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Title: Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method

Abstract

We report the growth of p-type As-doped, Cd-rich CdTe single crystals using metallic Cd as the solvent in the traveling-heater method. We investigate the growth process from Cd solution in terms of the solid-liquid interface shape and the effects of As incorporation on p-type doping. The resulting CdTe crystals have Cd-rich composition which enhances p-type doping. The As doping efficacy was measured for As concentrations by the combination of inductively coupled plasma mass spectrometry, capacitance-voltage measurements. As a result, the p-type doping concentration varied from 6 × 1015 to 8 × 1016 cm–3 with increasing As concentration, with an apparent doping limit just below 1017 cm–3.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1]
  1. Univ. of Utah, Salt Lake City, UT (United States)
Publication Date:
Research Org.:
Stanford Univ., CA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1579803
Alternate Identifier(s):
OSTI ID: 1413381
Grant/Contract Number:  
EE0004946
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 467; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; A1. Growth interface; A2. Growth from solutions; A2. THM; B2 CdTe

Citation Formats

Nagaoka, Akira, Han, Kyu -Bum, Misra, Sudhajit, Wilenski, Thomas, Sparks, Taylor D., and Scarpulla, Michael A.. Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method. United States: N. p., 2017. Web. https://doi.org/10.1016/j.jcrysgro.2017.03.002.
Nagaoka, Akira, Han, Kyu -Bum, Misra, Sudhajit, Wilenski, Thomas, Sparks, Taylor D., & Scarpulla, Michael A.. Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method. United States. https://doi.org/10.1016/j.jcrysgro.2017.03.002
Nagaoka, Akira, Han, Kyu -Bum, Misra, Sudhajit, Wilenski, Thomas, Sparks, Taylor D., and Scarpulla, Michael A.. Thu . "Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method". United States. https://doi.org/10.1016/j.jcrysgro.2017.03.002. https://www.osti.gov/servlets/purl/1579803.
@article{osti_1579803,
title = {Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method},
author = {Nagaoka, Akira and Han, Kyu -Bum and Misra, Sudhajit and Wilenski, Thomas and Sparks, Taylor D. and Scarpulla, Michael A.},
abstractNote = {We report the growth of p-type As-doped, Cd-rich CdTe single crystals using metallic Cd as the solvent in the traveling-heater method. We investigate the growth process from Cd solution in terms of the solid-liquid interface shape and the effects of As incorporation on p-type doping. The resulting CdTe crystals have Cd-rich composition which enhances p-type doping. The As doping efficacy was measured for As concentrations by the combination of inductively coupled plasma mass spectrometry, capacitance-voltage measurements. As a result, the p-type doping concentration varied from 6 × 1015 to 8 × 1016 cm–3 with increasing As concentration, with an apparent doping limit just below 1017 cm–3.},
doi = {10.1016/j.jcrysgro.2017.03.002},
journal = {Journal of Crystal Growth},
number = C,
volume = 467,
place = {United States},
year = {2017},
month = {3}
}

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Cited by: 5 works
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