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Title: Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

Abstract

The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

Authors:
 [1];  [2];  [1];  [3];  [1]
  1. Department of Physics, East China University of Science and Technology, Shanghai 200237 (China)
  2. Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237 (China)
  3. School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620 (China)
Publication Date:
OSTI Identifier:
22611512
Resource Type:
Journal Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 6; Journal Issue: 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITORS; CONCENTRATION RATIO; DESIGN; ELECTRIC FIELDS; ETHYLENE; FERROELECTRIC MATERIALS; FLUORINATED ALIPHATIC HYDROCARBONS; INTERFACES; LAYERS; LEAKAGE CURRENT; POLARIZATION; POLYVINYLS; PROTONS; RESISTORS; STYRENE; SWITCHES; THIN FILMS

Citation Formats

Liu, ChangLi, Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237, Wang, XueJun, Zhang, XiuLi, School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620, Du, XiaoLi, Xu, HaiSheng, and Kunshan Hisense Electronics Co., Ltd., Kunshan, Jiangsu 215300. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films. United States: N. p., 2016. Web. doi:10.1063/1.4953064.
Liu, ChangLi, Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237, Wang, XueJun, Zhang, XiuLi, School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620, Du, XiaoLi, Xu, HaiSheng, & Kunshan Hisense Electronics Co., Ltd., Kunshan, Jiangsu 215300. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films. United States. https://doi.org/10.1063/1.4953064
Liu, ChangLi, Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237, Wang, XueJun, Zhang, XiuLi, School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620, Du, XiaoLi, Xu, HaiSheng, and Kunshan Hisense Electronics Co., Ltd., Kunshan, Jiangsu 215300. 2016. "Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films". United States. https://doi.org/10.1063/1.4953064.
@article{osti_22611512,
title = {Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films},
author = {Liu, ChangLi and Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237 and Wang, XueJun and Zhang, XiuLi and School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620 and Du, XiaoLi and Xu, HaiSheng and Kunshan Hisense Electronics Co., Ltd., Kunshan, Jiangsu 215300},
abstractNote = {The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.},
doi = {10.1063/1.4953064},
url = {https://www.osti.gov/biblio/22611512}, journal = {AIP Advances},
issn = {2158-3226},
number = 5,
volume = 6,
place = {United States},
year = {2016},
month = {5}
}