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Title: Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy

Abstract

Electric field (E–field) modulation of perpendicular magnetic anisotropy (PMA) switching, in an energy–efficient manner, is of great potential to realize magnetoelectric (ME) memories and other ME devices. Voltage control of the spin–reorientation transition (SRT) that allows the magnetic moment rotating between the out–of–plane and the in–plane direction is thereby crucial. In this work, a remarkable magnetic anisotropy field change up to 1572 Oe is achieved under a small operation voltage of 4 V through ionic liquid (IL) gating control of SRT in Au/[DEME]+[TFSI]/Pt/(Co/Pt)2/Ta capacitor heterostructures at room temperature, corresponding to a large ME coefficient of 378 Oe V–1. As revealed by both ferromagnetic resonance measurements and magnetic domain evolution observation, the magnetization can be switched stably and reversibly between the out–of–plane and in–plane directions via IL gating. The key mechanism, revealed by the first–principles calculation, is that the IL gating process influences the interfacial spin–orbital coupling as well as net Rashba magnetic field between the Co and Pt layers, resulting in the modulation of the SRT and in–plane/out–of–plane magnetization switching. In conclusion, this work demonstrates a unique IL–gated PMA with large ME tunability and paves a way toward IL gating spintronic/electronic devices such as voltage tunable PMA memories.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2];  [1];  [3];  [4];  [2];  [2];  [1]
  1. Xi'an Jiaotong Univ., Xi'an (China)
  2. Tsinghua Univ., Beijing (China)
  3. Xi'an Jiaotong Univ., Xi'an (China); Simon Fraser Univ., Burnaby, BC (Canada)
  4. Argonne National Lab. (ANL), Lemont, IL (United States); The Univ. of Chicago, Chicago, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Natural Science Foundation of China (NNSFC); Natural Science and Engineering Research Council of Canada; USDOE
OSTI Identifier:
1467107
Alternate Identifier(s):
OSTI ID: 1439400
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 30; Journal Issue: 30; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ferromagnetic resonance; ionic liquid gating; perpendicular magnetic anisotropy; spin‐reorientation transition; voltage control of magnetism

Citation Formats

Zhao, Shishun, Wang, Lei, Zhou, Ziyao, Li, Chunlei, Dong, Guohua, Zhang, Le, Peng, Bin, Min, Tai, Hu, Zhongqiang, Ma, Jing, Ren, Wei, Ye, Zuo -Guang, Chen, Wei, Yu, Pu, Nan, Ce -Wen, and Liu, Ming. Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy. United States: N. p., 2018. Web. doi:10.1002/adma.201801639.
Zhao, Shishun, Wang, Lei, Zhou, Ziyao, Li, Chunlei, Dong, Guohua, Zhang, Le, Peng, Bin, Min, Tai, Hu, Zhongqiang, Ma, Jing, Ren, Wei, Ye, Zuo -Guang, Chen, Wei, Yu, Pu, Nan, Ce -Wen, & Liu, Ming. Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy. United States. doi:10.1002/adma.201801639.
Zhao, Shishun, Wang, Lei, Zhou, Ziyao, Li, Chunlei, Dong, Guohua, Zhang, Le, Peng, Bin, Min, Tai, Hu, Zhongqiang, Ma, Jing, Ren, Wei, Ye, Zuo -Guang, Chen, Wei, Yu, Pu, Nan, Ce -Wen, and Liu, Ming. Tue . "Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy". United States. doi:10.1002/adma.201801639. https://www.osti.gov/servlets/purl/1467107.
@article{osti_1467107,
title = {Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy},
author = {Zhao, Shishun and Wang, Lei and Zhou, Ziyao and Li, Chunlei and Dong, Guohua and Zhang, Le and Peng, Bin and Min, Tai and Hu, Zhongqiang and Ma, Jing and Ren, Wei and Ye, Zuo -Guang and Chen, Wei and Yu, Pu and Nan, Ce -Wen and Liu, Ming},
abstractNote = {Electric field (E–field) modulation of perpendicular magnetic anisotropy (PMA) switching, in an energy–efficient manner, is of great potential to realize magnetoelectric (ME) memories and other ME devices. Voltage control of the spin–reorientation transition (SRT) that allows the magnetic moment rotating between the out–of–plane and the in–plane direction is thereby crucial. In this work, a remarkable magnetic anisotropy field change up to 1572 Oe is achieved under a small operation voltage of 4 V through ionic liquid (IL) gating control of SRT in Au/[DEME]+[TFSI]–/Pt/(Co/Pt)2/Ta capacitor heterostructures at room temperature, corresponding to a large ME coefficient of 378 Oe V–1. As revealed by both ferromagnetic resonance measurements and magnetic domain evolution observation, the magnetization can be switched stably and reversibly between the out–of–plane and in–plane directions via IL gating. The key mechanism, revealed by the first–principles calculation, is that the IL gating process influences the interfacial spin–orbital coupling as well as net Rashba magnetic field between the Co and Pt layers, resulting in the modulation of the SRT and in–plane/out–of–plane magnetization switching. In conclusion, this work demonstrates a unique IL–gated PMA with large ME tunability and paves a way toward IL gating spintronic/electronic devices such as voltage tunable PMA memories.},
doi = {10.1002/adma.201801639},
journal = {Advanced Materials},
number = 30,
volume = 30,
place = {United States},
year = {2018},
month = {5}
}

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Cited by: 11 works
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Figures / Tables:

Figure 1 Figure 1: The in situ IL-gating control PMA switching EPR measurement. (a) The schematic of the ionic liquid gating-induced magnetization switching between PMA state A and gating state B in a typical capacitor structure. The arrows illustrate the magnetic moments rotation during the gating process. (b) The schematic of themore » in situ ESR measurement. The blue arrows illustrate the external magnetic field. The closed yellow curves and black curves mark the distribution of the magnetic field component and the electric field component of the TE011 mode microwave, respectively. With the assistance of the rotator, the voltage control magnetic anisotropy is observed in situ at room temperature in nitrogen gas protection. The in-plane direction, in which the magnetic field is parallel to the film plane, is defined as 0 degree. 90 degrees marks the out-of-plane direction. (c) The out-of-plane FMR spectrums observed at initial 0 V (thin red line), 4 V (thin green line) and final 0 V (thin blue line), respectively. The thicker lines demonstrate the Savitzky-Golay smoothing results of the data from thin light lines, correspondingly. The arrows point to the resonance fields. (d) The FMR phase diagram in the PMA gating process. The FMR intensity is plotted as a function of the external magnetic field (H) and the gating voltage (Vg), and scaled by the contour map. The dark black line marks the resonance field (Hr) shifts during the voltage sweeping.« less

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