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Title: Mechanisms contributing to dark current across metal/CdMnTe/metal structures

Abstract

The study of the electro-physical properties of n-type semi-insulating crystals of indium-doped Cd(Mn)Te solid solution with a resistivity ~ (4÷5)×10 10 Ohm×cm at T = 300 K was carried out. The structures both with an ohmic (In/Cd(Mn)Te/In) contacts and with the rectifying (Ni/Cd(Mn)Te/In) contact were fabricated. It was found that for the Ni/Cd(Mn)Te/In structure, the main mechanisms of charge transport were: the generation currents in the space-charge region, space-charge limited currents (SCLC) at high voltages, and the Ohm’s law was valid only on initial section the of the volt-ampere characteristics (I-VC). Calculation of the generation current dependence on the voltage according to the theory of Sah-Noyce-Shockley was carried out. For the In/Cd(Mn)Te/In structure it was observed the I-VC initial section, where the Ohm’s law was implemented, and the SCLCs with the participation of deep centers (traps) in semiinsulating crystal - at greater voltages. The concentration of deep centers (Nt ~ 7.4×10 10 cm -3 ) responsible for the trap mechanism in SCLC In/Cd(Mn)Te/In structures was calculated. The energy position Et of the deep levels was determined (provided that the energy was calculated from the valence band edge, Et = 0.89÷0.9 eV). It was discussed and grounded the assumption that SCLCmore » was the main mechanism limiting the operating voltages and, consequently, the use of Cd(Mn)Te-based ionizing-radiation detectors with ohmic contacts.« less

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [3]
  1. Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Savannah River Site (SRS), Aiken, SC (United States); Savannah River National Lab (SRNL), Aiken, SC (United States)
Sponsoring Org.:
USDOE Office of Environmental Management (EM)
OSTI Identifier:
1604906
Report Number(s):
[SRNL-STI-2019-00484]
[Journal ID: ISSN 0277-786X]
Grant/Contract Number:  
[AC09-08SR22470]
Resource Type:
Accepted Manuscript
Journal Name:
Proceedings of SPIE - The International Society for Optical Engineering
Additional Journal Information:
[ Journal Volume: 11114]; Journal ID: ISSN 0277-786X
Publisher:
SPIE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sklyarchuk, Valerii M., Fochuk, Petro, Solodin, Serhii, Zakharuk, Zinaida, Rarenko, Anna, Bolotnikov, A. E., and James, Ralph B. Mechanisms contributing to dark current across metal/CdMnTe/metal structures. United States: N. p., 2019. Web. doi:10.1117/12.2530444.
Sklyarchuk, Valerii M., Fochuk, Petro, Solodin, Serhii, Zakharuk, Zinaida, Rarenko, Anna, Bolotnikov, A. E., & James, Ralph B. Mechanisms contributing to dark current across metal/CdMnTe/metal structures. United States. doi:10.1117/12.2530444.
Sklyarchuk, Valerii M., Fochuk, Petro, Solodin, Serhii, Zakharuk, Zinaida, Rarenko, Anna, Bolotnikov, A. E., and James, Ralph B. Mon . "Mechanisms contributing to dark current across metal/CdMnTe/metal structures". United States. doi:10.1117/12.2530444.
@article{osti_1604906,
title = {Mechanisms contributing to dark current across metal/CdMnTe/metal structures},
author = {Sklyarchuk, Valerii M. and Fochuk, Petro and Solodin, Serhii and Zakharuk, Zinaida and Rarenko, Anna and Bolotnikov, A. E. and James, Ralph B.},
abstractNote = {The study of the electro-physical properties of n-type semi-insulating crystals of indium-doped Cd(Mn)Te solid solution with a resistivity ~ (4÷5)×1010 Ohm×cm at T = 300 K was carried out. The structures both with an ohmic (In/Cd(Mn)Te/In) contacts and with the rectifying (Ni/Cd(Mn)Te/In) contact were fabricated. It was found that for the Ni/Cd(Mn)Te/In structure, the main mechanisms of charge transport were: the generation currents in the space-charge region, space-charge limited currents (SCLC) at high voltages, and the Ohm’s law was valid only on initial section the of the volt-ampere characteristics (I-VC). Calculation of the generation current dependence on the voltage according to the theory of Sah-Noyce-Shockley was carried out. For the In/Cd(Mn)Te/In structure it was observed the I-VC initial section, where the Ohm’s law was implemented, and the SCLCs with the participation of deep centers (traps) in semiinsulating crystal - at greater voltages. The concentration of deep centers (Nt ~ 7.4×1010 cm-3 ) responsible for the trap mechanism in SCLC In/Cd(Mn)Te/In structures was calculated. The energy position Et of the deep levels was determined (provided that the energy was calculated from the valence band edge, Et = 0.89÷0.9 eV). It was discussed and grounded the assumption that SCLC was the main mechanism limiting the operating voltages and, consequently, the use of Cd(Mn)Te-based ionizing-radiation detectors with ohmic contacts.},
doi = {10.1117/12.2530444},
journal = {Proceedings of SPIE - The International Society for Optical Engineering},
number = ,
volume = [11114],
place = {United States},
year = {2019},
month = {9}
}

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