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Title: Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures

Abstract

The effect of gate voltage polarity on the behavior of NdNiO3 epitaxial thin films during ionic liquid gating is studied using in situ synchrotron X-ray techniques. We show that while negative biases have no discernible effect on the structure or composition of the films, large positive gate voltages result in the injection of a large concentration of oxygen vacancies (similar to 3%) and pronounced lattice expansion (0.17%) in addition to a 1000-fold increase in sheet resistance at room temperature. Despite the creation of large defect densities, the heterostructures exhibit a largely reversible switching behavior when sufficient time is provided for the vacancies to migrate in and out of the thin film surface. The results confirm that electrostatic gating takes place at negative gate voltages for p-type complex oxides while positive voltages favor the electrochemical reduction of Ni3+. Switching between positive and negative gate voltages therefore involves a combination of electronic and ionic doping processes that may be utilized in future electrochemical transistors.

Authors:
 [1];  [2];  [3];  [4];  [5];  [2];  [3]
  1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, China, Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
  2. High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
  3. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, China
  4. Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
  5. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Key Basic Research Program of China; National Natural Science Foundation of China (NNSFC); China Scholarship Council
OSTI Identifier:
1361896
Alternate Identifier(s):
OSTI ID: 1372506; OSTI ID: 1374714
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Name: APL Materials Journal Volume: 5 Journal Issue: 5; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Dong, Yongqi, Xu, Haoran, Luo, Zhenlin, Zhou, Hua, Fong, Dillon D., Wu, Wenbin, and Gao, Chen. Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures. United States: N. p., 2017. Web. doi:10.1063/1.4983617.
Dong, Yongqi, Xu, Haoran, Luo, Zhenlin, Zhou, Hua, Fong, Dillon D., Wu, Wenbin, & Gao, Chen. Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures. United States. doi:10.1063/1.4983617.
Dong, Yongqi, Xu, Haoran, Luo, Zhenlin, Zhou, Hua, Fong, Dillon D., Wu, Wenbin, and Gao, Chen. Tue . "Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures". United States. doi:10.1063/1.4983617.
@article{osti_1361896,
title = {Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures},
author = {Dong, Yongqi and Xu, Haoran and Luo, Zhenlin and Zhou, Hua and Fong, Dillon D. and Wu, Wenbin and Gao, Chen},
abstractNote = {The effect of gate voltage polarity on the behavior of NdNiO3 epitaxial thin films during ionic liquid gating is studied using in situ synchrotron X-ray techniques. We show that while negative biases have no discernible effect on the structure or composition of the films, large positive gate voltages result in the injection of a large concentration of oxygen vacancies (similar to 3%) and pronounced lattice expansion (0.17%) in addition to a 1000-fold increase in sheet resistance at room temperature. Despite the creation of large defect densities, the heterostructures exhibit a largely reversible switching behavior when sufficient time is provided for the vacancies to migrate in and out of the thin film surface. The results confirm that electrostatic gating takes place at negative gate voltages for p-type complex oxides while positive voltages favor the electrochemical reduction of Ni3+. Switching between positive and negative gate voltages therefore involves a combination of electronic and ionic doping processes that may be utilized in future electrochemical transistors.},
doi = {10.1063/1.4983617},
journal = {APL Materials},
number = 5,
volume = 5,
place = {United States},
year = {2017},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4983617

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Works referenced in this record:

Strain controlled metal-insulator transition in epitaxial NdNiO 3 thin films
journal, December 2013

  • Xiang, P. -H.; Zhong, N.; Duan, C. -G.
  • Journal of Applied Physics, Vol. 114, Issue 24
  • DOI: 10.1063/1.4858455

Anisotropic-strain-controlled metal-insulator transition in epitaxial NdNiO 3 films grown on orthorhombic NdGaO 3 substrates
journal, October 2013

  • Lian, X. K.; Chen, F.; Tan, X. L.
  • Applied Physics Letters, Vol. 103, Issue 17
  • DOI: 10.1063/1.4826678

On Activity and Stability of Rhombohedral LaNiO3 Catalyst towards ORR and OER in Alkaline Electrolyte
journal, January 2015

  • Sakthivel, M.; Bhandari, S.; Drillet, J. -F.
  • ECS Electrochemistry Letters, Vol. 4, Issue 6
  • DOI: 10.1149/2.0081506eel

Strongly correlated perovskite fuel cells
journal, May 2016


Effects of Nonequilibrium Growth, Nonstoichiometry, and Film Orientation on the Metal-to-Insulator Transition in NdNiO 3 Thin Films
journal, December 2014

  • Breckenfeld, Eric; Chen, Zuhuang; Damodaran, Anoop. R.
  • ACS Applied Materials & Interfaces, Vol. 6, Issue 24
  • DOI: 10.1021/am506436s

Correlation between stoichiometry, strain, and metal-insulator transitions of NdNiO 3 films
journal, March 2015

  • Hauser, Adam J.; Mikheev, Evgeny; Moreno, Nelson E.
  • Applied Physics Letters, Vol. 106, Issue 9
  • DOI: 10.1063/1.4914002

Structural, magnetic and electronic properties of perovskites (R = rare earth)
journal, February 1997


Heterointerface engineered electronic and magnetic phases of NdNiO3 thin films
journal, November 2013

  • Liu, Jian; Kargarian, Mehdi; Kareev, Mikhail
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms3714

Oxygen Nonstoichiometry and Electrochemical Properties of LaNiO3- 
journal, April 2015

  • Budiman, R. A.; Hashimoto, S. -i.; Nakamura, T.
  • ECS Transactions, Vol. 66, Issue 2
  • DOI: 10.1149/06602.0177ecst

Tailoring the electronic transitions of NdNiO 3 films through (111) pc oriented interfaces
journal, June 2015

  • Catalano, S.; Gibert, M.; Bisogni, V.
  • APL Materials, Vol. 3, Issue 6
  • DOI: 10.1063/1.4919803

Effects of Concentration, Crystal Structure, Magnetism, and Electronic Structure Method on First-Principles Oxygen Vacancy Formation Energy Trends in Perovskites
journal, November 2014

  • Curnan, Matthew T.; Kitchin, John R.
  • The Journal of Physical Chemistry C, Vol. 118, Issue 49
  • DOI: 10.1021/jp507957n

Transport properties of NdNiO3 thin films made by pulsed-laser deposition
journal, January 2000

  • Catalan, G.; Bowman, R. M.; Gregg, J. M.
  • Journal of Applied Physics, Vol. 87, Issue 1
  • DOI: 10.1063/1.371912

A correlated nickelate synaptic transistor
journal, October 2013

  • Shi, Jian; Ha, Sieu D.; Zhou, You
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms3676

High-precision absolute lattice parameter determination of SrTiO 3 , DyScO 3 and NdGaO 3 single crystals
journal, January 2012

  • Schmidbauer, Martin; Kwasniewski, Albert; Schwarzkopf, Jutta
  • Acta Crystallographica Section B Structural Science, Vol. 68, Issue 1
  • DOI: 10.1107/s0108768111046738

Electric-Field Control of the Metal-Insulator Transition in Ultrathin NdNiO3 Films
journal, October 2010

  • Scherwitzl, Raoul; Zubko, Pavlo; Lezama, I. Gutierrez
  • Advanced Materials, Vol. 22, Issue 48
  • DOI: 10.1002/adma.201003241

Strain dependent stabilization of metallic paramagnetic state in epitaxial NdNiO 3 thin films
journal, September 2012

  • Kumar, Yogesh; Choudhary, R. J.; Sharma, S. K.
  • Applied Physics Letters, Vol. 101, Issue 13
  • DOI: 10.1063/1.4754593

Enhanced Bifunctional Oxygen Catalysis in Strained LaNiO 3 Perovskites
journal, February 2016

  • Petrie, Jonathan R.; Cooper, Valentino R.; Freeland, John W.
  • Journal of the American Chemical Society, Vol. 138, Issue 8
  • DOI: 10.1021/jacs.5b11713

Oxygen nonstoichiometry of NdNiO3−δ and SmNiO3−δ
journal, May 2004


An Emergent Change of Phase for Electronics
journal, March 2010


Ab initio energetics of La B O 3 ( 001 ) ( B = Mn , Fe, Co, and Ni) for solid oxide fuel cell cathodes
journal, December 2009


Mott Memory and Neuromorphic Devices
journal, August 2015


Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating
journal, October 2014

  • Yi, Hee Taek; Gao, Bin; Xie, Wei
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep06604

Crystal structures and phase transitions of orthorhombic and rhombohedral RGaO 3 (R=La,Pr,Nd) investigated by neutron powder diffraction
journal, January 1994


The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates
journal, March 2015

  • Bubel, Simon; Hauser, Adam J.; Glaudell, Anne M.
  • Applied Physics Letters, Vol. 106, Issue 12
  • DOI: 10.1063/1.4915269

Phase transformation mechanism in lithium manganese nickel oxide revealed by single-crystal hard X-ray microscopy
journal, February 2017

  • Kuppan, Saravanan; Xu, Yahong; Liu, Yijin
  • Nature Communications, Vol. 8, Issue 1
  • DOI: 10.1038/ncomms14309

Direct Observation of Charge Order in an Epitaxial NdNiO 3 Film
journal, March 2002


Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating
journal, August 2016

  • Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep32378

Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO 3 (001) by Oxygen
journal, September 2013

  • Li, Mingyang; Han, Wei; Jiang, Xin
  • Nano Letters, Vol. 13, Issue 10
  • DOI: 10.1021/nl402088f

Neuromimetic Circuits with Synaptic Devices Based on Strongly Correlated Electron Systems
journal, December 2014


Electrostatic Gating of Ultrathin Films
journal, July 2014


Structural effects of LaNiO3 as electrocatalyst for the oxygen reduction reaction
journal, April 2017

  • Retuerto, María; Pereira, Amaru González; Pérez-Alonso, Francisco J.
  • Applied Catalysis B: Environmental, Vol. 203
  • DOI: 10.1016/j.apcatb.2016.10.016

Chemical Expansion: Implications for Electrochemical Energy Storage and Conversion Devices
journal, July 2014


Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping
journal, September 2014

  • Shi, Jian; Zhou, You; Ramanathan, Shriram
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5860

Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films
journal, October 2010

  • Asanuma, S.; Xiang, P. -H.; Yamada, H.
  • Applied Physics Letters, Vol. 97, Issue 14
  • DOI: 10.1063/1.3496458

Space Charge Induced Surface Stresses: Implications in Ceria and Other Ionic Solids
journal, May 2011


    Works referencing / citing this record:

    Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO 3
    journal, July 2019


    Interfacial Octahedral Manipulation Imparts Hysteresis‐Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure
    journal, July 2019

    • Dong, Yongqi; Ma, Zhiyuan; Luo, Zhenlin
    • Advanced Materials Interfaces, Vol. 6, Issue 17
    • DOI: 10.1002/admi.201900644

    Interfacial Octahedral Manipulation Imparts Hysteresis‐Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure
    journal, July 2019

    • Dong, Yongqi; Ma, Zhiyuan; Luo, Zhenlin
    • Advanced Materials Interfaces, Vol. 6, Issue 17
    • DOI: 10.1002/admi.201900644

    Carrier localization in perovskite nickelates from oxygen vacancies
    journal, October 2019

    • Kotiuga, Michele; Zhang, Zhen; Li, Jiarui
    • Proceedings of the National Academy of Sciences, Vol. 116, Issue 44
    • DOI: 10.1073/pnas.1910490116

    Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO 3
    journal, July 2019