Damage buildup in Ar-ion-irradiated 3C-SiC at elevated temperatures

Wallace, J. B.; Bayu Aji, L. B.; Li, T. T.; Shao, L.; Kucheyev, S. O.

doi:10.1063/1.4929953

Title: Damage buildup in Ar-ion-irradiated 3C-SiC at elevated temperatures

Abstract

Above room temperature, the accumulation of radiation damage in 3C-SiC is strongly influenced by dynamic defect interaction processes and remains poorly understood. Here, we use a combination of ion channeling and transmission electron microscopy to study lattice disorder in 3C-SiC irradiated with 500 keV Ar ions in the temperature range of 25–250 °C. Results reveal sigmoidal damage buildup for all the temperatures studied. For 150 °C and below, the damage level monotonically increases with ion dose up to amorphization. Starting at 200 °C, the shape of damage–depth profiles becomes anomalous, with the damage peak narrowing and moving to larger depths and an additional shoulder forming close to the ion end of range. As a result, damage buildup curves for 200 and 250 °C exhibit an anomalous two-step shape, with a damage saturation stage followed by rapid amorphization above a critical ion dose, suggesting a nucleation-limited amorphization behavior. Despite their complexity, all damage buildup curves are well described by a phenomenological model based on an assumption of a linear dependence of the effective amorphization cross section on ion dose. Here, in contrast to the results of previous studies, 3C-SiC can be amorphized by bombardment with 500 keV Ar ions even atmore »« less

Authors:

Wallace, J. B. ^[1]; Bayu Aji, L. B. ^[2];

^[2]; Shao, L. ^[3]; Kucheyev, S. O. ^[2]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Texas A & M Univ., College Station, TX (United States)

Publication Date:: Mon Sep 14 00:00:00 EDT 2015

Research Org.:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1410026

Report Number(s):: LLNL-JRNL-673338
Journal ID: ISSN 0021-8979

Grant/Contract Number:: AC52-07NA27344

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 118; Journal Issue: 10; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Wallace, J. B., Bayu Aji, L. B., Li, T. T., Shao, L., and Kucheyev, S. O. Damage buildup in Ar-ion-irradiated 3C-SiC at elevated temperatures.  United States: N. p., 2015. 
Web.  doi:10.1063/1.4929953.

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                    Wallace, J. B., Bayu Aji, L. B., Li, T. T., Shao, L., & Kucheyev, S. O. Damage buildup in Ar-ion-irradiated 3C-SiC at elevated temperatures.  United States.  https://doi.org/10.1063/1.4929953

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                    Wallace, J. B., Bayu Aji, L. B., Li, T. T., Shao, L., and Kucheyev, S. O. Mon .  
"Damage buildup in Ar-ion-irradiated 3C-SiC at elevated temperatures".  United States.  https://doi.org/10.1063/1.4929953.  https://www.osti.gov/servlets/purl/1410026.

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@article{osti_1410026,

  title        = {Damage buildup in Ar-ion-irradiated 3C-SiC at elevated temperatures},

  author       = {Wallace, J. B. and Bayu Aji, L. B. and Li, T. T. and Shao, L. and Kucheyev, S. O.},

  abstractNote = {Above room temperature, the accumulation of radiation damage in 3C-SiC is strongly influenced by dynamic defect interaction processes and remains poorly understood. Here, we use a combination of ion channeling and transmission electron microscopy to study lattice disorder in 3C-SiC irradiated with 500 keV Ar ions in the temperature range of 25–250 °C. Results reveal sigmoidal damage buildup for all the temperatures studied. For 150 °C and below, the damage level monotonically increases with ion dose up to amorphization. Starting at 200 °C, the shape of damage–depth profiles becomes anomalous, with the damage peak narrowing and moving to larger depths and an additional shoulder forming close to the ion end of range. As a result, damage buildup curves for 200 and 250 °C exhibit an anomalous two-step shape, with a damage saturation stage followed by rapid amorphization above a critical ion dose, suggesting a nucleation-limited amorphization behavior. Despite their complexity, all damage buildup curves are well described by a phenomenological model based on an assumption of a linear dependence of the effective amorphization cross section on ion dose. Here, in contrast to the results of previous studies, 3C-SiC can be amorphized by bombardment with 500 keV Ar ions even at 250 °C with a relatively large dose rate of ~2×1013 cm-2 s-1, revealing a dominant role of defect interaction dynamics at elevated temperatures.},

  doi          = {10.1063/1.4929953},

  journal      = {Journal of Applied Physics},

  number       = 10,

  volume       = 118,

  place        = {United States},

  year         = {Mon Sep 14 00:00:00 EDT 2015},

  month        = {Mon Sep 14 00:00:00 EDT 2015}

}

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Works referencing / citing this record:

Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling
journal, December 2018

Bayu Aji, L. B.; Stavrou, E.; Wallace, J. B.
Applied Physics A, Vol. 125, Issue 1
DOI: 10.1007/s00339-018-2325-7

Radiation defect dynamics in SiC with pre-existing defects
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Journal of Applied Physics, Vol. 125, Issue 23
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DOI: 10.1038/s41598-017-17781-5

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Title: Damage buildup in Ar-ion-irradiated 3C-SiC at elevated temperatures

Abstract

Citation Formats

Damage formation in SiC ion implanted at 625K journal, September 2012

Electron-irradiation-induced crystalline-to-amorphous transition in β-SiC single crystals journal, January 1992

The temperature dependence of ion-beam-induced amorphization in β-SiC journal, December 1995

Nanoscale engineering of radiation tolerant silicon carbide journal, January 2012

Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis journal, January 2002

Ion-beam-produced structural defects in ZnO journal, March 2003

Handbook of SiC properties for fuel performance modeling journal, September 2007

Some new aspects for the evaluation of disorder profiles in silicon by backscattering journal, January 1973

High temperature ion implantation of silicon carbide journal, March 1995

Atomic scale simulation of defect production in irradiated 3C-SiC journal, September 2001

Models and mechanisms of irradiation-induced amorphization in ceramics journal, May 2000

Bubbles in SiC crystals formed by helium ion irradiation at high temperatures journal, December 1988

Ion implantation in semiconductors—Part II: Damage production and annealing journal, January 1972

Monte Carlo simulations of defect recovery within a 10 keV collision cascade in 3C–SiC journal, November 2007

Ab initio based rate theory model of radiation induced amorphization in β-SiC journal, July 2011

Radiation-induced amorphization and swelling in ceramics journal, March 1991

Damage accumulation in nitrogen implanted 6H‐SiC: Dependence on the direction of ion incidence and on the ion fluence journal, January 2007

Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties journal, May 2003

Irradiation-induced amorphization in β-SiC journal, March 1998

Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals journal, October 2010

Temperature dependence of disorder accumulation and amorphization in Au-ion-irradiated 6 H − Si C journal, October 2004

Influence of irradiation spectrum and implanted ions on the amorphization of ceramics journal, August 1996

Structure and properties of ion-beam-modified (6H) silicon carbide journal, September 1998

Temperature dependence of damage formation in Ag ion irradiated 4H-SiC journal, October 2010

SRIM – The stopping and range of ions in matter (2010) journal, June 2010

Effects of implantation temperature on damage accumulation in Al-implanted 4H–SiC journal, April 2004

In situ laser reflectometry study of the amorphization of silicon carbide by MeV ion implantation journal, September 1998

Damage accumulation and defect relaxation in 4 H − SiC journal, September 2004

Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide journal, December 2014

Electron‐beam‐induced crystallization of isolated amorphous regions in Si, Ge, GaP, and GaAs journal, July 1995

Temperature and dose dependence of ion-beam-induced amorphization in α-SiC journal, April 1997

Damage buildup in GaN under ion bombardment journal, September 2000

Time constant of defect relaxation in ion-irradiated 3C-SiC journal, May 2015

Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling journal, December 2018

Radiation defect dynamics in SiC with pre-existing defects journal, June 2019

Fractal analysis of collision cascades in pulsed-ion-beam-irradiated solids journal, December 2017

Damage formation in SiC ion implanted at 625K
journal, September 2012

Electron-irradiation-induced crystalline-to-amorphous transition in β-SiC single crystals
journal, January 1992

The temperature dependence of ion-beam-induced amorphization in β-SiC
journal, December 1995

Nanoscale engineering of radiation tolerant silicon carbide
journal, January 2012

Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis
journal, January 2002

Ion-beam-produced structural defects in ZnO
journal, March 2003

Handbook of SiC properties for fuel performance modeling
journal, September 2007

Some new aspects for the evaluation of disorder profiles in silicon by backscattering
journal, January 1973

High temperature ion implantation of silicon carbide
journal, March 1995

Atomic scale simulation of defect production in irradiated 3C-SiC
journal, September 2001

Models and mechanisms of irradiation-induced amorphization in ceramics
journal, May 2000

Bubbles in SiC crystals formed by helium ion irradiation at high temperatures
journal, December 1988

Ion implantation in semiconductors—Part II: Damage production and annealing
journal, January 1972

Monte Carlo simulations of defect recovery within a 10 keV collision cascade in 3C–SiC
journal, November 2007

Ab initio based rate theory model of radiation induced amorphization in β-SiC
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Radiation-induced amorphization and swelling in ceramics
journal, March 1991

Damage accumulation in nitrogen implanted 6H‐SiC: Dependence on the direction of ion incidence and on the ion fluence
journal, January 2007

Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
journal, May 2003

Irradiation-induced amorphization in β-SiC
journal, March 1998

Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals
journal, October 2010

Temperature dependence of disorder accumulation and amorphization in Au-ion-irradiated $6 H − Si C$
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Influence of irradiation spectrum and implanted ions on the amorphization of ceramics
journal, August 1996

Structure and properties of ion-beam-modified (6H) silicon carbide
journal, September 1998

Temperature dependence of damage formation in Ag ion irradiated 4H-SiC
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SRIM – The stopping and range of ions in matter (2010)
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Effects of implantation temperature on damage accumulation in Al-implanted 4H–SiC
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In situ laser reflectometry study of the amorphization of silicon carbide by MeV ion implantation
journal, September 1998

Damage accumulation and defect relaxation in $4 H − SiC$
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Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide
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Electron‐beam‐induced crystallization of isolated amorphous regions in Si, Ge, GaP, and GaAs
journal, July 1995

Temperature and dose dependence of ion-beam-induced amorphization in α-SiC
journal, April 1997

Damage buildup in GaN under ion bombardment
journal, September 2000

Time constant of defect relaxation in ion-irradiated 3C-SiC
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Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling
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