Mechanisms contributing to dark current across metal/CdMnTe/metal structures
Abstract
The study of the electro-physical properties of n-type semi-insulating crystals of indium-doped Cd(Mn)Te solid solution with a resistivity ~ (4÷5)×1010 Ohm×cm at T = 300 K was carried out. The structures both with an ohmic (In/Cd(Mn)Te/In) contacts and with the rectifying (Ni/Cd(Mn)Te/In) contact were fabricated. It was found that for the Ni/Cd(Mn)Te/In structure, the main mechanisms of charge transport were: the generation currents in the space-charge region, space-charge limited currents (SCLC) at high voltages, and the Ohm’s law was valid only on initial section the of the volt-ampere characteristics (I-VC). Calculation of the generation current dependence on the voltage according to the theory of Sah-Noyce-Shockley was carried out. For the In/Cd(Mn)Te/In structure it was observed the I-VC initial section, where the Ohm’s law was implemented, and the SCLCs with the participation of deep centers (traps) in semiinsulating crystal - at greater voltages. The concentration of deep centers (Nt ~ 7.4×1010 cm-3 ) responsible for the trap mechanism in SCLC In/Cd(Mn)Te/In structures was calculated. The energy position Et of the deep levels was determined (provided that the energy was calculated from the valence band edge, Et = 0.89÷0.9 eV). It was discussed and grounded the assumption that SCLC was the mainmore »
- Authors:
-
- Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)
- Sponsoring Org.:
- USDOE Office of Environmental Management (EM)
- OSTI Identifier:
- 1604906
- Report Number(s):
- SRNL-STI-2019-00484
Journal ID: ISSN 0277-786X; TRN: US2104344
- Grant/Contract Number:
- AC09-08SR22470
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Proceedings of SPIE - The International Society for Optical Engineering
- Additional Journal Information:
- Journal Volume: 11114; Journal ID: ISSN 0277-786X
- Publisher:
- SPIE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Sklyarchuk, Valerii M., Fochuk, Petro, Solodin, Serhii, Zakharuk, Zinaida, Rarenko, Anna, Bolotnikov, A. E., and James, Ralph B. Mechanisms contributing to dark current across metal/CdMnTe/metal structures. United States: N. p., 2019.
Web. doi:10.1117/12.2530444.
Sklyarchuk, Valerii M., Fochuk, Petro, Solodin, Serhii, Zakharuk, Zinaida, Rarenko, Anna, Bolotnikov, A. E., & James, Ralph B. Mechanisms contributing to dark current across metal/CdMnTe/metal structures. United States. https://doi.org/10.1117/12.2530444
Sklyarchuk, Valerii M., Fochuk, Petro, Solodin, Serhii, Zakharuk, Zinaida, Rarenko, Anna, Bolotnikov, A. E., and James, Ralph B. Mon .
"Mechanisms contributing to dark current across metal/CdMnTe/metal structures". United States. https://doi.org/10.1117/12.2530444. https://www.osti.gov/servlets/purl/1604906.
@article{osti_1604906,
title = {Mechanisms contributing to dark current across metal/CdMnTe/metal structures},
author = {Sklyarchuk, Valerii M. and Fochuk, Petro and Solodin, Serhii and Zakharuk, Zinaida and Rarenko, Anna and Bolotnikov, A. E. and James, Ralph B.},
abstractNote = {The study of the electro-physical properties of n-type semi-insulating crystals of indium-doped Cd(Mn)Te solid solution with a resistivity ~ (4÷5)×1010 Ohm×cm at T = 300 K was carried out. The structures both with an ohmic (In/Cd(Mn)Te/In) contacts and with the rectifying (Ni/Cd(Mn)Te/In) contact were fabricated. It was found that for the Ni/Cd(Mn)Te/In structure, the main mechanisms of charge transport were: the generation currents in the space-charge region, space-charge limited currents (SCLC) at high voltages, and the Ohm’s law was valid only on initial section the of the volt-ampere characteristics (I-VC). Calculation of the generation current dependence on the voltage according to the theory of Sah-Noyce-Shockley was carried out. For the In/Cd(Mn)Te/In structure it was observed the I-VC initial section, where the Ohm’s law was implemented, and the SCLCs with the participation of deep centers (traps) in semiinsulating crystal - at greater voltages. The concentration of deep centers (Nt ~ 7.4×1010 cm-3 ) responsible for the trap mechanism in SCLC In/Cd(Mn)Te/In structures was calculated. The energy position Et of the deep levels was determined (provided that the energy was calculated from the valence band edge, Et = 0.89÷0.9 eV). It was discussed and grounded the assumption that SCLC was the main mechanism limiting the operating voltages and, consequently, the use of Cd(Mn)Te-based ionizing-radiation detectors with ohmic contacts.},
doi = {10.1117/12.2530444},
journal = {Proceedings of SPIE - The International Society for Optical Engineering},
number = ,
volume = 11114,
place = {United States},
year = {Mon Sep 09 00:00:00 EDT 2019},
month = {Mon Sep 09 00:00:00 EDT 2019}
}
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Works referenced in this record:
Semiconductors and Semimetals, Vol. 13 (Cadmium Telluride)
journal, August 1978
- Zanio, K.; Pollak, Fred H.
- Physics Today, Vol. 31, Issue 8
Advantages of a Special Post-Growth THM Program for the Reduction of Inclusions in CdTe Crystals
journal, June 2016
- Fochuk, P.; Zakharuk, Z.; Nykonyuk, Ye.
- IEEE Transactions on Nuclear Science, Vol. 63, Issue 3
Improvement of the Productivity in the THM Growth of CdTe Single Crystal as Nuclear Radiation Detector
journal, February 2010
- Shiraki, Hiroyuki; Funaki, Minoru; Ando, Yukio
- IEEE Transactions on Nuclear Science, Vol. 57, Issue 1
Low leakage current Ni/CdZnTe/In diodes for X/ -ray detectors
journal, January 2018
- Sklyarchuk, V. M.; Gnatyuk, V. A.; Pecharapa, W.
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 879
New Approaches for Making Large-Volume and Uniform CdZnTe and CdMnTe Detectors
journal, August 2012
- Kim, K. H.; Bolotnikov, A. E.; Camarda, G. S.
- IEEE Transactions on Nuclear Science, Vol. 59, Issue 4
Fabrication of CdMnTe semiconductor as radiation detector
journal, April 2012
- Najam, L. A.; Jamil, N. Y.; Yousif, R. M.
- Indian Journal of Physics, Vol. 86, Issue 4
Gamma-Ray Response of Semi-Insulating CdMnTe Crystals
journal, June 2009
- Kim, KiHyun; Cho, ShinHang; Suh, JongHee
- IEEE Transactions on Nuclear Science, Vol. 56, Issue 3
Use of the drift-time method to measure the electron lifetime in long-drift-length CdZnTe detectors
journal, September 2016
- Bolotnikov, A. E.; Camarda, G. S.; Chen, E.
- Journal of Applied Physics, Vol. 120, Issue 10
Investigation of the Charge Collection Efficiency of CdMnTe Radiation Detectors
journal, June 2012
- Rafiei, R.; Boardman, D.; Sarbutt, A.
- IEEE Transactions on Nuclear Science, Vol. 59, Issue 3
Compensated donors in semi-insulating Cd1−xMnxTe:In crystals
journal, October 2018
- Nykoniuk, Ye.; Solodin, S.; Zakharuk, Z.
- Journal of Crystal Growth, Vol. 500
Relationship between high resistivity and the deep level defects in CZT:In
journal, March 2013
- Nan, Ruihua; Jie, Wanqi; Zha, Gangqiang
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 705