Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes

Singh, Abhay Pratap; Roccapriore, Kevin; Salloom, Riyadh; Golden, Teresa; Philipose, Usha; Algarni, Zaina

doi:10.3390/nano9091260

Title: Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes

Journal Article · 05 September 2019 · Nanomaterials

DOI: https://doi.org/10.3390/nano9091260 · OSTI ID:1561613

^[1];

^[2]; Salloom, Riyadh ^[1]; Golden, Teresa ^[3]; Philipose, Usha ^[1]; Algarni, Zaina ^[1]

Univ. of North Texas, Denton, TX (United States)
Univ. of North Texas, Denton, TX (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

A dense array of vertically aligned indium antimonide (InSb) nanowires with high aspect ratio (diameter 150 nm, length 20_μm) were grown in the pores of a track-etched polycarbonate membrane via a one-step electrochemical method. There are several reports on InSb nanowire growth in the pores of a mechanically rigid, nano-channel alumina template (NCA), where nanowire growth occurs in the pores of the NCA. This work on InSb nanowire growth in pores of track-etched polycarbonate (PC) membrane sheds light on the various factors that affect nucleation and nanowire growth. The average length and diameter of the as-grown nanowires was about 10_μm and 150 nm, respectively. Two possible mechanisms accounting for two different morphologies of the as-grown nanowires are proposed. The polycrystallinity observed in some of the nanowires is explained using the 3D ‘nucleation-coalescence’ mechanism. On the other hand, single crystal nanowires with a high density of twin defects and stacking faults grow epitaxially by a two-dimensional (2D) nucleation/growth mechanism. To assess the electrical quality of the nanowires, two- and four-terminal devices were fabricated using a single InSb nanowire contacted by two Ni electrodes. It was found that, at low bias, the ohmic current is controlled by charge diffusion from the bulk contacts. On the other hand, at high bias, the effects of space charge limited current (SCLC) are evident in the current–voltage behavior, characteristic of transport through structures with reduced electrostatic screening. A cross-over from ohmic to SCLC occurs at about 0.14 V, yielding a free carrier concentration of the order of 10¹⁴ cm^-3.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1561613

Journal Information:: Nanomaterials, Journal Name: Nanomaterials Journal Issue: 9 Vol. 9; ISSN 2079-4991

Publisher:: MDPICopyright Statement

Country of Publication:: United States

Language:: English

References (84)

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Synthesis of Amorphous InSb Nanowires and a Study of the Effects of Laser Radiation and Thermal Annealing on Nanowire Crystallinity Algarni, Zaina; Singh, Abhay; Philipose, Usha Nanomaterials, Vol. 8, Issue 8 https://doi.org/10.3390/nano8080607	journal	August 2018
Characterization and properties of micro- and nanowires of controlled size, composition, and geometry fabricated by electrodeposition and ion-track technology Toimil-Molares, Maria Eugenia Beilstein Journal of Nanotechnology, Vol. 3 https://doi.org/10.3762/bjnano.3.97	journal	January 2012
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Self-powered nanowire devices Xu, Sheng; Qin, Yong; Xu, Chen Nature Nanotechnology, Vol. 5, Issue 5, p. 366-373 https://doi.org/10.1038/nnano.2010.46	journal	March 2010
An all-in-one nanopore battery array Liu, Chanyuan; Gillette, Eleanor I.; Chen, Xinyi Nature Nanotechnology, Vol. 9, Issue 12 https://doi.org/10.1038/nnano.2014.247	journal	November 2014
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Thermoelectric figure of merit and maximum power factor in III–V semiconductor nanowires Mingo, N. Applied Physics Letters, Vol. 84, Issue 14 https://doi.org/10.1063/1.1695629	journal	April 2004
Raman monitoring of semiconductor growth Wagner, V.; Drews, D.; Esser, N. Journal of Applied Physics, Vol. 75, Issue 11 https://doi.org/10.1063/1.356644	journal	June 1994
Room temperature device performance of electrodeposited InSb nanowire field effect transistors Das, Suprem R.; Delker, Collin J.; Zakharov, Dmitri Applied Physics Letters, Vol. 98, Issue 24 https://doi.org/10.1063/1.3587638	journal	June 2011
Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties Das, Suprem R.; Akatay, Cem; Mohammad, Asaduzzaman Journal of Applied Physics, Vol. 116, Issue 8 https://doi.org/10.1063/1.4893704	journal	August 2014
Space-charge-limited current in nanowires Alagha, S.; Shik, A.; Ruda, H. E. Journal of Applied Physics, Vol. 121, Issue 17 https://doi.org/10.1063/1.4982222	journal	May 2017
Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires Zhou, Feng; Moore, Arden L.; Pettes, Michael T. Journal of Physics D: Applied Physics, Vol. 43, Issue 2 https://doi.org/10.1088/0022-3727/43/2/025406	journal	December 2009
One-dimensional electron transport and thermopower in an individual InSb nanowire Zhou, F.; Seol, J. H.; Moore, A. L. Journal of Physics: Condensed Matter, Vol. 18, Issue 42 https://doi.org/10.1088/0953-8984/18/42/011	journal	October 2006
Electrochemical fabrication of single-crystalline and polycrystalline Au nanowires: the influence of deposition parameters Liu, J.; Duan, J. L.; Toimil-Molares, M. E. Nanotechnology, Vol. 17, Issue 8 https://doi.org/10.1088/0957-4484/17/8/020	journal	March 2006
Second-order Raman scattering in InSb Kiefer, W.; Richter, W.; Cardona, M. Physical Review B, Vol. 12, Issue 6 https://doi.org/10.1103/PhysRevB.12.2346	journal	September 1975
Raman Scattering from InSb Surfaces at Photon Energies Near the E 1 Energy Gap Pinczuk, A.; Burstein, E. Physical Review Letters, Vol. 21, Issue 15 https://doi.org/10.1103/PhysRevLett.21.1073	journal	October 1968
Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors Solin, S. A. Science, Vol. 289, Issue 5484 https://doi.org/10.1126/science.289.5484.1530	journal	September 2000
Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks Cui, Yi; Lieber, Charles M. Science, Vol. 291, Issue 5505, p. 851-853 https://doi.org/10.1126/science.291.5505.851	journal	February 2001
High-performance lithium battery anodes using silicon nanowires Chan, Candace K.; Peng, Hailin; Liu, Gao Materials for Sustainable Energy: A Collection of Peer-Reviewed Research and Review Articles from Nature Publishing Group, p. 187-191 https://doi.org/10.1142/9789814317665_0026	book	October 2010
Anomalous Codeposition of Iron Group Metals: I. Experimental Results Zech, N. Journal of The Electrochemical Society, Vol. 146, Issue 8 https://doi.org/10.1149/1.1392024	journal	January 1999
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Preparation of In X (X = P, As, Sb) Thin Films by Electrochemical Methods Ortega, J. Journal of The Electrochemical Society, Vol. 136, Issue 11 https://doi.org/10.1149/1.2096456	journal	January 1989
Characterization of InSb Nanoparticles Synthesized Using Inert Gas Condensation Pandya, Sneha G.; Kordesch, Martin E. Nanoscale Research Letters, Vol. 10, Issue 1 https://doi.org/10.1186/s11671-015-0966-4	journal	June 2015
Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials Heyns, M.; Tsai, W. MRS Bulletin, Vol. 34, Issue 7 https://doi.org/10.1557/mrs2009.136	journal	July 2009
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Synthesis of Amorphous InSb Nanowires and a Study of the Effects of Laser Radiation and Thermal Annealing on Nanowire Crystallinity Algarni, Zaina; Singh, Abhay; Philipose, Usha Nanomaterials, Vol. 8, Issue 8 https://doi.org/10.3390/nano8080607	journal	August 2018
Characterization and properties of micro- and nanowires of controlled size, composition, and geometry fabricated by electrodeposition and ion-track technology Toimil-Molares, Maria Eugenia Beilstein Journal of Nanotechnology, Vol. 3 https://doi.org/10.3762/bjnano.3.97	journal	January 2012
Room Temperature Device Performance of Electrodeposited InSb Nanowire Field Effect Transistors Das, Suprem R.; Delker, Collin J.; Zakharov, Dmitri arXiv https://doi.org/10.48550/arxiv.1104.5436	text	January 2011
Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions Li, S.; Kang, N.; Fan, D. X. arXiv https://doi.org/10.48550/arxiv.1604.01633	text	January 2016

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Title: Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes

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