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Title: Magneto-ionic control of magnetism using a solid-state proton pump

Abstract

Voltage-gated ion transport as a means of manipulating magnetism electrically could enable ultralow-power memory, logic and sensor technologies. Earlier work made use of electric-field-driven O2– displacement to modulate magnetism in thin films by controlling interfacial or bulk oxidation states. However, elevated temperatures are required and chemical and structural changes lead to irreversibility and device degradation. Here we show reversible and non-destructive toggling of magnetic anisotropy at room temperature using a small gate voltage through H+ pumping in all-solid-state heterostructures. We achieve 90° magnetization switching by H+ insertion at a Co/GdOx interface, with no degradation in magnetic properties after >2,000 cycles. We then demonstrate reversible anisotropy gating by hydrogen loading in Pd/Co/Pd heterostructures, making metal–metal interfaces susceptible to voltage control. The hydrogen storage metals Pd and Pt are high spin–orbit coupling materials commonly used to generate perpendicular magnetic anisotropy, Dzyaloshinskii–Moriya interaction, and spin–orbit torques in ferromagnet/heavy-metal heterostructures. Furthermore, our work provides a platform for voltage-controlled spin–orbitronics.

Authors:
 [1];  [1]; ORCiD logo [1];  [2];  [1]; ORCiD logo [3];  [3];  [3];  [1]; ORCiD logo [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1491150
Report Number(s):
BNL-210856-2019-JAAM
Journal ID: ISSN 1476-1122
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Nature Materials
Additional Journal Information:
Journal Volume: 18; Journal Issue: 1; Journal ID: ISSN 1476-1122
Publisher:
Springer Nature - Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Tan, Aik Jun, Huang, Mantao, Avci, Can Onur, Büttner, Felix, Mann, Maxwell, Hu, Wen, Mazzoli, Claudio, Wilkins, Stuart, Tuller, Harry L., and Beach, Geoffrey S. D. Magneto-ionic control of magnetism using a solid-state proton pump. United States: N. p., 2018. Web. doi:10.1038/s41563-018-0211-5.
Tan, Aik Jun, Huang, Mantao, Avci, Can Onur, Büttner, Felix, Mann, Maxwell, Hu, Wen, Mazzoli, Claudio, Wilkins, Stuart, Tuller, Harry L., & Beach, Geoffrey S. D. Magneto-ionic control of magnetism using a solid-state proton pump. United States. doi:10.1038/s41563-018-0211-5.
Tan, Aik Jun, Huang, Mantao, Avci, Can Onur, Büttner, Felix, Mann, Maxwell, Hu, Wen, Mazzoli, Claudio, Wilkins, Stuart, Tuller, Harry L., and Beach, Geoffrey S. D. Mon . "Magneto-ionic control of magnetism using a solid-state proton pump". United States. doi:10.1038/s41563-018-0211-5. https://www.osti.gov/servlets/purl/1491150.
@article{osti_1491150,
title = {Magneto-ionic control of magnetism using a solid-state proton pump},
author = {Tan, Aik Jun and Huang, Mantao and Avci, Can Onur and Büttner, Felix and Mann, Maxwell and Hu, Wen and Mazzoli, Claudio and Wilkins, Stuart and Tuller, Harry L. and Beach, Geoffrey S. D.},
abstractNote = {Voltage-gated ion transport as a means of manipulating magnetism electrically could enable ultralow-power memory, logic and sensor technologies. Earlier work made use of electric-field-driven O2– displacement to modulate magnetism in thin films by controlling interfacial or bulk oxidation states. However, elevated temperatures are required and chemical and structural changes lead to irreversibility and device degradation. Here we show reversible and non-destructive toggling of magnetic anisotropy at room temperature using a small gate voltage through H+ pumping in all-solid-state heterostructures. We achieve 90° magnetization switching by H+ insertion at a Co/GdOx interface, with no degradation in magnetic properties after >2,000 cycles. We then demonstrate reversible anisotropy gating by hydrogen loading in Pd/Co/Pd heterostructures, making metal–metal interfaces susceptible to voltage control. The hydrogen storage metals Pd and Pt are high spin–orbit coupling materials commonly used to generate perpendicular magnetic anisotropy, Dzyaloshinskii–Moriya interaction, and spin–orbit torques in ferromagnet/heavy-metal heterostructures. Furthermore, our work provides a platform for voltage-controlled spin–orbitronics.},
doi = {10.1038/s41563-018-0211-5},
journal = {Nature Materials},
number = 1,
volume = 18,
place = {United States},
year = {2018},
month = {11}
}

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Cited by: 22 works
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