skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes

Abstract

A dense array of vertically aligned indium antimonide (InSb) nanowires with high aspect ratio (diameter 150 nm, length 20μm) were grown in the pores of a track-etched polycarbonate membrane via a one-step electrochemical method. There are several reports on InSb nanowire growth in the pores of a mechanically rigid, nano-channel alumina template (NCA), where nanowire growth occurs in the pores of the NCA. This work on InSb nanowire growth in pores of track-etched polycarbonate (PC) membrane sheds light on the various factors that affect nucleation and nanowire growth. The average length and diameter of the as-grown nanowires was about 10μm and 150 nm, respectively. Two possible mechanisms accounting for two different morphologies of the as-grown nanowires are proposed. The polycrystallinity observed in some of the nanowires is explained using the 3D ‘nucleation-coalescence’ mechanism. On the other hand, single crystal nanowires with a high density of twin defects and stacking faults grow epitaxially by a two-dimensional (2D) nucleation/growth mechanism. To assess the electrical quality of the nanowires, two- and four-terminal devices were fabricated using a single InSb nanowire contacted by two Ni electrodes. It was found that, at low bias, the ohmic current is controlled by charge diffusion from the bulkmore » contacts. On the other hand, at high bias, the effects of space charge limited current (SCLC) are evident in the current–voltage behavior, characteristic of transport through structures with reduced electrostatic screening. A cross-over from ohmic to SCLC occurs at about 0.14 V, yielding a free carrier concentration of the order of 1014 cm-3.« less

Authors:
ORCiD logo [1]; ORCiD logo [2];  [1];  [3];  [1];  [1]
+ Show Author Affiliations
  1. Univ. of North Texas, Denton, TX (United States)
  2. Univ. of North Texas, Denton, TX (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1561613
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Nanomaterials
Additional Journal Information:
Journal Volume: 9; Journal Issue: 9; Journal ID: ISSN 2079-4991
Publisher:
MDPI
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; polycrytaline InSb nanowire; electrochemical deposition; space charge limited current (SCLC); polycorbonate template

Citation Formats

Singh, Abhay Pratap, Roccapriore, Kevin, Salloom, Riyadh, Golden, Teresa, Philipose, Usha, and Algarni, Zaina. Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes. United States: N. p., 2019. Web. doi:10.3390/nano9091260.
Copy to clipboard
Singh, Abhay Pratap, Roccapriore, Kevin, Salloom, Riyadh, Golden, Teresa, Philipose, Usha, & Algarni, Zaina. Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes. United States. doi:10.3390/nano9091260.
Copy to clipboard
Singh, Abhay Pratap, Roccapriore, Kevin, Salloom, Riyadh, Golden, Teresa, Philipose, Usha, and Algarni, Zaina. Thu . "Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes". United States. doi:10.3390/nano9091260. https://www.osti.gov/servlets/purl/1561613.
Copy to clipboard
@article{osti_1561613,
title = {Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes},
author = {Singh, Abhay Pratap and Roccapriore, Kevin and Salloom, Riyadh and Golden, Teresa and Philipose, Usha and Algarni, Zaina},
abstractNote = {A dense array of vertically aligned indium antimonide (InSb) nanowires with high aspect ratio (diameter 150 nm, length 20μm) were grown in the pores of a track-etched polycarbonate membrane via a one-step electrochemical method. There are several reports on InSb nanowire growth in the pores of a mechanically rigid, nano-channel alumina template (NCA), where nanowire growth occurs in the pores of the NCA. This work on InSb nanowire growth in pores of track-etched polycarbonate (PC) membrane sheds light on the various factors that affect nucleation and nanowire growth. The average length and diameter of the as-grown nanowires was about 10μm and 150 nm, respectively. Two possible mechanisms accounting for two different morphologies of the as-grown nanowires are proposed. The polycrystallinity observed in some of the nanowires is explained using the 3D ‘nucleation-coalescence’ mechanism. On the other hand, single crystal nanowires with a high density of twin defects and stacking faults grow epitaxially by a two-dimensional (2D) nucleation/growth mechanism. To assess the electrical quality of the nanowires, two- and four-terminal devices were fabricated using a single InSb nanowire contacted by two Ni electrodes. It was found that, at low bias, the ohmic current is controlled by charge diffusion from the bulk contacts. On the other hand, at high bias, the effects of space charge limited current (SCLC) are evident in the current–voltage behavior, characteristic of transport through structures with reduced electrostatic screening. A cross-over from ohmic to SCLC occurs at about 0.14 V, yielding a free carrier concentration of the order of 1014 cm-3.},
doi = {10.3390/nano9091260},
journal = {Nanomaterials},
number = 9,
volume = 9,
place = {United States},
year = {2019},
month = {9}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI:  10.3390/nano9091260
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal

Figures / Tables:

Figure 1 Figure 1: Results from cyclic voltammogram showing variation of current with positive (oxidizing) potentials and negative (reducing) potentials. Increasing the negative potential beyond −1.5 V leads to hydrogen evolution.
All figures and tables (11 total)
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Giant, Level-Dependent g Factors in InSb Nanowire Quantum Dots
journal, September 2009

  • Nilsson, Henrik A.; Caroff, Philippe; Thelander, Claes
  • Nano Letters, Vol. 9, Issue 9
  • DOI: 10.1021/nl901333a

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions
journal, April 2016

  • Li, S.; Kang, N.; Fan, D. X.
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep24822

Synthesis of Amorphous InSb Nanowires and a Study of the Effects of Laser Radiation and Thermal Annealing on Nanowire Crystallinity
journal, August 2018

  • Algarni, Zaina; Singh, Abhay; Philipose, Usha
  • Nanomaterials, Vol. 8, Issue 8
  • DOI: 10.3390/nano8080607

Templated electrosynthesis of nanomaterials and porous structures
journal, July 2008

Nanometre-scale electronics with III–V compound semiconductors
journal, November 2011

Raman monitoring of semiconductor growth
journal, June 1994

  • Wagner, V.; Drews, D.; Esser, N.
  • Journal of Applied Physics, Vol. 75, Issue 11
  • DOI: 10.1063/1.356644

The Race of Nanowires: Morphological Instabilities and a Control Strategy
journal, July 2014

  • Shin, Sangwoo; Al-Housseiny, Talal T.; Kim, Beom Seok
  • Nano Letters, Vol. 14, Issue 8
  • DOI: 10.1021/nl501324t

Characterization of InSb Nanoparticles Synthesized Using Inert Gas Condensation
journal, June 2015

Electrodeposition of semiconductors
journal, September 2005

Space-charge-limited current in nanowires
journal, May 2017

  • Alagha, S.; Shik, A.; Ruda, H. E.
  • Journal of Applied Physics, Vol. 121, Issue 17
  • DOI: 10.1063/1.4982222

Room temperature device performance of electrodeposited InSb nanowire field effect transistors
journal, June 2011

  • Das, Suprem R.; Delker, Collin J.; Zakharov, Dmitri
  • Applied Physics Letters, Vol. 98, Issue 24
  • DOI: 10.1063/1.3587638

Infrared detectors: status and trends
journal, January 2003

Nanostructured thermoelectric materials: Current research and future challenge
journal, December 2012

  • Chen, Zhi-Gang; Han, Guang; Yang, Lei
  • Progress in Natural Science: Materials International, Vol. 22, Issue 6
  • DOI: 10.1016/j.pnsc.2012.11.011

High-performance lithium battery anodes using silicon nanowires
journal, December 2007

  • Chan, Candace K.; Peng, Hailin; Liu, Gao
  • Nature Nanotechnology, Vol. 3, Issue 1, p. 31-35
  • DOI: 10.1038/nnano.2007.411

Enhanced thermoelectric performance of rough silicon nanowires
journal, January 2008

  • Hochbaum, Allon I.; Chen, Renkun; Delgado, Raul Diaz
  • Nature, Vol. 451, Issue 7175, p. 163-167
  • DOI: 10.1038/nature06381

Self-powered nanowire devices
journal, March 2010

  • Xu, Sheng; Qin, Yong; Xu, Chen
  • Nature Nanotechnology, Vol. 5, Issue 5, p. 366-373
  • DOI: 10.1038/nnano.2010.46

Raman Scattering from InSb Surfaces at Photon Energies Near the E 1 Energy Gap
journal, October 1968

Electrochemical fabrication of single-crystalline and polycrystalline Au nanowires: the influence of deposition parameters
journal, March 2006

Raman scattering in amorphous Ge and III–V compounds
journal, June 1972

Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks
journal, February 2001

Thermoelectric figure of merit and maximum power factor in III–V semiconductor nanowires
journal, April 2004

Template-based synthesis of nanorod, nanowire, and nanotube arrays
journal, January 2008

  • Cao, Guozhong; Liu, Dawei
  • Advances in Colloid and Interface Science, Vol. 136, Issue 1-2, p. 45-64
  • DOI: 10.1016/j.cis.2007.07.003

Electrochemical Growth of Single-Crystal Metal Nanowires via a Two-Dimensional Nucleation and Growth Mechanism
journal, July 2003

  • Tian, Mingliang; Wang, Jinguo; Kurtz, James
  • Nano Letters, Vol. 3, Issue 7
  • DOI: 10.1021/nl034217d

Low frequency Raman scattering in amorphous materials: a-Ge, a-InSb, and a-Ge0.5Sn0.5
journal, December 1972

Direct Observation of Vapor−Liquid−Solid Nanowire Growth
journal, April 2001

  • Wu, Yiying; Yang, Peidong
  • Journal of the American Chemical Society, Vol. 123, Issue 13, p. 3165-3166
  • DOI: 10.1021/ja0059084

Understanding the Impact of Schottky Barriers on the Performance of Narrow Bandgap Nanowire Field Effect Transistors
journal, September 2012

  • Zhao, Yanjie; Candebat, Drew; Delker, Collin
  • Nano Letters, Vol. 12, Issue 10
  • DOI: 10.1021/nl302684s

Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties
journal, August 2014

  • Das, Suprem R.; Akatay, Cem; Mohammad, Asaduzzaman
  • Journal of Applied Physics, Vol. 116, Issue 8
  • DOI: 10.1063/1.4893704

Growth of nanowire superlattice structures for nanoscale photonics and electronics
journal, February 2002

  • Gudiksen, Mark S.; Lauhon, Lincoln J.; Wang, Jianfang
  • Nature, Vol. 415, Issue 6872, p. 617-620
  • DOI: 10.1038/415617a

An all-in-one nanopore battery array
journal, November 2014

  • Liu, Chanyuan; Gillette, Eleanor I.; Chen, Xinyi
  • Nature Nanotechnology, Vol. 9, Issue 12
  • DOI: 10.1038/nnano.2014.247

Direct Electrodeposition of Highly Dense 50 nm Bi 2 Te 3- y Se y Nanowire Arrays
journal, July 2003

  • Martín-González, Marisol; Snyder, G. Jeffrey; Prieto, Amy L.
  • Nano Letters, Vol. 3, Issue 7
  • DOI: 10.1021/nl034079s

Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires
journal, December 2009

Thermal Transport Measurement Techniques for Nanowires and Nanotubes
journal, January 2013

Field effect transistor based on single crystalline InSb nanowire
journal, January 2011

  • Wang, Yennai; Chi, Junhong; Banerjee, Karan
  • Journal of Materials Chemistry, Vol. 21, Issue 8
  • DOI: 10.1039/c0jm03855e

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156

Fabrication of High-Quality InSb Nanowire Arrays by Chemical Beam Epitaxy
journal, May 2011

  • Vogel, Alexander T.; de Boor, Johannes; Wittemann, Joerg V.
  • Crystal Growth & Design, Vol. 11, Issue 5
  • DOI: 10.1021/cg200066q

Preparation of In X (X = P, As, Sb) Thin Films by Electrochemical Methods
journal, January 1989

  • Ortega, J.
  • Journal of The Electrochemical Society, Vol. 136, Issue 11
  • DOI: 10.1149/1.2096456

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials
journal, July 2009

Second-order Raman scattering in InSb
journal, September 1975

One-dimensional electron transport and thermopower in an individual InSb nanowire
journal, October 2006

Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications
journal, January 2007

  • Ashley, T.; Buckle, L.; Datta, S.
  • Electronics Letters, Vol. 43, Issue 14
  • DOI: 10.1049/el:20071335

Fabrication of Highly Ordered InSb Nanowire Arrays by Electrodeposition in Porous Anodic Alumina Membranes
journal, January 2005

  • Zhang, Xueru; Hao, Yufeng; Meng, Guowen
  • Journal of The Electrochemical Society, Vol. 152, Issue 10
  • DOI: 10.1149/1.2007187

Anomalous Codeposition of Iron Group Metals: I. Experimental Results
journal, January 1999

  • Zech, N.
  • Journal of The Electrochemical Society, Vol. 146, Issue 8
  • DOI: 10.1149/1.1392024
    [ × clear filter / sort ]

    Figures / Tables found in this record:

    Figure 1 (p. 4)figure
    Figure 2 (p. 5)figure
    Figure 3 (p. 6)figure
    Figure 4 (p. 7)figure
    Figure 5 (p. 7)figure
    Figure 6 (p. 8)figure
    Figure 7 (p. 9)figure
    Figure 8 (p. 10)figure
    Figure 10 (p. 11)figure
    Figure 9 (p. 11)figure
    Figure 11 (p. 12)figure
      [ × clear filter / sort ]
      Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

      Similar Records in DOE PAGES and OSTI.GOV collections: