Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering
Abstract
Abstract The superior size and power scaling potential of ferroelectric-gated Mott transistors makes them promising building blocks for developing energy-efficient memory and logic applications in the post-Moore’s Law era. The close to metallic carrier density in the Mott channel, however, imposes the bottleneck for achieving substantial field effect modulation via a solid-state gate. Previous studies have focused on optimizing the thickness, charge mobility, and carrier density of single-layer correlated channels, which have only led to moderate resistance switching at room temperature. Here, we report a record high nonvolatile resistance switching ratio of 38,440% at 300 K in a prototype Mott transistor consisting of a ferroelectric PbZr 0.2 Ti 0.8 O 3 gate and an R NiO 3 ( R : rare earth)/La 0.67 Sr 0.33 MnO 3 composite channel. The ultrathin La 0.67 Sr 0.33 MnO 3 buffer layer not only tailors the carrier density profile in R NiO 3 through interfacial charge transfer, as corroborated by first-principles calculations, but also provides an extended screening layer that reduces the depolarization effect in the ferroelectric gate. Our study points to an effective material strategy for the functional design of complex oxide heterointerfaces that harnesses the competing roles of charge in field effectmore »
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); National Science Foundation (NSF); Science and Technology Commission of Shanghai Municipality (STCSM); Global Research Collaboration (GRC)
- OSTI Identifier:
- 2229775
- Alternate Identifier(s):
- OSTI ID: 2284067
- Report Number(s):
- BNL-225266-2024-JAAM
Journal ID: ISSN 2041-1723; 8247; PII: 44036
- Grant/Contract Number:
- SC0012704; DMR-1710461; OIA-2044049; ECCS: 2025298; 23ZR1445400; 2831.001
- Resource Type:
- Published Article
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Name: Nature Communications Journal Volume: 14 Journal Issue: 1; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United Kingdom
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Hao, Yifei, Chen, Xuegang, Zhang, Le, Han, Myung-Geun, Wang, Wei, Fang, Yue-Wen, Chen, Hanghui, Zhu, Yimei, and Hong, Xia. Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering. United Kingdom: N. p., 2023.
Web. doi:10.1038/s41467-023-44036-x.
Hao, Yifei, Chen, Xuegang, Zhang, Le, Han, Myung-Geun, Wang, Wei, Fang, Yue-Wen, Chen, Hanghui, Zhu, Yimei, & Hong, Xia. Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering. United Kingdom. https://doi.org/10.1038/s41467-023-44036-x
Hao, Yifei, Chen, Xuegang, Zhang, Le, Han, Myung-Geun, Wang, Wei, Fang, Yue-Wen, Chen, Hanghui, Zhu, Yimei, and Hong, Xia. Tue .
"Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering". United Kingdom. https://doi.org/10.1038/s41467-023-44036-x.
@article{osti_2229775,
title = {Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering},
author = {Hao, Yifei and Chen, Xuegang and Zhang, Le and Han, Myung-Geun and Wang, Wei and Fang, Yue-Wen and Chen, Hanghui and Zhu, Yimei and Hong, Xia},
abstractNote = {Abstract The superior size and power scaling potential of ferroelectric-gated Mott transistors makes them promising building blocks for developing energy-efficient memory and logic applications in the post-Moore’s Law era. The close to metallic carrier density in the Mott channel, however, imposes the bottleneck for achieving substantial field effect modulation via a solid-state gate. Previous studies have focused on optimizing the thickness, charge mobility, and carrier density of single-layer correlated channels, which have only led to moderate resistance switching at room temperature. Here, we report a record high nonvolatile resistance switching ratio of 38,440% at 300 K in a prototype Mott transistor consisting of a ferroelectric PbZr 0.2 Ti 0.8 O 3 gate and an R NiO 3 ( R : rare earth)/La 0.67 Sr 0.33 MnO 3 composite channel. The ultrathin La 0.67 Sr 0.33 MnO 3 buffer layer not only tailors the carrier density profile in R NiO 3 through interfacial charge transfer, as corroborated by first-principles calculations, but also provides an extended screening layer that reduces the depolarization effect in the ferroelectric gate. Our study points to an effective material strategy for the functional design of complex oxide heterointerfaces that harnesses the competing roles of charge in field effect screening and ferroelectric depolarization effects.},
doi = {10.1038/s41467-023-44036-x},
journal = {Nature Communications},
number = 1,
volume = 14,
place = {United Kingdom},
year = {Tue Dec 12 00:00:00 EST 2023},
month = {Tue Dec 12 00:00:00 EST 2023}
}
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