Ionic Gating of Ultrathin and Leaky Ferroelectrics
Abstract
Ionic liquids are used to induce reversible large area polarization switching in ultrathin and highly defective ferroelectric films. Long range electrostatic charge control is induced by modifying the electric double layer at an ionic liquid–PbZr 0.2 Ti 0.8 O 3 interface with electrostatic and electrochemical control of polarization orientation in the ferroelectric layer. The localized nature of the ionic gating mechanism prohibits the presence of leakage current, which has historically limited the switching of ultrathin and/or electrically leaky ferroelectric films in solid metal‐gated capacitor devices. This is demonstrated on ultrathin films and in massively defective films with >30% coverage of direct conducting channels running from surface to ground. This approach opens new design possibilities for integrating ultrathin ferroelectric films in functional electronic devices.
- Authors:
-
[1];
[3];
[1];
[4];
[4];
[1];
[5];
[4];
[6];
[1]
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
- Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
- Martin-Luther-Univ. Halle-Wittenberg, Halle (Germany); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Chemical Sciences Division
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1506780
- Alternate Identifier(s):
- OSTI ID: 1491059
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials Interfaces
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 5; Journal ID: ISSN 2196-7350
- Publisher:
- Wiley-VCH
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Ferroelectrics; ionic gating; ionic liquids; polarization switching; device structure
Citation Formats
Sharma, Yogesh, Wong, Anthony T., Herklotz, Andreas, Lee, Dongkyu, Ievlev, Anton, Collins, Liam F., Lee, Ho Nyung, Dai, Sheng, Wisinger, Nina Balke, Rack, Philip D., and Ward, Thomas Z. Ionic Gating of Ultrathin and Leaky Ferroelectrics. United States: N. p., 2019.
Web. doi:10.1002/admi.201801723.
Sharma, Yogesh, Wong, Anthony T., Herklotz, Andreas, Lee, Dongkyu, Ievlev, Anton, Collins, Liam F., Lee, Ho Nyung, Dai, Sheng, Wisinger, Nina Balke, Rack, Philip D., & Ward, Thomas Z. Ionic Gating of Ultrathin and Leaky Ferroelectrics. United States. https://doi.org/10.1002/admi.201801723
Sharma, Yogesh, Wong, Anthony T., Herklotz, Andreas, Lee, Dongkyu, Ievlev, Anton, Collins, Liam F., Lee, Ho Nyung, Dai, Sheng, Wisinger, Nina Balke, Rack, Philip D., and Ward, Thomas Z. Wed .
"Ionic Gating of Ultrathin and Leaky Ferroelectrics". United States. https://doi.org/10.1002/admi.201801723. https://www.osti.gov/servlets/purl/1506780.
@article{osti_1506780,
title = {Ionic Gating of Ultrathin and Leaky Ferroelectrics},
author = {Sharma, Yogesh and Wong, Anthony T. and Herklotz, Andreas and Lee, Dongkyu and Ievlev, Anton and Collins, Liam F. and Lee, Ho Nyung and Dai, Sheng and Wisinger, Nina Balke and Rack, Philip D. and Ward, Thomas Z.},
abstractNote = {Ionic liquids are used to induce reversible large area polarization switching in ultrathin and highly defective ferroelectric films. Long range electrostatic charge control is induced by modifying the electric double layer at an ionic liquid–PbZr 0.2 Ti 0.8 O 3 interface with electrostatic and electrochemical control of polarization orientation in the ferroelectric layer. The localized nature of the ionic gating mechanism prohibits the presence of leakage current, which has historically limited the switching of ultrathin and/or electrically leaky ferroelectric films in solid metal‐gated capacitor devices. This is demonstrated on ultrathin films and in massively defective films with >30% coverage of direct conducting channels running from surface to ground. This approach opens new design possibilities for integrating ultrathin ferroelectric films in functional electronic devices.},
doi = {10.1002/admi.201801723},
journal = {Advanced Materials Interfaces},
number = 5,
volume = 6,
place = {United States},
year = {Wed Jan 16 00:00:00 EST 2019},
month = {Wed Jan 16 00:00:00 EST 2019}
}
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Works referencing / citing this record:
Self‐Assembled Room Temperature Multiferroic BiFeO 3 ‐LiFe 5 O 8 Nanocomposites
journal, October 2019
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