID:15208

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Electronic Materials

Additional Journal Information:: Journal Volume: 49; Journal Issue: 11; Journal ID: ISSN 0361-5235

Publisher:: Springer

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CdTeSe; group-V doping; minority carrier lifetime; photovoltaics; solar cells; single crystals

Citation Formats


                    Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, and Scarpulla, Michael A. Growth and Characterization of Arsenic-Doped CdTe1-xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method.  United States: N. p., 2020. 
Web.  doi:10.1007/s11664-020-08343-z.

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                    Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, & Scarpulla, Michael A. Growth and Characterization of Arsenic-Doped CdTe1-xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method.  United States.  https://doi.org/10.1007/s11664-020-08343-z

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                    Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, and Scarpulla, Michael A. Sun .  
"Growth and Characterization of Arsenic-Doped CdTe1-xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method".  United States.  https://doi.org/10.1007/s11664-020-08343-z.  https://www.osti.gov/servlets/purl/1660152.

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@article{osti_1660152,

  title        = {Growth and Characterization of Arsenic-Doped CdTe1-xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method},

  author       = {Nagaoka, Akira and Nishioka, Kensuke and Yoshino, Kenji and Kuciauskas, Darius and Scarpulla, Michael A.},

  abstractNote = {The photovoltaic performance of CdTe solar cells is mainly limited by low doping and short minority carrier lifetime. Group-V element doping and Se-alloying have a significant impact on tuning these fundamental CdTe properties. In this paper, we report the growth of p-type As-doped, Cd-rich CdTe1-xSex single crystals using metallic Cd as the solvent in the traveling-heater method. The structural and electrical properties of CdTe1-xSex are examined for different Se concentrations. CdTe1-xSex single crystals (0 ≤ x ≤ 0.5) with zincblende structure indicate homogeneous composition. The 1017 cm-3 As-doping activation efficiency can be maintained at close to 50% for x ≤ 0.2. Se alloying leads to bulk minority carrier lifetime exceeding 30 ns for samples doped near 1017 cm-3. These results help us to overcome the current roadblocks in device performance.},

  doi          = {10.1007/s11664-020-08343-z},

  journal      = {Journal of Electronic Materials},

  number       = 11,

  volume       = 49,

  place        = {United States},

  year         = {Sun Aug 02 00:00:00 EDT 2020},

  month        = {Sun Aug 02 00:00:00 EDT 2020}

}

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Similar Records

Title: Growth and Characterization of Arsenic-Doped CdTe1-xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method

Abstract

Citation Formats

First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys journal, February 2000

Solar cell efficiency tables (version 54) journal, June 2019

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Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing journal, July 2015

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High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals journal, May 2018

First-principles study of roles of Cu and Cl in polycrystalline CdTe journal, January 2016

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Disorder effects on the density of states of the II-VI semiconductor alloys Hg 0.5 Cd 0.5 Te, Cd 0.5 Zn 0.5 Te, and Hg 0.5 Zn 0.5 Te journal, January 1991

Review on first-principles study of defect properties of CdTe as a solar cell absorber journal, July 2016

Phase behavior in the CdTe–CdS pseudobinary system journal, July 2002

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Phase Diagram of the CdTe-CdSe Pseudobinary System journal, January 1970

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Radiative and interfacial recombination in CdTe heterostructures journal, December 2014

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Title: Growth and Characterization of Arsenic-Doped CdTe_1-xSe_x Single Crystals Grown by the Cd-Solvent Traveling Heater Method

First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys
journal, February 2000

Solar cell efficiency tables (version 54)
journal, June 2019

Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study
journal, February 2016

Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing
journal, July 2015

Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV
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Structural and compositional dependence of the CdTexSe1−x alloy layer photoactivity in CdTe-based solar cells
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High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals
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First-principles study of roles of Cu and Cl in polycrystalline CdTe
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Recombination velocity less than 100 cm/s at polycrystalline Al ₂ O ₃ /CdSeTe interfaces
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Disorder effects on the density of states of the II-VI semiconductor alloys ${Hg}_{0.5}$ ${Cd}_{0.5}$ Te, ${Cd}_{0.5}$ ${Zn}_{0.5}$ Te, and ${Hg}_{0.5}$ ${Zn}_{0.5}$ Te
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