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Title: Group-V Doping Impact on Cd-Rich CdTe Single Crystals Grown by Traveling-Heater Method

Abstract

Cd-rich CdTe single crystals were grown from Cd solvent in the traveling-heater method (THM) rather than the more common Te solvent used for high-resistivity CdTe. The growth process from Cd solution in terms of the solid-liquid interface shape and group-V doping under Cd-rich condition were investigated. Stable, flat solid-liquid interfaces can be obtained by optimizing THM furnace temperature profile. An apparent doping limit in the 10^16 to 10^17 cm^ -3 range which scales weakly with increasing group-V element concentrations in the Cd-rich CdTe samples were indicated from capacitance-voltage measurement. The two-photon excitation time-resolved photoluminescence revealed a bulk lifetime of 20-40 ns.

Authors:
 [1];  [2];  [3]; ORCiD logo [4];  [1]
  1. University of Utah
  2. University of Miyazaki
  3. Kyoto University
  4. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1523592
Report Number(s):
NREL/CP-5900-73996
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 25-30 June 2017, Washington, D.C.
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; minority-carrier lifetime; silicon; III-V growth; tandem cells; gettering

Citation Formats

Nagaoka, Akira, Yoshino, Kenji, Nose, Yoshitaro, Kuciauskas, Darius, and Scarpulla, Michael A. Group-V Doping Impact on Cd-Rich CdTe Single Crystals Grown by Traveling-Heater Method. United States: N. p., 2018. Web. doi:10.1109/PVSC.2017.8366462.
Nagaoka, Akira, Yoshino, Kenji, Nose, Yoshitaro, Kuciauskas, Darius, & Scarpulla, Michael A. Group-V Doping Impact on Cd-Rich CdTe Single Crystals Grown by Traveling-Heater Method. United States. https://doi.org/10.1109/PVSC.2017.8366462
Nagaoka, Akira, Yoshino, Kenji, Nose, Yoshitaro, Kuciauskas, Darius, and Scarpulla, Michael A. 2018. "Group-V Doping Impact on Cd-Rich CdTe Single Crystals Grown by Traveling-Heater Method". United States. https://doi.org/10.1109/PVSC.2017.8366462.
@article{osti_1523592,
title = {Group-V Doping Impact on Cd-Rich CdTe Single Crystals Grown by Traveling-Heater Method},
author = {Nagaoka, Akira and Yoshino, Kenji and Nose, Yoshitaro and Kuciauskas, Darius and Scarpulla, Michael A.},
abstractNote = {Cd-rich CdTe single crystals were grown from Cd solvent in the traveling-heater method (THM) rather than the more common Te solvent used for high-resistivity CdTe. The growth process from Cd solution in terms of the solid-liquid interface shape and group-V doping under Cd-rich condition were investigated. Stable, flat solid-liquid interfaces can be obtained by optimizing THM furnace temperature profile. An apparent doping limit in the 10^16 to 10^17 cm^ -3 range which scales weakly with increasing group-V element concentrations in the Cd-rich CdTe samples were indicated from capacitance-voltage measurement. The two-photon excitation time-resolved photoluminescence revealed a bulk lifetime of 20-40 ns.},
doi = {10.1109/PVSC.2017.8366462},
url = {https://www.osti.gov/biblio/1523592}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}

Conference:
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