skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors

Abstract

Heteroepitaxial coupling at complex oxide interfaces introduces a powerful tool for engineering the charge degree of freedom in strongly correlated materials, which can be utilized to achieve tailored functionalities that are inaccessible in the bulk form. In this work, the charge-transfer effect between two strongly correlated oxides, Sm0.5Nd0.5NiO3 (SNNO) and La0.67Sr0.33MnO3 (LSMO), is exploited to realize a giant enhancement of the ferroelectric field effect in a prototype Mott field-effect transistor. By switching the polarization field of a ferroelectric Pb(Zr,Ti)O3 (PZT) gate, nonvolatile resistance modulation in the Mott transistors with single-layer SNNO and bilayer SNNO/LSMO channels is induced. For the same channel thickness, the bilayer channels exhibit up to two orders of magnitude higher resistance-switching ratio at 300 K, which is attributed to the intricate interplay between the charge screening at the PZT/SNNO interface and the charge transfer at the SNNO/LSMO interface. X-ray absorption spectroscopy and X-ray photoelectron spectroscopy studies of SNNO/LSMO heterostructures reveal about 0.1 electron per 2D unit cell transferred between the interfacial Mn and Ni layers, which is corroborated by first-principles density functional theory calculations. The study points to an effective strategy to design functional complex oxide interfaces for developing high-performance nanoelectronic and spintronic applications.

Authors:
 [1];  [1];  [1];  [2];  [1];  [1];  [1];  [1]; ORCiD logo [1]
  1. Univ. of Nebraska, Lincoln, NE (United States)
  2. Columbia Univ., New York, NY (United States); New York Univ. Shanghai (China); New York Univ. (NYU), NY (United States)
Publication Date:
Research Org.:
Univ. of Nebraska, Lincoln, NE (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR); USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
OSTI Identifier:
1596912
Alternate Identifier(s):
OSTI ID: 1375058
Grant/Contract Number:  
SC0016153; DMR‐1420645; DMR‐1148783
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 31; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; charge transfer; complex oxide interfaces; ferroelectric field effect; Mott insulators; strongly correlated oxides

Citation Formats

Chen, Xuegang, Zhang, Xin, Koten, Mark A., Chen, Hanghui, Xiao, Zhiyong, Zhang, Le, Shield, Jeffrey E., Dowben, Peter A., and Hong, Xia. Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors. United States: N. p., 2017. Web. doi:10.1002/adma.201701385.
Chen, Xuegang, Zhang, Xin, Koten, Mark A., Chen, Hanghui, Xiao, Zhiyong, Zhang, Le, Shield, Jeffrey E., Dowben, Peter A., & Hong, Xia. Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors. United States. doi:10.1002/adma.201701385.
Chen, Xuegang, Zhang, Xin, Koten, Mark A., Chen, Hanghui, Xiao, Zhiyong, Zhang, Le, Shield, Jeffrey E., Dowben, Peter A., and Hong, Xia. Mon . "Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors". United States. doi:10.1002/adma.201701385. https://www.osti.gov/servlets/purl/1596912.
@article{osti_1596912,
title = {Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors},
author = {Chen, Xuegang and Zhang, Xin and Koten, Mark A. and Chen, Hanghui and Xiao, Zhiyong and Zhang, Le and Shield, Jeffrey E. and Dowben, Peter A. and Hong, Xia},
abstractNote = {Heteroepitaxial coupling at complex oxide interfaces introduces a powerful tool for engineering the charge degree of freedom in strongly correlated materials, which can be utilized to achieve tailored functionalities that are inaccessible in the bulk form. In this work, the charge-transfer effect between two strongly correlated oxides, Sm0.5Nd0.5NiO3 (SNNO) and La0.67Sr0.33MnO3 (LSMO), is exploited to realize a giant enhancement of the ferroelectric field effect in a prototype Mott field-effect transistor. By switching the polarization field of a ferroelectric Pb(Zr,Ti)O3 (PZT) gate, nonvolatile resistance modulation in the Mott transistors with single-layer SNNO and bilayer SNNO/LSMO channels is induced. For the same channel thickness, the bilayer channels exhibit up to two orders of magnitude higher resistance-switching ratio at 300 K, which is attributed to the intricate interplay between the charge screening at the PZT/SNNO interface and the charge transfer at the SNNO/LSMO interface. X-ray absorption spectroscopy and X-ray photoelectron spectroscopy studies of SNNO/LSMO heterostructures reveal about 0.1 electron per 2D unit cell transferred between the interfacial Mn and Ni layers, which is corroborated by first-principles density functional theory calculations. The study points to an effective strategy to design functional complex oxide interfaces for developing high-performance nanoelectronic and spintronic applications.},
doi = {10.1002/adma.201701385},
journal = {Advanced Materials},
number = 31,
volume = 29,
place = {United States},
year = {2017},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Electrostatic modification of novel materials
journal, November 2006

  • Ahn, C. H.; Bhattacharya, A.; Di Ventra, M.
  • Reviews of Modern Physics, Vol. 78, Issue 4, p. 1185-1212
  • DOI: 10.1103/RevModPhys.78.1185

Magnetoelectric Coupling Effects in Multiferroic Complex Oxide Composite Structures
journal, April 2010

  • Vaz, Carlos A. F.; Hoffman, Jason; Ahn, Charles H.
  • Advanced Materials, Vol. 22, Issue 26-27
  • DOI: 10.1002/adma.200904326

Magnetoelectric Devices for Spintronics
journal, July 2014


Nanoscale Electrostatic Manipulation of Magnetic Flux Quanta in Ferroelectric/Superconductor BiFeO 3 / YBa 2 Cu 3 O 7 δ Heterostructures
journal, December 2011

  • Crassous, Arnaud; Bernard, Rozenn; Fusil, Stéphane
  • Physical Review Letters, Vol. 107, Issue 24, Article No. 247002
  • DOI: 10.1103/PhysRevLett.107.247002

Epitaxial all‐perovskite ferroelectric field effect transistor with a memory retention
journal, April 1995

  • Watanabe, Yukio
  • Applied Physics Letters, Vol. 66, Issue 14
  • DOI: 10.1063/1.113362

A field effect transistor based on the Mott transition in a molecular layer
journal, February 1997

  • Zhou, C.; Newns, D. M.; Misewich, J. A.
  • Applied Physics Letters, Vol. 70, Issue 5
  • DOI: 10.1063/1.118285

The chips are down for Moore’s law
journal, February 2016


Examining the screening limit of field effect devices via the metal-insulator transition
journal, April 2005

  • Hong, X.; Posadas, A.; Ahn, C. H.
  • Applied Physics Letters, Vol. 86, Issue 14
  • DOI: 10.1063/1.1897076

Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications
journal, May 2011


Ferroelectric control of a Mott insulator
journal, October 2013

  • Yamada, Hiroyuki; Marinova, Maya; Altuntas, Philippe
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02834

Conduction at a Ferroelectric Interface
journal, November 2014


Magnetoelectric coupling at the EuO/BaTiO 3 interface
journal, April 2013

  • Cao, S.; Liu, P.; Tang, J.
  • Applied Physics Letters, Vol. 102, Issue 17
  • DOI: 10.1063/1.4803492

Effect of strain on ferroelectric field effect in strongly correlated oxide Sm 0.5 Nd 0.5 NiO 3
journal, October 2015

  • Zhang, L.; Chen, X. G.; Gardner, H. J.
  • Applied Physics Letters, Vol. 107, Issue 15
  • DOI: 10.1063/1.4934182

Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration
journal, December 1981

  • Störmer, H. L.; Gossard, A. C.; Wiegmann, W.
  • Applied Physics Letters, Vol. 39, Issue 11
  • DOI: 10.1063/1.92604

Physics of thin-film ferroelectric oxides
journal, October 2005


Origin of the Magnetoelectric Coupling Effect in Pb ( Zr 0.2 Ti 0.8 ) O 3 / La 0.8 Sr 0.2 MnO 3 Multiferroic Heterostructures
journal, March 2010


Ferroelectric control of magnetization in La 1 x Sr x MnO 3 manganites: A first-principles study
journal, July 2012


Thickness-Dependent Crossover from Charge- to Strain-Mediated Magnetoelectric Coupling in Ferromagnetic/Piezoelectric Oxide Heterostructures
journal, December 2013

  • Spurgeon, Steven R.; Sloppy, Jennifer D.; Kepaptsoglou, Despoina Maria (Demie)
  • ACS Nano, Vol. 8, Issue 1
  • DOI: 10.1021/nn405636c

Enhancing interfacial magnetization with a ferroelectric
journal, November 2016


High-Temperature Magnetic Insulating Phase in Ultrathin La 0.67 Sr 0.33 MnO 3 Films
journal, October 2012


Effect of electric field doping on the anisotropic magnetoresistance in doped manganites
journal, November 2006


Tuning the Structure of Nickelates to Achieve Two-Dimensional Electron Conduction
journal, February 2014

  • Kumah, Divine P.; Disa, Ankit S.; Ngai, Joseph H.
  • Advanced Materials, Vol. 26, Issue 12
  • DOI: 10.1002/adma.201304256

Controlled lateral anisotropy in correlated manganite heterostructures by interface-engineered oxygen octahedral coupling
journal, March 2016

  • Liao, Z.; Huijben, M.; Zhong, Z.
  • Nature Materials, Vol. 15, Issue 4
  • DOI: 10.1038/nmat4579

Giant Enhancement of Magnetic Anisotropy in Ultrathin Manganite Films via Nanoscale 1D Periodic Depth Modulation
journal, May 2016


Charge transfer and interfacial magnetism in (LaNiO 3 ) n /(LaMnO 3 ) 2 superlattices
journal, October 2013


Hybridization-controlled charge transfer and induced magnetism at correlated oxide interfaces
journal, January 2016

  • Grisolia, M. N.; Varignon, J.; Sanchez-Santolino, G.
  • Nature Physics, Vol. 12, Issue 5
  • DOI: 10.1038/nphys3627

Engineering Correlation Effects via Artificially Designed Oxide Superlattices
journal, September 2013


Charge transfer across transition-metal oxide interfaces: Emergent conductance and electronic structure
journal, December 2014


Spatial distribution of transferred charges across the heterointerface between perovskite transition metal oxides LaNiO3 and LaMnO3
journal, March 2016

  • Kitamura, Miho; Horiba, Koji; Kobayashi, Masaki
  • Applied Physics Letters, Vol. 108, Issue 11
  • DOI: 10.1063/1.4944418

Dynamical mean-field study of model double-exchange superlattices
journal, January 2006


Probing the metal-insulator transition of NdNiO 3 by electrostatic doping
journal, November 2011

  • Son, Junwoo; Jalan, Bharat; Kajdos, Adam P.
  • Applied Physics Letters, Vol. 99, Issue 19
  • DOI: 10.1063/1.3659310

Charge Transfer and Orbital Reconstruction in Strain-Engineered (La,Sr)MnO 3 /LaNiO 3 Heterostructures
journal, August 2015

  • Peng, Jingjing; Song, Cheng; Li, Fan
  • ACS Applied Materials & Interfaces, Vol. 7, Issue 32
  • DOI: 10.1021/acsami.5b04994

Resolving surface chemical states in XPS analysis of first row transition metals, oxides and hydroxides: Cr, Mn, Fe, Co and Ni
journal, January 2011

  • Biesinger, Mark C.; Payne, Brad P.; Grosvenor, Andrew P.
  • Applied Surface Science, Vol. 257, Issue 7, p. 2717-2730
  • DOI: 10.1016/j.apsusc.2010.10.051

Evolution of electronic structure across the rare-earth RNiO3 series
journal, April 2016

  • Freeland, John W.; van Veenendaal, Michel; Chakhalian, Jak
  • Journal of Electron Spectroscopy and Related Phenomena, Vol. 208
  • DOI: 10.1016/j.elspec.2015.07.006

Polarity compensation in ultra-thin films of complex oxides: The case of a perovskite nickelate
journal, October 2014

  • Middey, S.; Rivero, P.; Meyers, D.
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep06819

Role of Hybridization in Na x CoO 2 and the Effect of Hydration
journal, May 2004


    Works referencing / citing this record:

    Conductive Oxide Interfaces for Field Effect Devices
    journal, June 2019


    Conductive Oxide Interfaces for Field Effect Devices
    journal, June 2019


    Epitaxial growth of perovskite (111) 0.65PMN-0.35PT films directly on wurtzite GaN (0002) surface
    journal, June 2018