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Title: Damage accumulation in nitrogen implanted 6H-SiC: Dependence on the direction of ion incidence and on the ion fluence

Abstract

The influence of crystallographic orientation and ion fluence on the shape of damage distributions induced by 500 keV N{sup +} implantation at room temperature into 6H-SiC is investigated. The irradiation was performed at different tilt angles between 0 degree sign and 4 degree sign with respect to the <0001> crystallographic axis in order to consider the whole range of beam alignment from channeling to random conditions. The applied implantation fluence range was 2.5x10{sup 14}-3x10{sup 15} cm{sup -2}. A special analytical method, 3.55 MeV {sup 4}He{sup +} ion backscattering analysis in combination with channeling technique (BS/C), was employed to measure the disorder accumulation simultaneously in the Si and C sublattices of SiC with good depth resolution. For correct energy to depth conversion in the BS/C spectra, the average electronic energy loss per analyzing He ion for the <0001> axial channeling direction was determined. It was found that the tilt angle of nitrogen implantation has strong influence on the shape of the induced disorder profiles. Significantly lower disorder was found for channeling than for random irradiation. Computer simulation of the measured BS/C spectra showed the presence of a simple defect structure in weakly damaged samples and suggested the formation of a complexmore » disorder state for higher disorder levels. Full-cascade atomistic computer simulation of the ion implantation process was performed to explain the differences in disorder accumulation on the Si and C sublattices. The damage buildup mechanism was interpreted with the direct-impact, defect-stimulated amorphization model in order to understand damage formation and to describe the composition of structural disorder versus the ion fluence and the implantation tilt angle.« less

Authors:
; ; ; ; ; ; ;  [1];  [2];  [3]
  1. Research Institute for Technical Physics and Materials Science, P.O. Box 49, H-1525 Budapest (Hungary)
  2. (Hungary)
  3. (Germany)
Publication Date:
OSTI Identifier:
20982632
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 2; Other Information: DOI: 10.1063/1.2409609; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; BACKSCATTERING; COMPUTERIZED SIMULATION; CRYSTALLOGRAPHY; ENERGY LOSSES; ENERGY-LOSS SPECTROSCOPY; HELIUM IONS; ION IMPLANTATION; IRRADIATION; KEV RANGE 100-1000; MEV RANGE 01-10; NITROGEN IONS; POINT DEFECTS; RANDOMNESS; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Zolnai, Z., Ster, A., Khanh, N. Q., Battistig, G., Lohner, T., Gyulai, J., Kotai, E., Posselt, M., Research Institute for Particle and Nuclear Physics, P.O. Box 49, H-1525 Budapest, and Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 510119, D-01314 Dresden. Damage accumulation in nitrogen implanted 6H-SiC: Dependence on the direction of ion incidence and on the ion fluence. United States: N. p., 2007. Web. doi:10.1063/1.2409609.
Zolnai, Z., Ster, A., Khanh, N. Q., Battistig, G., Lohner, T., Gyulai, J., Kotai, E., Posselt, M., Research Institute for Particle and Nuclear Physics, P.O. Box 49, H-1525 Budapest, & Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 510119, D-01314 Dresden. Damage accumulation in nitrogen implanted 6H-SiC: Dependence on the direction of ion incidence and on the ion fluence. United States. doi:10.1063/1.2409609.
Zolnai, Z., Ster, A., Khanh, N. Q., Battistig, G., Lohner, T., Gyulai, J., Kotai, E., Posselt, M., Research Institute for Particle and Nuclear Physics, P.O. Box 49, H-1525 Budapest, and Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 510119, D-01314 Dresden. Mon . "Damage accumulation in nitrogen implanted 6H-SiC: Dependence on the direction of ion incidence and on the ion fluence". United States. doi:10.1063/1.2409609.
@article{osti_20982632,
title = {Damage accumulation in nitrogen implanted 6H-SiC: Dependence on the direction of ion incidence and on the ion fluence},
author = {Zolnai, Z. and Ster, A. and Khanh, N. Q. and Battistig, G. and Lohner, T. and Gyulai, J. and Kotai, E. and Posselt, M. and Research Institute for Particle and Nuclear Physics, P.O. Box 49, H-1525 Budapest and Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 510119, D-01314 Dresden},
abstractNote = {The influence of crystallographic orientation and ion fluence on the shape of damage distributions induced by 500 keV N{sup +} implantation at room temperature into 6H-SiC is investigated. The irradiation was performed at different tilt angles between 0 degree sign and 4 degree sign with respect to the <0001> crystallographic axis in order to consider the whole range of beam alignment from channeling to random conditions. The applied implantation fluence range was 2.5x10{sup 14}-3x10{sup 15} cm{sup -2}. A special analytical method, 3.55 MeV {sup 4}He{sup +} ion backscattering analysis in combination with channeling technique (BS/C), was employed to measure the disorder accumulation simultaneously in the Si and C sublattices of SiC with good depth resolution. For correct energy to depth conversion in the BS/C spectra, the average electronic energy loss per analyzing He ion for the <0001> axial channeling direction was determined. It was found that the tilt angle of nitrogen implantation has strong influence on the shape of the induced disorder profiles. Significantly lower disorder was found for channeling than for random irradiation. Computer simulation of the measured BS/C spectra showed the presence of a simple defect structure in weakly damaged samples and suggested the formation of a complex disorder state for higher disorder levels. Full-cascade atomistic computer simulation of the ion implantation process was performed to explain the differences in disorder accumulation on the Si and C sublattices. The damage buildup mechanism was interpreted with the direct-impact, defect-stimulated amorphization model in order to understand damage formation and to describe the composition of structural disorder versus the ion fluence and the implantation tilt angle.},
doi = {10.1063/1.2409609},
journal = {Journal of Applied Physics},
number = 2,
volume = 101,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}