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Title: Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism

Ionic-liquid gating on a functional thin film with a low voltage has drawn a lot of attention due to rich chemical, electronic, and magnetic phenomena at the interface. A key challenge in quantitative determination of voltage-controlled magnetic anisotropy (VCMA) in Au/[DEME] +[TFSI] -/Co field-effect transistor heterostructures is addressed. The magnetic anisotropy change as response to the gating voltage is precisely detected by in situ electron spin resonance measurements. Furthermore, a reversible change of magnetic anisotropy up to 219 Oe is achieved with a low gating voltage of 1.5 V at room temperature, corresponding to a record high VCMA coefficient of ≈146 Oe V -1. Two gating effects, the electrostatic doping and electrochemical reaction, are distinguished at various gating voltage regions, as confirmed by X-ray photoelectron spectroscopy and atomic force microscopy experiments. Our work shows a unique ionic-liquid-gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion-liquid-gating spintronic/electronic devices.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [3] ;  [1]
  1. Xi'an Jiaotong Univ. (China). Electronic Materials Research Lab. and Key Laboratory of the Ministry of Education & International Center for Dielectric Research
  2. Xi'an Jiaotong Univ. (China). Electronic Materials Research Lab. and Key Laboratory of the Ministry of Education & International Center for Dielectric Research; Simon Fraser Univ., Burnaby, BC (Canada). Dept. of Chemistry and 4D Labs
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Quantum Condensed Matter Division
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 17; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1360067

Zhao, Shishun, Zhou, Ziyao, Peng, Bin, Zhu, Mingmin, Feng, Mengmeng, Yang, Qu, Yan, Yuan, Ren, Wei, Ye, Zuo-Guang, Liu, Yaohua, and Liu, Ming. Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism. United States: N. p., Web. doi:10.1002/adma.201606478.
Zhao, Shishun, Zhou, Ziyao, Peng, Bin, Zhu, Mingmin, Feng, Mengmeng, Yang, Qu, Yan, Yuan, Ren, Wei, Ye, Zuo-Guang, Liu, Yaohua, & Liu, Ming. Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism. United States. doi:10.1002/adma.201606478.
Zhao, Shishun, Zhou, Ziyao, Peng, Bin, Zhu, Mingmin, Feng, Mengmeng, Yang, Qu, Yan, Yuan, Ren, Wei, Ye, Zuo-Guang, Liu, Yaohua, and Liu, Ming. 2017. "Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism". United States. doi:10.1002/adma.201606478. https://www.osti.gov/servlets/purl/1360067.
@article{osti_1360067,
title = {Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism},
author = {Zhao, Shishun and Zhou, Ziyao and Peng, Bin and Zhu, Mingmin and Feng, Mengmeng and Yang, Qu and Yan, Yuan and Ren, Wei and Ye, Zuo-Guang and Liu, Yaohua and Liu, Ming},
abstractNote = {Ionic-liquid gating on a functional thin film with a low voltage has drawn a lot of attention due to rich chemical, electronic, and magnetic phenomena at the interface. A key challenge in quantitative determination of voltage-controlled magnetic anisotropy (VCMA) in Au/[DEME]+[TFSI]-/Co field-effect transistor heterostructures is addressed. The magnetic anisotropy change as response to the gating voltage is precisely detected by in situ electron spin resonance measurements. Furthermore, a reversible change of magnetic anisotropy up to 219 Oe is achieved with a low gating voltage of 1.5 V at room temperature, corresponding to a record high VCMA coefficient of ≈146 Oe V-1. Two gating effects, the electrostatic doping and electrochemical reaction, are distinguished at various gating voltage regions, as confirmed by X-ray photoelectron spectroscopy and atomic force microscopy experiments. Our work shows a unique ionic-liquid-gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion-liquid-gating spintronic/electronic devices.},
doi = {10.1002/adma.201606478},
journal = {Advanced Materials},
number = 17,
volume = 29,
place = {United States},
year = {2017},
month = {3}
}

Works referenced in this record:

Electric-field control of local ferromagnetism using a magnetoelectric multiferroic
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  • Chu, Ying-Hao; Martin, Lane W.; Holcomb, Mikel B.
  • Nature Materials, Vol. 7, Issue 6, p. 478-482
  • DOI: 10.1038/nmat2184