Nano-crystalline p-ZnGa{sub 2}Te{sub 4}/n-Si as a new heterojunction diode

Journal Article · Fri Feb 15 00:00:00 EST 2013 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2012.11.013· OSTI ID:22215850

Sakr, G. B. ^[1]; Fouad, S. S. ^[2]; Abdel Basset, D. M. ^[2]; Yakuphanoglu, F. ^[3]

---

1. Nano-Science Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt)
2. Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt)
3. Physics Department, Faculty of Science and Arts, Firat University, Elazig (Turkey)

Graphical abstract: Display Omitted Highlights: ► ZnGa{sub 2}Te{sub 4}/Si thin film was prepared by thermal evaporation technique. ► XRD and AFM graphs support the nano-crystalline of the studied device. ► Dark current–voltage characteristics of the heterojunction diode were investigated. ► Electrical parameters and conduction mechanism were determined. ► Conduction mechanisms were controlled by TE, SCLC and TCLC. -- Abstract: In this communication, ZnGa{sub 2}Te{sub 4} thin film was prepared by thermal evaporation technique on n-Si substrate. P-ZnGa{sub 2}Te{sub 4}/n-Si heterojunction diode was fabricated. The structure of ZnGa{sub 2}Te{sub 4} thin film was checked by XRD pattern and confirmed by AFM micrographs. The dark current–voltage characteristics of the heterojunction diode were investigated to determine the electrical parameters and conduction mechanism as a function of forward and reverse biasing conditions in the range (−10 V to 10 V) at temperature interval (303–423 K). The conduction mechanism was controlled by thermionic emission, space charge limited (SCLC) and trap-charge limited current (TCLC) mechanisms. The basic parameters such as the series resistance R{sub s}, the shunt resistance R{sub sh}, the ideality factor n and the barrier height φ{sub b} of the diode, the total density of trap states N{sub 0} and the exponential trapping distribution P{sub o} were determined. The obtained results showed that ZnGa{sub 2}Te{sub 4} is a good candidate for the applications of electronic devices.

• OSTI ID: 22215850
• Journal Information: Materials Research Bulletin, Vol. 48, Issue 2; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
ELECTRICAL PROPERTIES
ELECTRONIC EQUIPMENT
EVAPORATION
HETEROJUNCTIONS
NANOSTRUCTURES
THERMIONIC EMISSION
THIN FILMS
X-RAY DIFFRACTION