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Title: Damage buildup in Ar-ion-irradiated 3 C-SiC at elevated temperatures

Above room temperature, the accumulation of radiation damage in 3 C-SiC is strongly influenced by dynamic defect interaction processes and remains poorly understood. Here, we use a combination of ion channeling and transmission electron microscopy to study lattice disorder in 3 C-SiC irradiated with 500 keV Ar ions in the temperature range of 25–250 °C. Results reveal sigmoidal damage buildup for all the temperatures studied. For 150 °C and below, the damage level monotonically increases with ion dose up to amorphization. Starting at 200 °C, the shape of damage–depth profiles becomes anomalous, with the damage peak narrowing and moving to larger depths and an additional shoulder forming close to the ion end of range. As a result, damage buildup curves for 200 and 250 °C exhibit an anomalous two-step shape, with a damage saturation stage followed by rapid amorphization above a critical ion dose, suggesting a nucleation-limited amorphization behavior. Despite their complexity, all damage buildup curves are well described by a phenomenological model based on an assumption of a linear dependence of the effective amorphization cross section on ion dose. Here, in contrast to the results of previous studies, 3 C-SiC can be amorphized by bombardment with 500 keV Armore » ions even at 250 °C with a relatively large dose rate of ~2×10 13 cm -2 s -1, revealing a dominant role of defect interaction dynamics at elevated temperatures.« less
Authors:
 [1] ;  [2] ; ORCiD logo [2] ;  [3] ;  [2]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  3. Texas A & M Univ., College Station, TX (United States)
Publication Date:
Report Number(s):
LLNL-JRNL-673338
Journal ID: ISSN 0021-8979
Grant/Contract Number:
AC52-07NA27344
Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 10; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1410026

Wallace, J. B., Bayu Aji, L. B., Li, T. T., Shao, L., and Kucheyev, S. O.. Damage buildup in Ar-ion-irradiated 3C-SiC at elevated temperatures. United States: N. p., Web. doi:10.1063/1.4929953.
Wallace, J. B., Bayu Aji, L. B., Li, T. T., Shao, L., & Kucheyev, S. O.. Damage buildup in Ar-ion-irradiated 3C-SiC at elevated temperatures. United States. doi:10.1063/1.4929953.
Wallace, J. B., Bayu Aji, L. B., Li, T. T., Shao, L., and Kucheyev, S. O.. 2015. "Damage buildup in Ar-ion-irradiated 3C-SiC at elevated temperatures". United States. doi:10.1063/1.4929953. https://www.osti.gov/servlets/purl/1410026.
@article{osti_1410026,
title = {Damage buildup in Ar-ion-irradiated 3C-SiC at elevated temperatures},
author = {Wallace, J. B. and Bayu Aji, L. B. and Li, T. T. and Shao, L. and Kucheyev, S. O.},
abstractNote = {Above room temperature, the accumulation of radiation damage in 3C-SiC is strongly influenced by dynamic defect interaction processes and remains poorly understood. Here, we use a combination of ion channeling and transmission electron microscopy to study lattice disorder in 3C-SiC irradiated with 500 keV Ar ions in the temperature range of 25–250 °C. Results reveal sigmoidal damage buildup for all the temperatures studied. For 150 °C and below, the damage level monotonically increases with ion dose up to amorphization. Starting at 200 °C, the shape of damage–depth profiles becomes anomalous, with the damage peak narrowing and moving to larger depths and an additional shoulder forming close to the ion end of range. As a result, damage buildup curves for 200 and 250 °C exhibit an anomalous two-step shape, with a damage saturation stage followed by rapid amorphization above a critical ion dose, suggesting a nucleation-limited amorphization behavior. Despite their complexity, all damage buildup curves are well described by a phenomenological model based on an assumption of a linear dependence of the effective amorphization cross section on ion dose. Here, in contrast to the results of previous studies, 3C-SiC can be amorphized by bombardment with 500 keV Ar ions even at 250 °C with a relatively large dose rate of ~2×1013 cm-2 s-1, revealing a dominant role of defect interaction dynamics at elevated temperatures.},
doi = {10.1063/1.4929953},
journal = {Journal of Applied Physics},
number = 10,
volume = 118,
place = {United States},
year = {2015},
month = {9}
}

Works referenced in this record: