Super high voltage Schottky diode with low leakage current for x- and {gamma}-ray detector application

Journal Article · Mon Mar 02 00:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3093839· OSTI ID:21176014

Kosyachenko, L A; Sklyarchuk, V M; Sklyarchuk, O F; Maslyanchuk, O L ^[1]; Gnatyuk, V A; Aoki, T ^[2]

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1. Yuriy Fedkovych Chernivtsi National University, 2 Kotsjubynskyi Str., Chernivtsi 58012 (Ukraine)
2. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011 (Japan)

A significant improvement in x-/{gamma}-ray detector performance has been achieved by forming both rectifying and near-Ohmic contacts by the deposition of Ni on opposite surfaces of semi-insulating CdTe crystals pretreated by special chemical etching and Ar-ion bombardment with different parameters. The reduced injection of the minority carriers from the near-Ohmic contact in the neutral part of the diode provides low leakage current even at high bias (<50 nA/cm{sup 2} at 2000 V and 293 K). The electrical properties of the detectors are well described quantitatively by the generation-recombination Sah-Noyce-Shockley theory excepting the high reverse voltage range where some injection of minority carriers takes place.

• OSTI ID: 21176014
• Journal Information: Applied Physics Letters, Vol. 94, Issue 9; Other Information: DOI: 10.1063/1.3093839; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON IONS
CADMIUM TELLURIDES
CHARGE CARRIERS
CRYSTALS
DEPOSITION
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ETCHING
GAMMA DETECTION
GAMMA RADIATION
LEAKAGE CURRENT
NICKEL
RECOMBINATION
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
X-RAY DETECTION