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Title: Growth and Characterization of Arsenic-Doped CdTe1-xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method

Abstract

The photovoltaic performance of CdTe solar cells is mainly limited by low doping and short minority carrier lifetime. Group-V element doping and Se-alloying have a significant impact on tuning these fundamental CdTe properties. In this paper, we report the growth of p-type As-doped, Cd-rich CdTe1-xSex single crystals using metallic Cd as the solvent in the traveling-heater method. The structural and electrical properties of CdTe1-xSex are examined for different Se concentrations. CdTe1-xSex single crystals (0 ≤ x ≤ 0.5) with zincblende structure indicate homogeneous composition. The 1017 cm-3 As-doping activation efficiency can be maintained at close to 50% for x ≤ 0.2. Se alloying leads to bulk minority carrier lifetime exceeding 30 ns for samples doped near 1017 cm-3. These results help us to overcome the current roadblocks in device performance.

Authors:
ORCiD logo [1];  [1];  [2];  [3];  [4]
  1. Univ. of Miyazaki (Japan). Research Center for Sustainable Energy and Environmental Engineering
  2. Univ. of Miyazaki (Japan). Dept. of Applied Physics and Electronic Engineering
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  4. Univ. of Utah, Salt Lake City, UT (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1660152
Report Number(s):
NREL/JA-5900-76939
Journal ID: ISSN 0361-5235; MainId:24902;UUID:c115ac44-b84a-4d78-b932-a980c95328a2;MainAdminID:15208
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Electronic Materials
Additional Journal Information:
Journal Volume: 49; Journal Issue: 11; Journal ID: ISSN 0361-5235
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CdTeSe; group-V doping; minority carrier lifetime; photovoltaics; solar cells; single crystals

Citation Formats

Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, and Scarpulla, Michael A. Growth and Characterization of Arsenic-Doped CdTe1-xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method. United States: N. p., 2020. Web. https://doi.org/10.1007/s11664-020-08343-z.
Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, & Scarpulla, Michael A. Growth and Characterization of Arsenic-Doped CdTe1-xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method. United States. https://doi.org/10.1007/s11664-020-08343-z
Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, and Scarpulla, Michael A. Sun . "Growth and Characterization of Arsenic-Doped CdTe1-xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method". United States. https://doi.org/10.1007/s11664-020-08343-z. https://www.osti.gov/servlets/purl/1660152.
@article{osti_1660152,
title = {Growth and Characterization of Arsenic-Doped CdTe1-xSex Single Crystals Grown by the Cd-Solvent Traveling Heater Method},
author = {Nagaoka, Akira and Nishioka, Kensuke and Yoshino, Kenji and Kuciauskas, Darius and Scarpulla, Michael A.},
abstractNote = {The photovoltaic performance of CdTe solar cells is mainly limited by low doping and short minority carrier lifetime. Group-V element doping and Se-alloying have a significant impact on tuning these fundamental CdTe properties. In this paper, we report the growth of p-type As-doped, Cd-rich CdTe1-xSex single crystals using metallic Cd as the solvent in the traveling-heater method. The structural and electrical properties of CdTe1-xSex are examined for different Se concentrations. CdTe1-xSex single crystals (0 ≤ x ≤ 0.5) with zincblende structure indicate homogeneous composition. The 1017 cm-3 As-doping activation efficiency can be maintained at close to 50% for x ≤ 0.2. Se alloying leads to bulk minority carrier lifetime exceeding 30 ns for samples doped near 1017 cm-3. These results help us to overcome the current roadblocks in device performance.},
doi = {10.1007/s11664-020-08343-z},
journal = {Journal of Electronic Materials},
number = 11,
volume = 49,
place = {United States},
year = {2020},
month = {8}
}

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